NL291461A - - Google Patents

Info

Publication number
NL291461A
NL291461A NL291461DA NL291461A NL 291461 A NL291461 A NL 291461A NL 291461D A NL291461D A NL 291461DA NL 291461 A NL291461 A NL 291461A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL291461A publication Critical patent/NL291461A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
NL291461D 1962-04-18 NL291461A (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES79057A DE1208011B (de) 1962-04-18 1962-04-18 Halbleiterbauelement mit mindestens einer p pn- oder n np -Zonenfolge im Silizium-Halbleiterkoerper, insbesondere Halbleiterflaechengleichrichter oder Halbleiterstromtor
DES79613A DE1212218B (de) 1962-04-18 1962-05-25 Verfahren zum Herstellen eines Halbleiterbauelements mit mindestens einer p pn - oder n np -Zonenfolge im Silizium-Halbleiterkoerper

Publications (1)

Publication Number Publication Date
NL291461A true NL291461A (en:Method)

Family

ID=25996843

Family Applications (1)

Application Number Title Priority Date Filing Date
NL291461D NL291461A (en:Method) 1962-04-18

Country Status (5)

Country Link
US (1) US3254275A (en:Method)
CH (1) CH409152A (en:Method)
DE (2) DE1208011B (en:Method)
GB (1) GB1031052A (en:Method)
NL (1) NL291461A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365627A (en) * 1963-06-18 1968-01-23 Sprague Electric Co Diode circuits and diodes therefor
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3427515A (en) * 1966-06-27 1969-02-11 Rca Corp High voltage semiconductor transistor
US7053404B2 (en) * 2003-12-05 2006-05-30 Stmicroelectronics S.A. Active semiconductor component with an optimized surface area
US20050121691A1 (en) * 2003-12-05 2005-06-09 Jean-Luc Morand Active semiconductor component with a reduced surface area
US9929150B2 (en) * 2012-08-09 2018-03-27 Infineon Technologies Ag Polysilicon diode bandgap reference

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525428A (en:Method) * 1952-12-30
US2908871A (en) * 1954-10-26 1959-10-13 Bell Telephone Labor Inc Negative resistance semiconductive apparatus
US2843516A (en) * 1954-11-08 1958-07-15 Siemens Ag Semiconductor junction rectifier
NL107361C (en:Method) * 1955-04-22 1900-01-01
US2790940A (en) * 1955-04-22 1957-04-30 Bell Telephone Labor Inc Silicon rectifier and method of manufacture
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
FR1252421A (fr) * 1959-03-26 1961-01-27 Ass Elect Ind Procédé de fabrication de jonctions p-n
NL155412C (en:Method) * 1959-04-15

Also Published As

Publication number Publication date
DE1208011B (de) 1965-12-30
US3254275A (en) 1966-05-31
CH409152A (de) 1966-03-15
DE1212218B (de) 1966-03-10
GB1031052A (en) 1966-05-25

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