GB1092224A - Semiconductor circuit arrangements - Google Patents

Semiconductor circuit arrangements

Info

Publication number
GB1092224A
GB1092224A GB47660/65A GB4766065A GB1092224A GB 1092224 A GB1092224 A GB 1092224A GB 47660/65 A GB47660/65 A GB 47660/65A GB 4766065 A GB4766065 A GB 4766065A GB 1092224 A GB1092224 A GB 1092224A
Authority
GB
United Kingdom
Prior art keywords
electrodes
drift
input
semi
velocity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47660/65A
Inventor
Carl Peter Sandbank
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB47660/65A priority Critical patent/GB1092224A/en
Priority to NL6615852A priority patent/NL6615852A/xx
Publication of GB1092224A publication Critical patent/GB1092224A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks
    • H03H9/36—Time-delay networks with non-adjustable delay time
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/326—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator the resonator being an acoustic wave device, e.g. SAW or BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F13/00—Amplifiers using amplifying element consisting of two mechanically- or acoustically-coupled transducers, e.g. telephone-microphone amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Acoustics & Sound (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)

Abstract

1092224 Semi-conductor devices STANDARD TELEPHONES & CABLES Ltd 4 Nov 1966 [10 Nov1965] 47660/65 Headings H3U UN UB U30 U22 U31 U28 U29Y and U29B A semi-conductor circuit arrangement comprises a Piezo-electric semi-conductor material on an insulating substrate with a pair of ohmic electrodes at each end, each pair forming electroacoustic transducing elements and having an applied voltage to cause the mobile carriers to drift between the input and output electrode pairs at about the velocity of sound. In the embodiment a cadmium sulphide layer 3, 1000 to 20,000 Š thick, is deposited on a quartz substrate 1 with deposited input electrodes 2a, 4a and output electrodes 2b, 4b of indium. The layer may be made more conductive by introduction of donors or by illuminating. If the carriers, by adjustment of the drift voltage source are made to travel slightly faster than the sound waves resulting from electrical input to electrodes 2a, 4a, the device provides an amplified output at electrodes 2b, 4b. In the drift velocity is made to equal the sound velocity the arrangement constitutes a delay line. In normal operation the applied voltages are pulsed and by lengthening the duration of the applied drift voltage with no input signal, the circuit is said to function as an oscillator.
GB47660/65A 1965-11-10 1965-11-10 Semiconductor circuit arrangements Expired GB1092224A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB47660/65A GB1092224A (en) 1965-11-10 1965-11-10 Semiconductor circuit arrangements
NL6615852A NL6615852A (en) 1965-11-10 1966-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB47660/65A GB1092224A (en) 1965-11-10 1965-11-10 Semiconductor circuit arrangements

Publications (1)

Publication Number Publication Date
GB1092224A true GB1092224A (en) 1967-11-22

Family

ID=10445813

Family Applications (1)

Application Number Title Priority Date Filing Date
GB47660/65A Expired GB1092224A (en) 1965-11-10 1965-11-10 Semiconductor circuit arrangements

Country Status (2)

Country Link
GB (1) GB1092224A (en)
NL (1) NL6615852A (en)

Also Published As

Publication number Publication date
NL6615852A (en) 1967-05-11

Similar Documents

Publication Publication Date Title
US2476323A (en) Multielectrode modulator
SE8504350D0 (en) wave device
ES309288A3 (en) A solid state electrical device. (Machine-translation by Google Translate, not legally binding)
US3287506A (en) Semiconductor-based electro-acoustic transducer
JPS56125868A (en) Thin-film semiconductor device
US3264493A (en) Semiconductor circuit module for a high-gain, high-input impedance amplifier
JPS56162875A (en) Semiconductor device
GB1181459A (en) Improvements in Semiconductor Structures
US3452222A (en) Circuits employing semiconductive devices characterized by traveling electric field domains
GB1092224A (en) Semiconductor circuit arrangements
GB1149589A (en) Thin film active element
US3816769A (en) Method and circuit element for the selective charging of a semiconductor diffusion region
US3634702A (en) Solid-state delay line
GB1073347A (en) Improvements in or relating to elasto-resistive elements
GB1234363A (en)
GB1039915A (en) Improvements in or relating to semiconductor devices
FR2372545A1 (en) FIELD-EFFECT TRANSISTOR AMPLIFIER
GB1273756A (en) Improvements in or relating to pulse converters
US3602734A (en) Semiconductor device employing gunn effect elements
GB1088793A (en) Electromechanical transducer
JPS52144284A (en) Semiconductor device
FR2316800A1 (en) FET switching circuit integrated in chip - generates biasing voltage by charge injection into substrate
US3593046A (en) Communication system including a plurality of semiconductive circuit arrangements using gunn effect devices
SE315952B (en)
GB1292125A (en) Oscillators utilising bulk effect semiconductor devices