GB1010063A - Method of preparing semi-conducting substances - Google Patents

Method of preparing semi-conducting substances

Info

Publication number
GB1010063A
GB1010063A GB34990/61A GB3499061A GB1010063A GB 1010063 A GB1010063 A GB 1010063A GB 34990/61 A GB34990/61 A GB 34990/61A GB 3499061 A GB3499061 A GB 3499061A GB 1010063 A GB1010063 A GB 1010063A
Authority
GB
United Kingdom
Prior art keywords
semi
compound
alkyl
substance
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34990/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1010063A publication Critical patent/GB1010063A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/008—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB34990/61A 1960-09-28 1961-09-28 Method of preparing semi-conducting substances Expired GB1010063A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES70592A DE1281404B (de) 1960-09-28 1960-09-28 Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten

Publications (1)

Publication Number Publication Date
GB1010063A true GB1010063A (en) 1965-11-17

Family

ID=7501851

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34990/61A Expired GB1010063A (en) 1960-09-28 1961-09-28 Method of preparing semi-conducting substances

Country Status (6)

Country Link
US (1) US3342551A (https=)
BE (1) BE608496A (https=)
CH (1) CH441240A (https=)
DE (1) DE1281404B (https=)
GB (1) GB1010063A (https=)
NL (1) NL269557A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141778A (en) * 1976-02-12 1979-02-27 Domrachev Georgy A Method of preparing crystalline compounds AIVA BVIA
US4250205A (en) 1977-09-16 1981-02-10 Agence Nationale De Valorisation De La Recherche (Anvar) Process for depositing a III-V semi-conductor layer on a substrate

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
US4814203A (en) * 1986-09-29 1989-03-21 Ethyl Corporation Vapor deposition of arsenic

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2020298A (en) * 1935-11-12 Cyclic ester
US2464685A (en) * 1946-12-02 1949-03-15 Diamond Alkali Co Continuous grignard method
AT211792B (de) * 1953-10-02 1960-11-10 Int Standard Electric Corp Verfahren zur Herstellung von Kristalliten oder einem Einkristall aus einen Gehalt an Störstoffen besitzendem halbleitendem Material bzw. von Halbleiterlegierungen
US2980500A (en) * 1958-04-25 1961-04-18 Monsanto Chemicals Method for the preparation of semiconductor cadmium compounds
US3010792A (en) * 1959-08-31 1961-11-28 Union Carbide Corp Preparation of indium phosphide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141778A (en) * 1976-02-12 1979-02-27 Domrachev Georgy A Method of preparing crystalline compounds AIVA BVIA
US4250205A (en) 1977-09-16 1981-02-10 Agence Nationale De Valorisation De La Recherche (Anvar) Process for depositing a III-V semi-conductor layer on a substrate

Also Published As

Publication number Publication date
NL269557A (https=)
US3342551A (en) 1967-09-19
DE1281404B (de) 1968-10-24
CH441240A (de) 1967-08-15
BE608496A (fr) 1962-01-15

Similar Documents

Publication Publication Date Title
Perri et al. New group III-group V compounds: BP and BAs
Ohata et al. Phase diagram of the CdS-CdTe pseudobinary system
US3065113A (en) Compound semiconductor material control
Nakajima et al. Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates
GB1011979A (en) Production of epitaxial films
Shaw A comparative thermodynamic analysis of InP and GaAs deposition
GB1010063A (en) Method of preparing semi-conducting substances
GB1135170A (en) One-step method of converting uranium hexafluoride to uranium compounds
GB1148659A (en) Method and apparatus for preparing group iii-v materials
GB967185A (en) Method of producing specified ó¾í¬v compounds
GB1005425A (en) Improvements in boron nitride
Jordan The liquidus surfaces of ternary systems involving compound semiconductors: II. Calculation of the liquidus isotherms and component partial pressures in the Ga− As− Zn and Ga− P− Zn systems
GB926807A (en) Methods of forming silicon and silicon formed by the method
GB1032604A (en) A process for use in the production of crystalline boron phosphide
GB960451A (en) Improved compound semiconductor material and method of making same
Osamura et al. Experiments and Calculation of the Al‐Ga‐Sb Ternary Phase Diagram
US3297403A (en) Method for the preparation of intermetallic compounds
GB916498A (en) Improvements relating to the production of semi-conducting materials
Charykov et al. Solid solution InxGa1− x AsySbzP1− y− z: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy
Xue et al. Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy
JPS54162451A (en) Heat treatment method of compound semiconductor and its heat treatment unit
Gokhale et al. The Ge-Pr (Germanium-Praseodymium) System
GB1102205A (en) Improvements in or relating to epitaxially grown layers of binary semiconductor compounds
Brewer Non-stoichiometry in non-metallic compounds
JPS5334469A (en) Forming method for iii-v group chemical compound semiconductor insulating film