GB1006458A - Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix - Google Patents
Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrixInfo
- Publication number
- GB1006458A GB1006458A GB426163A GB426163A GB1006458A GB 1006458 A GB1006458 A GB 1006458A GB 426163 A GB426163 A GB 426163A GB 426163 A GB426163 A GB 426163A GB 1006458 A GB1006458 A GB 1006458A
- Authority
- GB
- United Kingdom
- Prior art keywords
- effected
- diode
- tunnel diode
- tunnel
- feb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Control Of El Displays (AREA)
- Static Random-Access Memory (AREA)
Abstract
1,006,458. Tunnel diode matrix stores. STANDARD TELEPHONES & CABLES Ltd. Feb. 1, 1963 [Feb. 3, 1962], No. 4261/63. Heading G4C. [Also in Division H3] A storage matrix is formed from circuit elements (see Division H3) comprising a tunnel diode TD fed from a constant current source and having in parallel an inductor L and an ordinary diode D or a similar non-linear resistor. The arrangement is such that the characteristics of the two diodes are as shown in Fig. 2b so that the circuit element has two stable operating points 1 and 2. Storage is effected by applying half-current pulses simultaneously to the required row and column lines X, Y and reading out is effected by applying a small current pulse to a row line to produce an output pulse in the common inductor L of those tunnel diodes which, because they are in the high voltage condition, permit the corresponding diode D to conduct. Clearing of the information is effected by interrupting the bias current Io.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEST018823 | 1962-02-03 | ||
DEST18897A DE1170167B (en) | 1962-02-03 | 1962-02-24 | Storage matrix with tunnel diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1006458A true GB1006458A (en) | 1965-10-06 |
Family
ID=25994078
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB426163A Expired GB1006458A (en) | 1962-02-03 | 1963-02-01 | Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix |
GB726863A Expired GB1002727A (en) | 1962-02-03 | 1963-02-22 | Storage matrix comprising tunnel diodes |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB726863A Expired GB1002727A (en) | 1962-02-03 | 1963-02-22 | Storage matrix comprising tunnel diodes |
Country Status (5)
Country | Link |
---|---|
BE (2) | BE627881A (en) |
CH (1) | CH406311A (en) |
DE (1) | DE1170167B (en) |
GB (2) | GB1006458A (en) |
NL (2) | NL289382A (en) |
-
0
- BE BE628752D patent/BE628752A/xx unknown
- BE BE627881D patent/BE627881A/xx unknown
- NL NL288507D patent/NL288507A/xx unknown
- NL NL289382D patent/NL289382A/xx unknown
-
1962
- 1962-02-24 DE DEST18897A patent/DE1170167B/en active Pending
-
1963
- 1963-02-01 GB GB426163A patent/GB1006458A/en not_active Expired
- 1963-02-22 GB GB726863A patent/GB1002727A/en not_active Expired
- 1963-02-22 CH CH227163A patent/CH406311A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL289382A (en) | |
CH406311A (en) | 1966-01-31 |
BE628752A (en) | |
NL288507A (en) | |
GB1002727A (en) | 1965-08-25 |
DE1170167B (en) | 1964-05-14 |
BE627881A (en) |
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