GB978306A - Load driving circuit - Google Patents

Load driving circuit

Info

Publication number
GB978306A
GB978306A GB26209/62A GB2620962A GB978306A GB 978306 A GB978306 A GB 978306A GB 26209/62 A GB26209/62 A GB 26209/62A GB 2620962 A GB2620962 A GB 2620962A GB 978306 A GB978306 A GB 978306A
Authority
GB
United Kingdom
Prior art keywords
current
transistor
transistors
winding
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26209/62A
Inventor
Don Nguey Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ampex Corp
Original Assignee
Ampex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US70760A priority Critical patent/US3054905A/en
Application filed by Ampex Corp filed Critical Ampex Corp
Priority to GB26209/62A priority patent/GB978306A/en
Priority to DEA40858A priority patent/DE1299035B/en
Priority to CH922162A priority patent/CH436392A/en
Publication of GB978306A publication Critical patent/GB978306A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06007—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
    • G11C11/06014—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit using one such element per bit
    • G11C11/06021—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit using one such element per bit with destructive read-out
    • G11C11/06028—Matrixes
    • G11C11/06042—"word"-organised, e.g. 2D organisation or linear selection, i.e. full current selection through all the bit-cores of a word during reading

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Digital Magnetic Recording (AREA)

Abstract

978,306. Circuits employing bi-stable magnetic elements; transistor switching circuits. AMPEX CORPORATION. July 9, 1962, No. 26209/62. Headings H3B and H3T. A circuit for driving a winding 20W connected in series with a diode 20WD and coupled with a plurality of magnetic cores 10A to 16A transmits a small priming current followed by a larger current sufficient to perform the switching operation. Coincident pulses from an input pulse source 46 and from a gate 38 operate a transistor switch 24 and a write switch comprising transistors 70, 68 to complete a circuit through the winding 20W from the terminal A of a current stabilizing circuit 48. A dummy load comprising transistors 106, 108, 110 in the current stabilizing circuit (Fig. 3) normally conducts and robs the winding 20W of current from source 100 leaving current in the winding insufficient to drive the cores. When the transistors of the dummy load are blocked by a drive pulse from source 50, which follows the coincident pulses after a delay of less than a microsecond, the whole of the current from source 100 is diverted through winding 20W to drive the cores. Current stabilizer circuit, Fig. 3.-Transistors 106, 108, 110, 134, 136 normally conduct and transistor 122 is normally non-conducting. A drive current pulse from source 50 cuts off transistor 134 and condenser 140 charges through transistor 136. The voltage on the condenser rises linearly with time to make transistor 122 conduct and to cut off transistors 106, 108, 110. At the end of the pulse, the base of transistor 122 will return linearly to its original potential. The rise and fall of the drive current are controlled by potentiometers 146, 158 and the magnitude of the priming current is controlled by potentiometer 118.
GB26209/62A 1960-11-21 1962-07-09 Load driving circuit Expired GB978306A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US70760A US3054905A (en) 1960-11-21 1960-11-21 Load-driving circuit
GB26209/62A GB978306A (en) 1960-11-21 1962-07-09 Load driving circuit
DEA40858A DE1299035B (en) 1960-11-21 1962-08-01 Circuit for writing into a matrix memory or for reading from a matrix memory
CH922162A CH436392A (en) 1960-11-21 1962-08-02 Circuit for operating a load

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70760A US3054905A (en) 1960-11-21 1960-11-21 Load-driving circuit
GB26209/62A GB978306A (en) 1960-11-21 1962-07-09 Load driving circuit
DEA40858A DE1299035B (en) 1960-11-21 1962-08-01 Circuit for writing into a matrix memory or for reading from a matrix memory
CH922162A CH436392A (en) 1960-11-21 1962-08-02 Circuit for operating a load

Publications (1)

Publication Number Publication Date
GB978306A true GB978306A (en) 1964-12-23

Family

ID=27429202

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26209/62A Expired GB978306A (en) 1960-11-21 1962-07-09 Load driving circuit

Country Status (4)

Country Link
US (1) US3054905A (en)
CH (1) CH436392A (en)
DE (1) DE1299035B (en)
GB (1) GB978306A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129139C (en) * 1962-11-01
US3323114A (en) * 1963-06-21 1967-05-30 Bell Telephone Labor Inc Nondestructively interrogated magnetic memory
GB1085955A (en) * 1963-07-27 1967-10-04 Automatic Telephone & Elect Improvements in or relating to magnetic core storage matrices
US3395404A (en) * 1964-02-05 1968-07-30 Burroughs Corp Address selection system for memory devices
US3473149A (en) * 1966-05-02 1969-10-14 Sylvania Electric Prod Memory drive circuitry
US3671949A (en) * 1970-04-27 1972-06-20 Gen Motors Corp Method and apparatus for driving memory core selection lines
CN102758786B (en) * 2011-04-28 2016-03-30 赛恩倍吉科技顾问（深圳）有限公司 Fan circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2922988A (en) * 1954-12-30 1960-01-26 Bell Telephone Labor Inc Magnetic core memory circuits
FR1137717A (en) * 1955-10-25 1957-06-03 Ibm France Control device for matrix with magnetic cores
FR1172046A (en) * 1955-11-03 1959-02-04 Ibm Magnetic Core Matrix Selection System
US2993198A (en) * 1958-11-28 1961-07-18 Burroughs Corp Bidirectional current drive circuit

Also Published As

Publication number Publication date
US3054905A (en) 1962-09-18
DE1299035B (en) 1969-07-10
CH436392A (en) 1967-05-31

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