GB1051271A - - Google Patents

Info

Publication number
GB1051271A
GB1051271A GB1051271DA GB1051271A GB 1051271 A GB1051271 A GB 1051271A GB 1051271D A GB1051271D A GB 1051271DA GB 1051271 A GB1051271 A GB 1051271A
Authority
GB
United Kingdom
Prior art keywords
field effect
zener diode
march
semi
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of GB1051271A publication Critical patent/GB1051271A/en
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09407—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of the same canal type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C17/00—Compasses; Devices for ascertaining true or magnetic north for navigation or surveying purposes
    • G01C17/02—Magnetic compasses
    • G01C17/04—Magnetic compasses with north-seeking magnetic elements, e.g. needles
    • G01C17/10—Comparing observed direction with north indication
    • G01C17/12—Comparing observed direction with north indication by sighting means, e.g. for surveyors' compasses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Logic Circuits (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
  • Amplifiers (AREA)
GB1051271D 1963-03-22 Active GB1051271A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR928887A FR1359902A (fr) 1963-03-22 1963-03-22 Circuit intégré de transposition d'une variation de tension électrique

Publications (1)

Publication Number Publication Date
GB1051271A true GB1051271A (xx)

Family

ID=8799838

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1051271D Active GB1051271A (xx) 1963-03-22

Country Status (4)

Country Link
DE (1) DE121592C (xx)
FR (1) FR1359902A (xx)
GB (1) GB1051271A (xx)
NL (1) NL6402995A (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
FR2230125A1 (en) * 1973-05-16 1974-12-13 Thomson Csf Intergrated FET voltage converter with FET in series with resistor - to give constant difference between input and output voltages

Also Published As

Publication number Publication date
FR1359902A (fr) 1964-04-30
DE121592C (xx)
NL6402995A (xx) 1964-09-23

Similar Documents

Publication Publication Date Title
GB1163788A (en) Driver-Sense Circuit Arrangements in Memory Systems
GB1043621A (en) Electrical control circuits embodying semiconductor devices
GB1127579A (en) Rectifying circuits
GB1094089A (en) Current limiter circuit
GB1190781A (en) Semiconductor Voltage Limiting Devices
GB1473469A (en) Voltage level changing circuits
US3845324A (en) Dual voltage fet inverter circuit with two level biasing
GB982941A (en) Improvements in transistor amplifiers
GB1060242A (en) Signal translating circuits
GB1466771A (en) Comparator-keyed oscillator
GB1075085A (en) Improvements in or relating to semiconductor devices
GB948011A (en) An integrated circuit semi-conductor device
GB1180284A (en) Switching Circuit
GB1193025A (en) Integrated Circuit Arrangement
GB1051271A (xx)
GB1251693A (xx)
GB1043334A (en) Improvements in or relating to amplifying circuit arrangements
GB1098685A (en) Electronic circuit
GB1102590A (en) Comparator circuit
GB1035635A (en) Improvements in or relating to transistor circuit arrangements for supplying a voltage to a load
GB984347A (en) Improvements in or relating to clampable integrating circuit arrangements
GB1120566A (en) Variable threshold logic gate
GB1028650A (en) Improvements relating to threshold logic circuits
GB1135059A (en) Method of making semiconductor devices
GB1116957A (en) Logic circuit