GB1102816A - Improvements in or relating to laser devices - Google Patents

Improvements in or relating to laser devices

Info

Publication number
GB1102816A
GB1102816A GB2409464A GB2409464A GB1102816A GB 1102816 A GB1102816 A GB 1102816A GB 2409464 A GB2409464 A GB 2409464A GB 2409464 A GB2409464 A GB 2409464A GB 1102816 A GB1102816 A GB 1102816A
Authority
GB
United Kingdom
Prior art keywords
relating
laser devices
june
semiconductor
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2409464A
Inventor
Derek Harry Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductors Ltd
Original Assignee
Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductors Ltd filed Critical Semiconductors Ltd
Priority to GB2409464A priority Critical patent/GB1102816A/en
Publication of GB1102816A publication Critical patent/GB1102816A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating

Abstract

1,102,816. Lasers. SEMICONDUCTORS Ltd. 3 June, 1965 [10 June, 1964], No. 24094/64. Heading H1C. A semiconductor, e.g. gallium arsenide, injection laser 1 has a negative feedback loop formed by a system of mirrors 2, 3, 4, the loop reflecting back part of the optical output into the semiconductor in a direction different to that of the preferred oscillation mode.
GB2409464A 1964-06-10 1964-06-10 Improvements in or relating to laser devices Expired GB1102816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2409464A GB1102816A (en) 1964-06-10 1964-06-10 Improvements in or relating to laser devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2409464A GB1102816A (en) 1964-06-10 1964-06-10 Improvements in or relating to laser devices

Publications (1)

Publication Number Publication Date
GB1102816A true GB1102816A (en) 1968-02-14

Family

ID=10206288

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2409464A Expired GB1102816A (en) 1964-06-10 1964-06-10 Improvements in or relating to laser devices

Country Status (1)

Country Link
GB (1) GB1102816A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046794A1 (en) * 1969-06-16 1971-03-12 Western Electric Co
FR2046793A1 (en) * 1969-06-16 1971-03-12 Western Electric Co

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046794A1 (en) * 1969-06-16 1971-03-12 Western Electric Co
FR2046793A1 (en) * 1969-06-16 1971-03-12 Western Electric Co

Similar Documents

Publication Publication Date Title
GB1034160A (en) Angle adjusting mechanism for optical elements
SE325311B (en)
NL280012A (en)
Basov et al. A semiconductor quantum generator with two- photon optical excitation(Semiconductor GaAs quantum generator with two- photon absorption of neodymium laser emission)
GB1079813A (en) Coupled lasers
GB1102816A (en) Improvements in or relating to laser devices
GB1517537A (en) Lasers and photo-detectors
GB1464970A (en) Pulse-modulated semi-conductor lasers
GB1046702A (en) Improvements in or relating to lasers
GB1128162A (en) Improvements in or relating to lasers
GB1095446A (en)
GB1002384A (en) Improvements in light amplifiers
GB1010241A (en) Optical maser device
GB1166922A (en) Method and device for producing high-power light pulses of short duration
GB1383550A (en) Optical communications systems
MARIA Control of ruby laser output of a quantum oscillator, utilizing the effects of light diffraction by ultrasonic waves
ALLAKHVERDIAN et al. Effect of the waveguide properties of a p-n junction on the output of gallium arsenide laser diodes(Waveguide optical properties effect on injection GaAs laser threshold lasing and field distribution in near/far zones for various parameters of active region)
GB1055840A (en) Laser
NIKITIN et al. Theory of optically coupled lasers using a GaAs p-n junction(Optical coupling using gallium arsenide laser for variation of frequency of diode emission through small change in current density)
MAKOVETSKAIA et al. Width of the forbidden zone of indium phosphide and gallium arsenide solid solutions determined from the edge of the principal band of optical absorption(Forbidden zone width of indium phosphide-gallium arsenide solid solutions, based on optical density vs wavelength curves)
NIKITIN et al. Concerning the theory of optically coupled GaAs p-n junction lasers(Optical coupling using gallium arsenide laser for variation of frequency of diode emission through small change in current density)
ARNOLD et al. Spectral distribution of the stimulated output of a cylindrical gallium arsenide laser diode
Basov et al. GaAs semiconductor laser optically excited by radiation having energy close to the forbidden band width(Gallium arsenide laser pumped by Stokes component of induced Raman scattering in liquid nitrogen of Q-modulated ruby laser light)
BONAMY et al. Influence of the configuration utilized on the threshold of an optical-pumping laser(Fraction of luminous energy captured by optical pumping lasers in given geometrical configuration, obtaining functioning threshold depending only on crystal)
HSIA et al. The formation time of optical oscillation of laser(Formation time of optical laser oscillations)