GB1116250A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1116250A GB1116250A GB5410566A GB5410566A GB1116250A GB 1116250 A GB1116250 A GB 1116250A GB 5410566 A GB5410566 A GB 5410566A GB 5410566 A GB5410566 A GB 5410566A GB 1116250 A GB1116250 A GB 1116250A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- voltage
- layer
- ohm
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/24—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
- H03J5/242—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection
- H03J5/244—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection using electronic means
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1,116,250. Variable capacitance diodes. ITT INDUSTRIES, Inc. 2 Dec., 1966 [3 Dec., 1965], No. 54105/66. Heading H1K. A variable capacitance diode has a zone configuration PNP or NPN with contacts on the outer zones. The relationship between the junction areas and the zone dopings are so selected that for a given range of applied voltage the rate of change of capacitance with voltage differs in accordance with the polarity of the voltage. In the device illustrated in Fig. 1 zone 1 has a resistivity of 0À01 ohm. cm. and a thickness greater than the minority carrier diffusion length while layers 2 and 3, each 7 u thick, have a resistivity of 1 ohm. cm. Graded layer 9 is formed by diffusion while layer 2 is masked. After etching away the central portion of the masking layer 4 acceptor material is diffused in to form layers 7 and 10.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEJ0029509 | 1965-12-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1116250A true GB1116250A (en) | 1968-06-06 |
Family
ID=7203622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5410566A Expired GB1116250A (en) | 1965-12-03 | 1966-12-02 | Semiconductor devices |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1514070C3 (en) |
FR (1) | FR1508404A (en) |
GB (1) | GB1116250A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2199198B1 (en) * | 1972-09-08 | 1977-12-30 | Korovin Stanisl V | |
DE3005301C2 (en) * | 1980-02-13 | 1985-11-21 | Telefunken electronic GmbH, 7100 Heilbronn | Varactor or mixer diode |
GB2104725B (en) * | 1981-07-17 | 1986-04-09 | Clarion Co Ltd | Variable capacitance device |
-
1965
- 1965-12-03 DE DE19651514070 patent/DE1514070C3/en not_active Expired
-
1966
- 1966-12-02 GB GB5410566A patent/GB1116250A/en not_active Expired
- 1966-12-02 FR FR85933A patent/FR1508404A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1514070C3 (en) | 1975-06-19 |
DE1514070A1 (en) | 1969-08-21 |
DE1514070B2 (en) | 1972-05-10 |
FR1508404A (en) | 1968-01-05 |
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