GB1002727A - Storage matrix comprising tunnel diodes - Google Patents

Storage matrix comprising tunnel diodes

Info

Publication number
GB1002727A
GB1002727A GB726863A GB726863A GB1002727A GB 1002727 A GB1002727 A GB 1002727A GB 726863 A GB726863 A GB 726863A GB 726863 A GB726863 A GB 726863A GB 1002727 A GB1002727 A GB 1002727A
Authority
GB
United Kingdom
Prior art keywords
diodes
tunnel
column
diode
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB726863A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB1002727A publication Critical patent/GB1002727A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Control Of El Displays (AREA)
  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

1,002,727. Tunnel diode matrix stores. STANDARD TELEPHONES & CABLES Ltd. Feb. 22, 1963 [Feb. 24, 1962], No. 7268/63. Heading G4C. [Also in Division H3] In a tunnel diode matrix store in which each diode is connected through resistors to the column and row wires, read-out is effected by applying pulses to the tunnel diodes in a row so as to render individual read-out diodes conductive if the tunnel diodes are in one binary condition, the read-out diodes in each column being connected to a line common to the column. The Figure shows a storage matrix comprising a number of tunnel diodes TD biased by a current Io so as to have two stable operating conditions. The tunnel diodes may be reset to the low voltage condition by momentarily interrupting the supply current and may be set to the high voltage condition by applying a half amplitude pulse simultaneously to a row line y and a column line x. In the high voltage condition the bias on the coupling diodes D is reduced to such a value that the diode is almost conducting, and non-destructive read-out may be effected by momentarily open-circuiting a switch F shunting resistor R1 so as to reduce the diode bias. Current will accordingly flow in those coupling diodes which are connected to tunnel diodes in the high voltage state and produce an output pulse in the column lines A1, A2 &c.
GB726863A 1962-02-03 1963-02-22 Storage matrix comprising tunnel diodes Expired GB1002727A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEST018823 1962-02-03
DEST18897A DE1170167B (en) 1962-02-03 1962-02-24 Storage matrix with tunnel diodes

Publications (1)

Publication Number Publication Date
GB1002727A true GB1002727A (en) 1965-08-25

Family

ID=25994078

Family Applications (2)

Application Number Title Priority Date Filing Date
GB426163A Expired GB1006458A (en) 1962-02-03 1963-02-01 Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix
GB726863A Expired GB1002727A (en) 1962-02-03 1963-02-22 Storage matrix comprising tunnel diodes

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB426163A Expired GB1006458A (en) 1962-02-03 1963-02-01 Bistable storage element comprising a tunnel diode, and the use thereof in a storagematrix

Country Status (5)

Country Link
BE (2) BE627881A (en)
CH (1) CH406311A (en)
DE (1) DE1170167B (en)
GB (2) GB1006458A (en)
NL (2) NL289382A (en)

Also Published As

Publication number Publication date
NL289382A (en)
GB1006458A (en) 1965-10-06
CH406311A (en) 1966-01-31
DE1170167B (en) 1964-05-14
NL288507A (en)
BE628752A (en)
BE627881A (en)

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