GB1020331A - Semiconductors - Google Patents
SemiconductorsInfo
- Publication number
- GB1020331A GB1020331A GB2724562A GB2724562A GB1020331A GB 1020331 A GB1020331 A GB 1020331A GB 2724562 A GB2724562 A GB 2724562A GB 2724562 A GB2724562 A GB 2724562A GB 1020331 A GB1020331 A GB 1020331A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- substrate
- conductor
- silicon
- conductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 14
- 239000000463 material Substances 0.000 abstract 10
- 239000000758 substrate Substances 0.000 abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 4
- 239000007787 solid Substances 0.000 abstract 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 3
- 229910052715 tantalum Inorganic materials 0.000 abstract 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- 229910000676 Si alloy Inorganic materials 0.000 abstract 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 229910003676 SiBr4 Inorganic materials 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 229910003822 SiHCl3 Inorganic materials 0.000 abstract 1
- 229910004480 SiI4 Inorganic materials 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B17/00—Fire alarms; Alarms responsive to explosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12857261A | 1961-08-01 | 1961-08-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1020331A true GB1020331A (en) | 1966-02-16 |
Family
ID=22435964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2724562A Expired GB1020331A (en) | 1961-08-01 | 1962-07-16 | Semiconductors |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE620905A (da) |
| CH (1) | CH422995A (da) |
| DK (1) | DK118515B (da) |
| GB (1) | GB1020331A (da) |
| NL (1) | NL281600A (da) |
-
0
- NL NL281600D patent/NL281600A/xx unknown
- BE BE620905D patent/BE620905A/xx unknown
-
1962
- 1962-07-16 GB GB2724562A patent/GB1020331A/en not_active Expired
- 1962-07-31 DK DK338762A patent/DK118515B/da unknown
- 1962-08-01 CH CH921062A patent/CH422995A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DK118515B (da) | 1970-08-31 |
| CH422995A (fr) | 1966-10-31 |
| NL281600A (da) | |
| BE620905A (da) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2898248A (en) | Method of fabricating germanium bodies | |
| GB1399163A (en) | Methods of manufacturing semiconductor devices | |
| GB991370A (en) | Semi-conductor material and method of manufacture | |
| GB949799A (en) | Process for the production of crystalline semi-conductor material | |
| GB823317A (en) | Improvements in or relating to methods of making semiconductor bodies | |
| GB1173330A (en) | A method for Forming Electrode in Semiconductor Devices | |
| GB1134656A (en) | Insulated-gate field effect triode | |
| US3158504A (en) | Method of alloying an ohmic contact to a semiconductor | |
| GB1178765A (en) | Improvements in or relating to the Processing of Semiconductor Bodies | |
| US3665594A (en) | Method of joining a body of semiconductor material to a contact or support member | |
| Edmond | Heat Treatment of Gallium Arsenide | |
| US3178313A (en) | Epitaxial growth of binary semiconductors | |
| GB1020331A (en) | Semiconductors | |
| US3220380A (en) | Deposition chamber including heater element enveloped by a quartz workholder | |
| GB1017355A (en) | Unipolar transistor | |
| Seidensticker | Kinetic effects in temperature gradient zone melting | |
| GB1263580A (en) | Improvements in or relating to the production of a tubular body of a semiconductor material | |
| US3172792A (en) | Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material | |
| US3043726A (en) | Method of producing semi-conductor electrode systems | |
| GB1190992A (en) | Improved method of Depositing Semiconductor Material | |
| JPS637624A (ja) | ３−ｖ族化合物半導体材料中への導電形付与物質の拡散方法 | |
| GB1274494A (en) | A method of fabricating semiconductor power devices within high resistivity isolation rings | |
| US2897105A (en) | Formation of p-n junctions | |
| GB1075555A (en) | Process for the formation of a layer of a semiconductor material on a crystalline base | |
| US3409467A (en) | Silicon carbide device |