GB1085955A - Improvements in or relating to magnetic core storage matrices - Google Patents

Improvements in or relating to magnetic core storage matrices

Info

Publication number
GB1085955A
GB1085955A GB29879/63A GB2987963A GB1085955A GB 1085955 A GB1085955 A GB 1085955A GB 29879/63 A GB29879/63 A GB 29879/63A GB 2987963 A GB2987963 A GB 2987963A GB 1085955 A GB1085955 A GB 1085955A
Authority
GB
United Kingdom
Prior art keywords
transistor
current
selector
transistors
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29879/63A
Inventor
John Ashwell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Automatic Telephone and Electric Co Ltd
Original Assignee
Automatic Telephone and Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Automatic Telephone and Electric Co Ltd filed Critical Automatic Telephone and Electric Co Ltd
Priority to GB29879/63A priority Critical patent/GB1085955A/en
Priority to US379622A priority patent/US3343147A/en
Priority to NL6408319A priority patent/NL6408319A/xx
Priority to FR982596A priority patent/FR1420400A/en
Priority to DE19641449705 priority patent/DE1449705C/en
Publication of GB1085955A publication Critical patent/GB1085955A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06007Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6221Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)

Abstract

1,085,955. Magnetic storage matrices; transistor current switching circuits. AUTOMATIC TELEPHONE & ELECTRIC CO. Ltd. June 16, 1964 [July 27, 1963], No. 29879/63. Headings H3B and H3T. Current to a row or column drive winding of a coincident current matrix, in which each winding is connected between a primary and a secondary transistor selector, is obtained from a transistor connected to the primary selector which current is diverted from a path to a first source of potential to a path through the winding when a third transistor selector connected between a second source of potential and the secondary selector is energized subsequent to the energization of the primary and secondary selectors. In the 64 x 64 matrix of Fig. 1 the core lines are divided into groups of eight and the method of selecting a core line is such that the primary selectors RYP1, WYP1, RXP1, WXP1 &c. are each connected to all the core lines of a particular group while the secondary selectors WYS1, RYS1, WXS1, RXS2 &c. are each connected to corresponding core lines in all the groups. The references in brackets attached to various leads indicate the core lines to which such leads are connected. The primary and secondary selector stages are connected to current defining circuits TXD and to current defining circuits TS as shown in Fig. 2. When no magnetic core lines are being selected all the current defining transistors TXD conduct while all the other selector transistors are cut off. In order to select the core line CL for writing purposes stages WYP1 and WYS1 are actuated but the current through transistors TXP and TXS of these stages do not conduct sufficiently to switch the cores. Subsequent to and during the activation of the primary and secondary selector stages transistor TXT is rendered conductive by application thereto of a pulse from transistor TXA over transformer T1 so that transistors TXS, TXP pass the total collector current of transistor TXD, i.e. halfcurrent pulse required for coincident current core selection. Saturation of the transistors is prevented by diode D4. At the end of the pulse from the secondary winding of T1 transistor TXT is cut off and diode D1 and voltage source V1 again provides collector current for transistor TXD which transistor is protected against back e.m.f.'s by diode D2. After transistor TXT is cut off the transistors TXS and TXP are rendered non-conducting.
GB29879/63A 1963-07-27 1963-07-27 Improvements in or relating to magnetic core storage matrices Expired GB1085955A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB29879/63A GB1085955A (en) 1963-07-27 1963-07-27 Improvements in or relating to magnetic core storage matrices
US379622A US3343147A (en) 1963-07-27 1964-07-01 Magnetic core switching and selecting circuits
NL6408319A NL6408319A (en) 1963-07-27 1964-07-21
FR982596A FR1420400A (en) 1963-07-27 1964-07-22 Improvements to transistor switching and selection circuits
DE19641449705 DE1449705C (en) 1963-07-27 1964-07-25 Magnetic core memory matrix working according to the coincidence current principle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB29879/63A GB1085955A (en) 1963-07-27 1963-07-27 Improvements in or relating to magnetic core storage matrices

Publications (1)

Publication Number Publication Date
GB1085955A true GB1085955A (en) 1967-10-04

Family

ID=10298677

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29879/63A Expired GB1085955A (en) 1963-07-27 1963-07-27 Improvements in or relating to magnetic core storage matrices

Country Status (4)

Country Link
US (1) US3343147A (en)
FR (1) FR1420400A (en)
GB (1) GB1085955A (en)
NL (1) NL6408319A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440624A (en) * 1964-10-26 1969-04-22 Automatic Telephone & Elect Magnetic core matrix data storage devices
US3432835A (en) * 1965-04-30 1969-03-11 Ibm Current summing arrangement for a magnetic core memory
US3451048A (en) * 1965-10-05 1969-06-17 Ibm Drive system for a magnetic core array
US3445831A (en) * 1965-10-05 1969-05-20 Ibm Drive system for a magnetic core array
US3487383A (en) * 1966-02-14 1969-12-30 Burroughs Corp Coincident current destructive read-out magnetic memory system
US3568152A (en) * 1967-11-08 1971-03-02 Control Data Corp Method and apparatus for preconditioning a memory system
US3707705A (en) * 1967-12-20 1972-12-26 Jones V Howell Jr Memory module
US3582911A (en) * 1968-12-04 1971-06-01 Ferroxcube Corp Core memory selection matrix
US3930171A (en) * 1974-07-15 1975-12-30 Ampex Low power, fast rise time current driver for inductive load

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054905A (en) * 1960-11-21 1962-09-18 Ampex Load-driving circuit

Also Published As

Publication number Publication date
DE1449705A1 (en) 1968-12-19
NL6408319A (en) 1964-10-26
US3343147A (en) 1967-09-19
FR1420400A (en) 1965-12-10
DE1449705B2 (en) 1972-12-28

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