GB1006458A - Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix - Google Patents

Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix

Info

Publication number
GB1006458A
GB1006458A GB426163A GB426163A GB1006458A GB 1006458 A GB1006458 A GB 1006458A GB 426163 A GB426163 A GB 426163A GB 426163 A GB426163 A GB 426163A GB 1006458 A GB1006458 A GB 1006458A
Authority
GB
United Kingdom
Prior art keywords
effected
diode
tunnel diode
tunnel
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB426163A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB1006458A publication Critical patent/GB1006458A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Control Of El Displays (AREA)
  • Static Random-Access Memory (AREA)

Abstract

1,006,458. Tunnel diode matrix stores. STANDARD TELEPHONES & CABLES Ltd. Feb. 1, 1963 [Feb. 3, 1962], No. 4261/63. Heading G4C. [Also in Division H3] A storage matrix is formed from circuit elements (see Division H3) comprising a tunnel diode TD fed from a constant current source and having in parallel an inductor L and an ordinary diode D or a similar non-linear resistor. The arrangement is such that the characteristics of the two diodes are as shown in Fig. 2b so that the circuit element has two stable operating points 1 and 2. Storage is effected by applying half-current pulses simultaneously to the required row and column lines X, Y and reading out is effected by applying a small current pulse to a row line to produce an output pulse in the common inductor L of those tunnel diodes which, because they are in the high voltage condition, permit the corresponding diode D to conduct. Clearing of the information is effected by interrupting the bias current Io.
GB426163A 1962-02-03 1963-02-01 Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix Expired GB1006458A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEST018823 1962-02-03
DEST18897A DE1170167B (en) 1962-02-03 1962-02-24 Storage matrix with tunnel diodes

Publications (1)

Publication Number Publication Date
GB1006458A true GB1006458A (en) 1965-10-06

Family

ID=25994078

Family Applications (2)

Application Number Title Priority Date Filing Date
GB426163A Expired GB1006458A (en) 1962-02-03 1963-02-01 Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix
GB726863A Expired GB1002727A (en) 1962-02-03 1963-02-22 Storage matrix comprising tunnel diodes

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB726863A Expired GB1002727A (en) 1962-02-03 1963-02-22 Storage matrix comprising tunnel diodes

Country Status (5)

Country Link
BE (2) BE627881A (en)
CH (1) CH406311A (en)
DE (1) DE1170167B (en)
GB (2) GB1006458A (en)
NL (2) NL289382A (en)

Also Published As

Publication number Publication date
NL289382A (en)
CH406311A (en) 1966-01-31
BE628752A (en)
NL288507A (en)
GB1002727A (en) 1965-08-25
DE1170167B (en) 1964-05-14
BE627881A (en)

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