GB1162565A - Improvements in and relating to Semiconductor Structures - Google Patents

Improvements in and relating to Semiconductor Structures

Info

Publication number
GB1162565A
GB1162565A GB05974/67A GB1597467A GB1162565A GB 1162565 A GB1162565 A GB 1162565A GB 05974/67 A GB05974/67 A GB 05974/67A GB 1597467 A GB1597467 A GB 1597467A GB 1162565 A GB1162565 A GB 1162565A
Authority
GB
United Kingdom
Prior art keywords
semi
layers
conductor
devices
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB05974/67A
Other languages
English (en)
Inventor
John Blake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM United Kingdom Ltd
Original Assignee
IBM United Kingdom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM United Kingdom Ltd filed Critical IBM United Kingdom Ltd
Priority to GB05974/67A priority Critical patent/GB1162565A/en
Priority to FR1559209D priority patent/FR1559209A/fr
Priority to CH381568A priority patent/CH468080A/de
Priority to DE19681764106 priority patent/DE1764106A1/de
Priority to NL6804786A priority patent/NL6804786A/xx
Priority to BE713333D priority patent/BE713333A/xx
Priority to SE04645/68A priority patent/SE331720B/xx
Publication of GB1162565A publication Critical patent/GB1162565A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
GB05974/67A 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures Expired GB1162565A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB05974/67A GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures
FR1559209D FR1559209A (cg-RX-API-DMAC7.html) 1967-04-07 1968-02-23
CH381568A CH468080A (de) 1967-04-07 1968-03-13 Halbleitervorrichtung
DE19681764106 DE1764106A1 (de) 1967-04-07 1968-04-03 Halbleitervorrichtung
NL6804786A NL6804786A (cg-RX-API-DMAC7.html) 1967-04-07 1968-04-04
BE713333D BE713333A (cg-RX-API-DMAC7.html) 1967-04-07 1968-04-05
SE04645/68A SE331720B (cg-RX-API-DMAC7.html) 1967-04-07 1968-04-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB05974/67A GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures

Publications (1)

Publication Number Publication Date
GB1162565A true GB1162565A (en) 1969-08-27

Family

ID=10068943

Family Applications (1)

Application Number Title Priority Date Filing Date
GB05974/67A Expired GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures

Country Status (7)

Country Link
BE (1) BE713333A (cg-RX-API-DMAC7.html)
CH (1) CH468080A (cg-RX-API-DMAC7.html)
DE (1) DE1764106A1 (cg-RX-API-DMAC7.html)
FR (1) FR1559209A (cg-RX-API-DMAC7.html)
GB (1) GB1162565A (cg-RX-API-DMAC7.html)
NL (1) NL6804786A (cg-RX-API-DMAC7.html)
SE (1) SE331720B (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
US4351894A (en) 1976-08-27 1982-09-28 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device using silicon carbide mask

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US6143582A (en) 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4351894A (en) 1976-08-27 1982-09-28 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a semiconductor device using silicon carbide mask
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat

Also Published As

Publication number Publication date
BE713333A (cg-RX-API-DMAC7.html) 1968-08-16
CH468080A (de) 1969-01-31
NL6804786A (cg-RX-API-DMAC7.html) 1968-10-08
DE1764106A1 (de) 1971-05-06
FR1559209A (cg-RX-API-DMAC7.html) 1969-03-07
SE331720B (cg-RX-API-DMAC7.html) 1971-01-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee