GB1108870A - Semiconductor diode with improved high voltage characteristic and method of production thereof - Google Patents

Semiconductor diode with improved high voltage characteristic and method of production thereof

Info

Publication number
GB1108870A
GB1108870A GB2050/67A GB205067A GB1108870A GB 1108870 A GB1108870 A GB 1108870A GB 2050/67 A GB2050/67 A GB 2050/67A GB 205067 A GB205067 A GB 205067A GB 1108870 A GB1108870 A GB 1108870A
Authority
GB
United Kingdom
Prior art keywords
high resistivity
type
lithium
drifting
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2050/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Atomic Energy Commission (AEC)
Original Assignee
US Atomic Energy Commission (AEC)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Atomic Energy Commission (AEC) filed Critical US Atomic Energy Commission (AEC)
Publication of GB1108870A publication Critical patent/GB1108870A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
GB2050/67A 1966-03-08 1967-01-13 Semiconductor diode with improved high voltage characteristic and method of production thereof Expired GB1108870A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US534974A US3413529A (en) 1966-03-08 1966-03-08 A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions

Publications (1)

Publication Number Publication Date
GB1108870A true GB1108870A (en) 1968-04-03

Family

ID=24132300

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2050/67A Expired GB1108870A (en) 1966-03-08 1967-01-13 Semiconductor diode with improved high voltage characteristic and method of production thereof

Country Status (4)

Country Link
US (1) US3413529A (cg-RX-API-DMAC10.html)
BE (1) BE694394A (cg-RX-API-DMAC10.html)
FR (1) FR1512208A (cg-RX-API-DMAC10.html)
GB (1) GB1108870A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501678A (en) * 1967-06-28 1970-03-17 Ortec Tapered-shelf semiconductor
FR2094616A5 (cg-RX-API-DMAC10.html) * 1970-06-26 1972-02-04 Commissariat Energie Atomique
DE10128654B4 (de) * 2001-06-15 2008-04-10 Forschungszentrum Jülich GmbH Beidseitig mikrostrukturierter, ortsempfindlicher Detektor
DE10153241B4 (de) * 2001-10-31 2008-04-03 Forschungszentrum Jülich GmbH Transmissionsdetektor nebst Herstellungsverfahren
WO2007138745A1 (ja) * 2006-05-31 2007-12-06 Shimadzu Corporation 半導体ｘ線検出素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3116183A (en) * 1958-05-15 1963-12-31 Gen Electric Asymmetrically conductive device
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions

Also Published As

Publication number Publication date
US3413529A (en) 1968-11-26
BE694394A (cg-RX-API-DMAC10.html) 1967-07-31
FR1512208A (fr) 1968-02-02

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