GB1051808A - - Google Patents

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Publication number
GB1051808A
GB1051808A GB1051808DA GB1051808A GB 1051808 A GB1051808 A GB 1051808A GB 1051808D A GB1051808D A GB 1051808DA GB 1051808 A GB1051808 A GB 1051808A
Authority
GB
United Kingdom
Prior art keywords
plate
semi
plates
silicon
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of GB1051808A publication Critical patent/GB1051808A/en
Active legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1,051,808. Silicon; germanium. SIEMENS & HALSKE A.G. June 9, 1964 [June 10, 1963], No. 23752/04. Heading C1A. [Also in Divisions C7 and H1] Monocrystalline. high-ohmic, p-conductive layers of a semi-conductor material, e.g. silicon, germanium are prepared by transferring P- doped semi-conductor material by means of a reaction gas by a transport reaction from the surface of the first heated plate of P-doped semi-conductor material on to the adjacent surface of a monocrystalline carrier plate of the semi-conductor arranged parallel to and spaced from said first plate to provide a reaction zone between the two plates through which the transport reaction takes place, the two plates being spaced apart by spacers of said semiconductor material, in which transport reaction semi-conductor material at the surface of the plate is converted by the reaction gas into a gaseous compound, which compound decomposes at the cooler adjacent surface of the carrier plate to deposit semi-conductor material, and the distance between said plates being such that only material from the first plate is transferred to the carrier plate and entry of impurities from the free gas space outside the reaction zone is prevented by convection currents inside the reaction zone. A monocrystalline plate 3 of high-ohmic, P-conductive silicon, preferably doped with boron, is arranged on a heated base 1 of inert material provided with a coating 2 of the semi-conductor material. A monocrystalline carrier plate 4 of the same or different conductivity, P- or N-conductive, is arranged with a distance of say 200 microns between adjacent surfaces of the plates. The plates are held apart by spacers 5 formed by fragments of high ohmic silicon plate and resting on plate 3 at three points. Plates 3 and 4 can be etched in 40% hydrofluoric acid, afterwards chemically polished, and annealed for 30 minutes at 1250‹ C. in flowing hydrogen. The heated plate 3 may be at 1150‹ C. A mixture of a gaseous silicon compound, in particular SiCl 4 , and hydrogen is used as a reaction gas with a composition say 0À01: 1 mole ratio SiCl 4 to H 2 . The layers are suitable for the manufacture of semi-conductor components, e.g. high frequency and switching transistors, microwave rectifiers.
GB1051808D 1963-06-10 Active GB1051808A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0085604 1963-06-10

Publications (1)

Publication Number Publication Date
GB1051808A true GB1051808A (en)

Family

ID=7512461

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1051808D Active GB1051808A (en) 1963-06-10

Country Status (5)

Country Link
CH (1) CH416578A (en)
DE (1) DE1444537A1 (en)
FR (1) FR1398314A (en)
GB (1) GB1051808A (en)
NL (1) NL6406330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2195663A (en) * 1986-08-15 1988-04-13 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2195663A (en) * 1986-08-15 1988-04-13 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor

Also Published As

Publication number Publication date
NL6406330A (en) 1964-12-11
FR1398314A (en) 1965-05-07
DE1444537A1 (en) 1970-02-19
CH416578A (en) 1966-07-15

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