FR1359902A - Circuit intégré de transposition d'une variation de tension électrique - Google Patents

Circuit intégré de transposition d'une variation de tension électrique

Info

Publication number
FR1359902A
FR1359902A FR928887A FR928887A FR1359902A FR 1359902 A FR1359902 A FR 1359902A FR 928887 A FR928887 A FR 928887A FR 928887 A FR928887 A FR 928887A FR 1359902 A FR1359902 A FR 1359902A
Authority
FR
France
Prior art keywords
transposing
integrated circuit
electrical voltage
voltage variation
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR928887A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB1051271D priority Critical patent/GB1051271A/en
Priority to DENDAT121592D priority patent/DE121592C/de
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR928887A priority patent/FR1359902A/fr
Priority to NL6402995A priority patent/NL6402995A/xx
Application granted granted Critical
Publication of FR1359902A publication Critical patent/FR1359902A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09407Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of the same canal type
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C17/00Compasses; Devices for ascertaining true or magnetic north for navigation or surveying purposes
    • G01C17/02Magnetic compasses
    • G01C17/04Magnetic compasses with north-seeking magnetic elements, e.g. needles
    • G01C17/10Comparing observed direction with north indication
    • G01C17/12Comparing observed direction with north indication by sighting means, e.g. for surveyors' compasses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Logic Circuits (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
  • Amplifiers (AREA)
FR928887A 1963-03-22 1963-03-22 Circuit intégré de transposition d'une variation de tension électrique Expired FR1359902A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1051271D GB1051271A (xx) 1963-03-22
DENDAT121592D DE121592C (xx) 1963-03-22
FR928887A FR1359902A (fr) 1963-03-22 1963-03-22 Circuit intégré de transposition d'une variation de tension électrique
NL6402995A NL6402995A (xx) 1963-03-22 1964-03-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR928887A FR1359902A (fr) 1963-03-22 1963-03-22 Circuit intégré de transposition d'une variation de tension électrique

Publications (1)

Publication Number Publication Date
FR1359902A true FR1359902A (fr) 1964-04-30

Family

ID=8799838

Family Applications (1)

Application Number Title Priority Date Filing Date
FR928887A Expired FR1359902A (fr) 1963-03-22 1963-03-22 Circuit intégré de transposition d'une variation de tension électrique

Country Status (4)

Country Link
DE (1) DE121592C (xx)
FR (1) FR1359902A (xx)
GB (1) GB1051271A (xx)
NL (1) NL6402995A (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
FR2230125A1 (en) * 1973-05-16 1974-12-13 Thomson Csf Intergrated FET voltage converter with FET in series with resistor - to give constant difference between input and output voltages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
FR2230125A1 (en) * 1973-05-16 1974-12-13 Thomson Csf Intergrated FET voltage converter with FET in series with resistor - to give constant difference between input and output voltages

Also Published As

Publication number Publication date
DE121592C (xx)
GB1051271A (xx)
NL6402995A (xx) 1964-09-23

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