GB1091181A - Improvements in or relating to arrangements for tuning resonant lines - Google Patents

Improvements in or relating to arrangements for tuning resonant lines

Info

Publication number
GB1091181A
GB1091181A GB149765A GB149765A GB1091181A GB 1091181 A GB1091181 A GB 1091181A GB 149765 A GB149765 A GB 149765A GB 149765 A GB149765 A GB 149765A GB 1091181 A GB1091181 A GB 1091181A
Authority
GB
United Kingdom
Prior art keywords
resonant lines
line
arrangements
relating
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB149765A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1091181A publication Critical patent/GB1091181A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes

Landscapes

  • Amplifiers (AREA)

Abstract

1,091,181. Ganged tuning. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. Jan. 13, 1965 [Jan. 31, 1964], No. 1497/65. Headings H3Q and H3T. To facilitate ganging of circuits using resonant lines shunted by variable reactances, the point of attachment of the latter to the line is made adjustable to compensate for tolerances in the reactance valve. In Fig. 2 a transistor amplifier is tuned by varying (at 15) the bias on variablecapacitance diodes D1, D2 which are tapped in to the resonant lines 6, 8. Each diode is mounted on a collar which can be moved along the line until the effective capacitance presented to each line is the same for a given bias value.
GB149765A 1964-01-31 1965-01-13 Improvements in or relating to arrangements for tuning resonant lines Expired GB1091181A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0025524 1964-01-31

Publications (1)

Publication Number Publication Date
GB1091181A true GB1091181A (en) 1967-11-15

Family

ID=7552135

Family Applications (1)

Application Number Title Priority Date Filing Date
GB149765A Expired GB1091181A (en) 1964-01-31 1965-01-13 Improvements in or relating to arrangements for tuning resonant lines

Country Status (1)

Country Link
GB (1) GB1091181A (en)

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