GB1031052A - Silicon semi-conductor diode devices - Google Patents

Silicon semi-conductor diode devices

Info

Publication number
GB1031052A
GB1031052A GB15408/64A GB1540864A GB1031052A GB 1031052 A GB1031052 A GB 1031052A GB 15408/64 A GB15408/64 A GB 15408/64A GB 1540864 A GB1540864 A GB 1540864A GB 1031052 A GB1031052 A GB 1031052A
Authority
GB
United Kingdom
Prior art keywords
zones
faces
drop
april
centres
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15408/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1031052A publication Critical patent/GB1031052A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB15408/64A 1962-04-18 1963-04-18 Silicon semi-conductor diode devices Expired GB1031052A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES79057A DE1208011B (de) 1962-04-18 1962-04-18 Halbleiterbauelement mit mindestens einer p pn- oder n np -Zonenfolge im Silizium-Halbleiterkoerper, insbesondere Halbleiterflaechengleichrichter oder Halbleiterstromtor
DES79613A DE1212218B (de) 1962-04-18 1962-05-25 Verfahren zum Herstellen eines Halbleiterbauelements mit mindestens einer p pn - oder n np -Zonenfolge im Silizium-Halbleiterkoerper

Publications (1)

Publication Number Publication Date
GB1031052A true GB1031052A (en) 1966-05-25

Family

ID=25996843

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15408/64A Expired GB1031052A (en) 1962-04-18 1963-04-18 Silicon semi-conductor diode devices

Country Status (5)

Country Link
US (1) US3254275A (en:Method)
CH (1) CH409152A (en:Method)
DE (2) DE1208011B (en:Method)
GB (1) GB1031052A (en:Method)
NL (1) NL291461A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365627A (en) * 1963-06-18 1968-01-23 Sprague Electric Co Diode circuits and diodes therefor
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3427515A (en) * 1966-06-27 1969-02-11 Rca Corp High voltage semiconductor transistor
US7053404B2 (en) * 2003-12-05 2006-05-30 Stmicroelectronics S.A. Active semiconductor component with an optimized surface area
US20050121691A1 (en) * 2003-12-05 2005-06-09 Jean-Luc Morand Active semiconductor component with a reduced surface area
US9929150B2 (en) * 2012-08-09 2018-03-27 Infineon Technologies Ag Polysilicon diode bandgap reference

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525428A (en:Method) * 1952-12-30
US2908871A (en) * 1954-10-26 1959-10-13 Bell Telephone Labor Inc Negative resistance semiconductive apparatus
US2843516A (en) * 1954-11-08 1958-07-15 Siemens Ag Semiconductor junction rectifier
US2790940A (en) * 1955-04-22 1957-04-30 Bell Telephone Labor Inc Silicon rectifier and method of manufacture
BE546514A (en:Method) * 1955-04-22 1900-01-01
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
FR1252421A (fr) * 1959-03-26 1961-01-27 Ass Elect Ind Procédé de fabrication de jonctions p-n
NL125412C (en:Method) * 1959-04-15

Also Published As

Publication number Publication date
DE1212218B (de) 1966-03-10
CH409152A (de) 1966-03-15
DE1208011B (de) 1965-12-30
NL291461A (en:Method)
US3254275A (en) 1966-05-31

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