GB1046187A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1046187A
GB1046187A GB3592664A GB3592664A GB1046187A GB 1046187 A GB1046187 A GB 1046187A GB 3592664 A GB3592664 A GB 3592664A GB 3592664 A GB3592664 A GB 3592664A GB 1046187 A GB1046187 A GB 1046187A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
conductor
layers
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3592664A
Inventor
John Bernard Setchfield
Stanley George Allen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3592664A priority Critical patent/GB1046187A/en
Priority to DE1965J0028816 priority patent/DE1280418C2/en
Priority to CH1213865A priority patent/CH463629A/en
Priority to NL6511387A priority patent/NL6511387A/xx
Priority to BE669078D priority patent/BE669078A/xx
Priority to FR30250A priority patent/FR88814E/en
Priority to SE1143865A priority patent/SE301678B/xx
Publication of GB1046187A publication Critical patent/GB1046187A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,046,187. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Aug. 6, 1965 [Sept. 2, 1964], No. 35926/64. Heading H1K. A method of manufacturing a semi-conductor junction device, such as a tunnel diode, includes the steps of providing a layer of semi-conductor material of one conductivity type on part of a face of an effectively insulating base, providing an electrically conducting layer on another part of the face spaced from the semi-conductor layer, placing a pellet of impurity material of opposite conductivity type in the space with the pellet in contact with both layers, and heating so that the impurity material is alloyed with the semiconductor layer, to form a junction therein, and also with the conducting layer, to form an ohmic connection therewith. A base 1 of semiinsulating gallium arsenide has a layer 2 of P+ germanium epitaxially deposited on one face. Part of the layer is then removed and gold layers 3a, 3b are evaporated over the stepped surface except over areas 4, 5 and 6. The gold layers are then alloyed in and built up by electroplating, and a tin-arsenic sphere 7 is placed in the gap 4 between the gold layer 3a and the semi-conductor layer 2 so as to contact both layers. Heating in a non-oxidizing atmosphere results in the formation of a tunnel junction, and the step 5 is then electrolytically etched to form a narrow neck 8 (Fig. 5, not shown) equivalent to the upstanding neck in conventional tunnel diodes. In a modification (Figs. 10-13, not shown) the layer 2 is removed until only a transverse ridge 17 remains. The base 1 may alternatively consist of a single crystal sapphire, and the semi-conductor material may be gallium antimonide. Forms of diode suitable for direct connection to a coaxial line or strip line are also described.
GB3592664A 1964-09-02 1964-09-02 Improvements in or relating to semiconductor devices Expired GB1046187A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB3592664A GB1046187A (en) 1964-09-02 1964-09-02 Improvements in or relating to semiconductor devices
DE1965J0028816 DE1280418C2 (en) 1964-09-02 1965-08-19 Method for manufacturing a semiconductor component
CH1213865A CH463629A (en) 1964-09-02 1965-08-30 Method of manufacturing semiconductor devices
NL6511387A NL6511387A (en) 1964-09-02 1965-08-31
BE669078D BE669078A (en) 1964-09-02 1965-09-02
FR30250A FR88814E (en) 1964-09-02 1965-09-02 Semiconductor device
SE1143865A SE301678B (en) 1964-09-02 1965-09-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3592664A GB1046187A (en) 1964-09-02 1964-09-02 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1046187A true GB1046187A (en) 1966-10-19

Family

ID=10383078

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3592664A Expired GB1046187A (en) 1964-09-02 1964-09-02 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
BE (1) BE669078A (en)
CH (1) CH463629A (en)
DE (1) DE1280418C2 (en)
GB (1) GB1046187A (en)
NL (1) NL6511387A (en)
SE (1) SE301678B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL275667A (en) * 1961-04-28
FR1320577A (en) * 1961-04-28 1963-03-08 Ibm Semiconductor manufacturing device and method
FR1350402A (en) * 1962-03-16 1964-01-24 Gen Electric Semiconductor devices and manufacturing methods

Also Published As

Publication number Publication date
DE1280418B (en) 1968-10-17
BE669078A (en) 1966-03-02
NL6511387A (en) 1966-03-03
SE301678B (en) 1968-06-17
DE1280418C2 (en) 1973-04-26
CH463629A (en) 1968-10-15

Similar Documents

Publication Publication Date Title
GB1291450A (en) Method of making barrier layer devices and devices so made
GB1000058A (en) Improvements in or relating to semiconductor devices
GB1134656A (en) Insulated-gate field effect triode
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1057817A (en) Semiconductor diodes and methods of making them
GB1046187A (en) Improvements in or relating to semiconductor devices
GB1299468A (en) Method of manufacturing a semiconductor device
GB1108774A (en) Transistors
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors
GB973722A (en) Improvements in or relating to semiconductor devices
GB1268406A (en) Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same
GB1063210A (en) Method of producing semiconductor devices
US3375145A (en) Method of making semiconductor devices
GB1252636A (en)
GB1058036A (en) Semiconductor devices and methods of manufacturing them
GB1139495A (en) Schottky barrier semi-conductor devices
GB1060588A (en) Semiconductor switch
GB1134928A (en) Varactor diode
GB1133422A (en) Improvements in or relating to methods of manufacturing planar transistors
GB1090605A (en) Gunn effect device
GB1353840A (en) High voltage schottky barrier device and method of manufacture
GB1312678A (en) Schottky barrier diode
GB1005917A (en) Semiconductor devices
GB1313252A (en) Semiconductor device and method for making the same
JPS5848469A (en) Field effect transistor