GB1468572A - Junction-type avalanche diode - Google Patents

Junction-type avalanche diode

Info

Publication number
GB1468572A
GB1468572A GB1578074A GB1578074A GB1468572A GB 1468572 A GB1468572 A GB 1468572A GB 1578074 A GB1578074 A GB 1578074A GB 1578074 A GB1578074 A GB 1578074A GB 1468572 A GB1468572 A GB 1468572A
Authority
GB
United Kingdom
Prior art keywords
layer
highly doped
junction
doped material
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1578074A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1468572A publication Critical patent/GB1468572A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

1468572 Semi-conductor devices THOMSON-CSF 9 April 1974 [13 April 1973] 15780/74 Heading H1K A junction-type avalanche diode stated to exhibit lower noise characteristics than prior art diodes at microwave frequencies comprises a highly doped substrate 11 of a first conductivity type, a first layer 12 of less highly doped material of the first type, a second layer 13 of highly doped material of a conductivity type opposite the first with a third layer 14 of intrinsic or weakly doped material interposed between the first and second layers. The thickness of the third layer 14 is preferably a quarter of that of the first layer 12, and has a resistivity greater than 50 ohm-cm. The layers are epitaxially grown on a silicon substrate and the electric field gradients therethrough are as shown in Fig. 5.
GB1578074A 1973-04-13 1974-04-09 Junction-type avalanche diode Expired GB1468572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7313505A FR2225842B1 (en) 1973-04-13 1973-04-13

Publications (1)

Publication Number Publication Date
GB1468572A true GB1468572A (en) 1977-03-30

Family

ID=9117952

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1578074A Expired GB1468572A (en) 1973-04-13 1974-04-09 Junction-type avalanche diode

Country Status (4)

Country Link
JP (1) JPS503586A (en)
DE (1) DE2417933A1 (en)
FR (1) FR2225842B1 (en)
GB (1) GB1468572A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109637930A (en) * 2018-11-21 2019-04-16 温州大学 Light-operated IMPATT diode of GaN/Si hetero-junctions lateral type and preparation method thereof

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5225673U (en) * 1975-08-13 1977-02-23
JPS53148001U (en) * 1977-04-25 1978-11-21
FR2399740A1 (en) * 1977-08-02 1979-03-02 Thomson Csf HETERO-JUNCTION AVALANCHE DIODE, AND OSCILLATOR IN "TRANSIT TIME" MODE USING SUCH A DIODE
JPS552435U (en) * 1978-06-23 1980-01-09
JPS58195689U (en) * 1982-06-24 1983-12-26 ジェイエスアール株式会社 Improved cleaning head
DE3725214A1 (en) * 1986-09-27 1988-03-31 Licentia Gmbh IMPATT DIODE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109637930A (en) * 2018-11-21 2019-04-16 温州大学 Light-operated IMPATT diode of GaN/Si hetero-junctions lateral type and preparation method thereof

Also Published As

Publication number Publication date
FR2225842A1 (en) 1974-11-08
DE2417933A1 (en) 1974-10-24
FR2225842B1 (en) 1977-09-02
JPS503586A (en) 1975-01-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee