GB1026862A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB1026862A
GB1026862A GB30551/62A GB3055162A GB1026862A GB 1026862 A GB1026862 A GB 1026862A GB 30551/62 A GB30551/62 A GB 30551/62A GB 3055162 A GB3055162 A GB 3055162A GB 1026862 A GB1026862 A GB 1026862A
Authority
GB
United Kingdom
Prior art keywords
wafers
germanium
semi
coating
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30551/62A
Inventor
Patrick Joseph Augusti Mckeown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB30551/62A priority Critical patent/GB1026862A/en
Publication of GB1026862A publication Critical patent/GB1026862A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A germanium semi-conductor body is coated with germanium-dioxide formed by hydrolysis of germanium tetrachloride vapour. The coating may be provided over a wafer having impurity pellets pressed on to its surface, and, after alloying of the pellets to form P-N junctions, removed. In Fig. 4 (not shown), a number of dot-pressed Ge wafers 41 are loaded on to polythene jig 42, and streams of air saturated with GeCl4 from 45 and dionized steam from 47 are passed over the wafers to form the GeO2 coating. Any condensed HCl is removed with acetone. The coated wafers are then heated in an oxidizing atmosphere at 570 DEG C. for 5 mins. and cooled to below 100 DEG C.
GB30551/62A 1962-08-09 1962-08-09 Improvements in or relating to semi-conductor devices Expired GB1026862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB30551/62A GB1026862A (en) 1962-08-09 1962-08-09 Improvements in or relating to semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB30551/62A GB1026862A (en) 1962-08-09 1962-08-09 Improvements in or relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
GB1026862A true GB1026862A (en) 1966-04-20

Family

ID=10309411

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30551/62A Expired GB1026862A (en) 1962-08-09 1962-08-09 Improvements in or relating to semi-conductor devices

Country Status (1)

Country Link
GB (1) GB1026862A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111484069A (en) * 2020-04-20 2020-08-04 湖北联合贵稀资源再生科技有限公司 Preparation method of germanium dioxide powder
CN117107357A (en) * 2023-10-23 2023-11-24 中铝科学技术研究院有限公司 Germanium rod for vapor deposition, preparation method thereof and germanium tetrachloride reduction device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111484069A (en) * 2020-04-20 2020-08-04 湖北联合贵稀资源再生科技有限公司 Preparation method of germanium dioxide powder
CN111484069B (en) * 2020-04-20 2023-09-29 湖北联合贵稀资源再生科技有限公司 Preparation method of germanium dioxide powder
CN117107357A (en) * 2023-10-23 2023-11-24 中铝科学技术研究院有限公司 Germanium rod for vapor deposition, preparation method thereof and germanium tetrachloride reduction device
CN117107357B (en) * 2023-10-23 2024-04-19 中铝科学技术研究院有限公司 Germanium rod for vapor deposition, preparation method thereof and germanium tetrachloride reduction device

Similar Documents

Publication Publication Date Title
GB839082A (en) Improvements in or relating to processes for making transistors
GB988897A (en) Epitaxial growth process
GB889192A (en) Improvements in or relating to processes and apparatus for the production of ultra-pure semi-conductor substances
GB1024509A (en) A passivated semiconductor device and method of making same
ES249909A1 (en) Vapor-solid diffusion of semiconductive material
GB1026862A (en) Improvements in or relating to semi-conductor devices
GB929575A (en) Semiconductor devices and methods of making them
GB1068189A (en) The production of semiconductor components
GB1014287A (en) The production of an oxide coating on a substantially monocrystalline semi-conductorbody
GB997164A (en) Improvements in methods for producing silicon dioxide films
GB1006803A (en) Improvements in or relating to semiconductor devices
GB990518A (en) Improvements in methods of producing an unsaturated vapour pressure of a substance in a space
GB1004257A (en) Improvements in or relating to processes for the preparation of semiconductor arrangements
GB849550A (en) Improvements in or relating to the heat treatment of silicon
GB743608A (en) Diffusion type semi-conductor devices
GB977003A (en) Improvements in or relating to semi-conductor arrangements
GB1117359A (en) Improvements relating to semiconductor elements
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
GB794674A (en) Improvements in or relating to methods of forming a junction in a semiconductor
GB1079046A (en) Improvements in and relating to semiconductor devices
GB966594A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB1014500A (en) Purifying semi-conductor materials
GB974057A (en) Improvements in and relating to spring elements
GB975990A (en) Improvements relating to silicon controlled rectifiers
GB1010895A (en) Semiconductor material