GB1131462A - Process for preheating shaped bodies in the deposition of semiconductor materials - Google Patents

Process for preheating shaped bodies in the deposition of semiconductor materials

Info

Publication number
GB1131462A
GB1131462A GB104966A GB104966A GB1131462A GB 1131462 A GB1131462 A GB 1131462A GB 104966 A GB104966 A GB 104966A GB 104966 A GB104966 A GB 104966A GB 1131462 A GB1131462 A GB 1131462A
Authority
GB
United Kingdom
Prior art keywords
deposition
heater
semi
conductor material
semiconductor materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB104966A
Inventor
Eduard Enk
Horst Teich
Julius Nickl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB1131462A publication Critical patent/GB1131462A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1,131,462. Deposition of semi-conductor material. WACKER-CHEMIE G.m.b.H. 10 Jan., 1966, No. 1049/66. Heading C1A. [Also in Divisions C7 and H5] In a process for depositing an elemental semiconductor material from a gaseous compound thereof on to a body of the same semi-conductor material heated by direct passage of current, in a metal vessel internally plated with Ti, Ag, Au, or Pt, and having a diameter greater than 150 mm., the body is preheated by an electric heater, fed by a different circuit from that used for direct heating, which is removed from the vessel, or swung away from the body, before deposition is effected. The semi-conductor material may be Si or B. The heater may be a strip heater swung away from the wall to a position 5-10 mm. from 1 or 2 bodies, or a rod heater introduced from above symmetrically between several bodies. It may be enclosed in a jacket of quartz, noble metal, or Al 2 O 3 .
GB104966A 1965-10-27 1966-01-10 Process for preheating shaped bodies in the deposition of semiconductor materials Expired GB1131462A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6513928A NL6513928A (en) 1965-10-27 1965-10-27

Publications (1)

Publication Number Publication Date
GB1131462A true GB1131462A (en) 1968-10-23

Family

ID=19794484

Family Applications (1)

Application Number Title Priority Date Filing Date
GB104966A Expired GB1131462A (en) 1965-10-27 1966-01-10 Process for preheating shaped bodies in the deposition of semiconductor materials

Country Status (2)

Country Link
GB (1) GB1131462A (en)
NL (1) NL6513928A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009120859A1 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Gold-coated polysilicon reactor system and method
US20110318909A1 (en) * 2010-06-29 2011-12-29 Gt Solar Incorporated System and method of semiconductor manufacturing with energy recovery
KR101145014B1 (en) * 2011-09-15 2012-05-11 웅진폴리실리콘주식회사 Cvd reactor formed with ni-mn alloy layer on its inner wall for reflecting radiant heat and protecting diffusion of impurities and method of manufacturing the same
EP2578724A1 (en) 2011-10-07 2013-04-10 Wacker Chemie AG Apparatus and process for deposition of polycrystalline silicon
CN103098173A (en) * 2010-07-19 2013-05-08 瑞科硅公司 Polycrystalline silicon production
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009120859A1 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Gold-coated polysilicon reactor system and method
TWI464292B (en) * 2008-03-26 2014-12-11 Gtat Corp Gold-coated polysilicon reactor system and method
US20110318909A1 (en) * 2010-06-29 2011-12-29 Gt Solar Incorporated System and method of semiconductor manufacturing with energy recovery
CN103098173A (en) * 2010-07-19 2013-05-08 瑞科硅公司 Polycrystalline silicon production
KR101145014B1 (en) * 2011-09-15 2012-05-11 웅진폴리실리콘주식회사 Cvd reactor formed with ni-mn alloy layer on its inner wall for reflecting radiant heat and protecting diffusion of impurities and method of manufacturing the same
EP2578724A1 (en) 2011-10-07 2013-04-10 Wacker Chemie AG Apparatus and process for deposition of polycrystalline silicon
DE102011084137A1 (en) 2011-10-07 2013-04-11 Wacker Chemie Ag Apparatus and method for depositing polycrystalline silicon
US9534290B2 (en) 2011-10-07 2017-01-03 Wacker Chemie Ag Apparatus for deposition of polycrystalline silicon comprising uniformly spaced filament rods and gas inlet orifices, and process for deposition of polycrystalline silicon using same
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance

Also Published As

Publication number Publication date
NL6513928A (en) 1967-04-28

Similar Documents

Publication Publication Date Title
GB1131462A (en) Process for preheating shaped bodies in the deposition of semiconductor materials
GB1229879A (en)
GB1147412A (en) Process of producing oxide films on substrates
GB1130281A (en) Apparatus for the hot-forming of metal
IL32818A0 (en) Process for the deposition of refractory metal and metalloid carbides on a base material
ES332844A1 (en) Procedure for the production of photochemically stable titanium dioxide pigment. (Machine-translation by Google Translate, not legally binding)
GB1014158A (en) Thermalstable resins and products produced therewith
GB1180074A (en) Improvements in or relating to Metal Melting Apparatus.
GB1204893A (en) Improvements relating to coating by hot dipping
CH504915A (en) Manufacturing process of single or mixed refractory metal carbides, in fine powder form
GB1189344A (en) Process and Apparatus for Depositing Refractory Metals
GB1286720A (en) Improvements in or relating to the manufacture of ductile high strength electrical conductor stock
GB1173703A (en) Constant Conductivity Alloys.
GB1075655A (en) Process for applying a refractory coating and articles comprising such a coating
FR93459E (en) Process and apparatus for the oxidation of metal halides in the gas phase and resulting products.
AT263834B (en) Process for the production of metals and metal alloys, especially iron, in melting furnaces with neutralized slag feed
CHINENOV et al. Mechanical properties of alloys of the system Ti-Al-Mo subjected to heat treatment(Ti-based alloys with Al and Mo investigated for chemical composition and heat treatment effects on mechanical properties)
ES372887A1 (en) Procedure and apparatus for the finishing of the casting of metal fused on a ferreo cylindrical body. (Machine-translation by Google Translate, not legally binding)
GB1116788A (en) Materials for an electric contact
GB1237607A (en) Improvements in or relating to the metallisation of travelling non-metallic material
FR1466344A (en) Process for the production of substantially homogeneous alloys containing significant amounts of molybdenum, and articles thus obtained
ES186351U (en) Heating device. (Machine-translation by Google Translate, not legally binding)
ES284318A1 (en) Procedure and apparatus applicable to thermal treatment for metal wires and wire coating (Machine-translation by Google Translate, not legally binding)
AU5924869A (en) Process forthe deposition of refractory metal and metalloid carbides ona base material
GB772067A (en) Improvements in the manufacture of tungsten powder and articles made therefrom