GB1031052A - Silicon semi-conductor diode devices - Google Patents
Silicon semi-conductor diode devicesInfo
- Publication number
- GB1031052A GB1031052A GB15408/64A GB1540864A GB1031052A GB 1031052 A GB1031052 A GB 1031052A GB 15408/64 A GB15408/64 A GB 15408/64A GB 1540864 A GB1540864 A GB 1540864A GB 1031052 A GB1031052 A GB 1031052A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- faces
- drop
- april
- centres
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/00—
-
- H10P95/00—
-
- H10P95/50—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES79057A DE1208011B (de) | 1962-04-18 | 1962-04-18 | Halbleiterbauelement mit mindestens einer p pn- oder n np -Zonenfolge im Silizium-Halbleiterkoerper, insbesondere Halbleiterflaechengleichrichter oder Halbleiterstromtor |
| DES79613A DE1212218B (de) | 1962-04-18 | 1962-05-25 | Verfahren zum Herstellen eines Halbleiterbauelements mit mindestens einer p pn - oder n np -Zonenfolge im Silizium-Halbleiterkoerper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1031052A true GB1031052A (en) | 1966-05-25 |
Family
ID=25996843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB15408/64A Expired GB1031052A (en) | 1962-04-18 | 1963-04-18 | Silicon semi-conductor diode devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3254275A (cg-RX-API-DMAC10.html) |
| CH (1) | CH409152A (cg-RX-API-DMAC10.html) |
| DE (2) | DE1208011B (cg-RX-API-DMAC10.html) |
| GB (1) | GB1031052A (cg-RX-API-DMAC10.html) |
| NL (1) | NL291461A (cg-RX-API-DMAC10.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3365627A (en) * | 1963-06-18 | 1968-01-23 | Sprague Electric Co | Diode circuits and diodes therefor |
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| US3427515A (en) * | 1966-06-27 | 1969-02-11 | Rca Corp | High voltage semiconductor transistor |
| US20050121691A1 (en) * | 2003-12-05 | 2005-06-09 | Jean-Luc Morand | Active semiconductor component with a reduced surface area |
| US7053404B2 (en) * | 2003-12-05 | 2006-05-30 | Stmicroelectronics S.A. | Active semiconductor component with an optimized surface area |
| US9929150B2 (en) * | 2012-08-09 | 2018-03-27 | Infineon Technologies Ag | Polysilicon diode bandgap reference |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE525428A (cg-RX-API-DMAC10.html) * | 1952-12-30 | |||
| US2908871A (en) * | 1954-10-26 | 1959-10-13 | Bell Telephone Labor Inc | Negative resistance semiconductive apparatus |
| US2843516A (en) * | 1954-11-08 | 1958-07-15 | Siemens Ag | Semiconductor junction rectifier |
| NL107361C (cg-RX-API-DMAC10.html) * | 1955-04-22 | 1900-01-01 | ||
| US2790940A (en) * | 1955-04-22 | 1957-04-30 | Bell Telephone Labor Inc | Silicon rectifier and method of manufacture |
| US3085310A (en) * | 1958-12-12 | 1963-04-16 | Ibm | Semiconductor device |
| FR1252421A (fr) * | 1959-03-26 | 1961-01-27 | Ass Elect Ind | Procédé de fabrication de jonctions p-n |
| NL125412C (cg-RX-API-DMAC10.html) * | 1959-04-15 |
-
0
- NL NL291461D patent/NL291461A/xx unknown
-
1962
- 1962-04-18 DE DES79057A patent/DE1208011B/de active Pending
- 1962-05-25 DE DES79613A patent/DE1212218B/de active Pending
-
1963
- 1963-04-02 CH CH413663A patent/CH409152A/de unknown
- 1963-04-16 US US273510A patent/US3254275A/en not_active Expired - Lifetime
- 1963-04-18 GB GB15408/64A patent/GB1031052A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL291461A (cg-RX-API-DMAC10.html) | |
| US3254275A (en) | 1966-05-31 |
| DE1212218B (de) | 1966-03-10 |
| CH409152A (de) | 1966-03-15 |
| DE1208011B (de) | 1965-12-30 |
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