GB1005989A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1005989A
GB1005989A GB40744/63A GB4074463A GB1005989A GB 1005989 A GB1005989 A GB 1005989A GB 40744/63 A GB40744/63 A GB 40744/63A GB 4074463 A GB4074463 A GB 4074463A GB 1005989 A GB1005989 A GB 1005989A
Authority
GB
United Kingdom
Prior art keywords
junction
gaas
type
pict
charge carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40744/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US237501A external-priority patent/US3369132A/en
Priority claimed from US239434A external-priority patent/US3369133A/en
Priority claimed from US244682A external-priority patent/US3278814A/en
Priority claimed from US246794A external-priority patent/US3229104A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1005989A publication Critical patent/GB1005989A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
GB40744/63A 1962-11-14 1963-10-16 Improvements in or relating to semiconductor devices Expired GB1005989A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US237501A US3369132A (en) 1962-11-14 1962-11-14 Opto-electronic semiconductor devices
US239434A US3369133A (en) 1962-11-23 1962-11-23 Fast responding semiconductor device using light as the transporting medium
US244682A US3278814A (en) 1962-12-14 1962-12-14 High-gain photon-coupled semiconductor device
US246794A US3229104A (en) 1962-12-24 1962-12-24 Four terminal electro-optical semiconductor device using light coupling

Publications (1)

Publication Number Publication Date
GB1005989A true GB1005989A (en) 1965-09-29

Family

ID=27499883

Family Applications (2)

Application Number Title Priority Date Filing Date
GB40744/63A Expired GB1005989A (en) 1962-11-14 1963-10-16 Improvements in or relating to semiconductor devices
GB40963/63A Expired GB1010142A (en) 1962-11-14 1963-10-17 Improvements in or relating to semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB40963/63A Expired GB1010142A (en) 1962-11-14 1963-10-17 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
BE (1) BE639961A (en:Method)
CA (2) CA928431A (en:Method)
CH (3) CH427066A (en:Method)
DE (3) DE1464713A1 (en:Method)
GB (2) GB1005989A (en:Method)
NL (2) NL143787C (en:Method)

Also Published As

Publication number Publication date
CH427066A (de) 1966-12-31
DE1464713A1 (de) 1970-04-16
BE639961A (en:Method)
DE1464715B2 (de) 1974-10-03
DE1464720A1 (de) 1968-11-07
CH433528A (de) 1967-04-15
DE1464715A1 (de) 1968-11-14
CA928432A (en) 1973-06-12
GB1010142A (en) 1965-11-17
DE1464715C3 (de) 1975-05-22
CA928431A (en) 1973-06-12
NL299170A (en:Method)
CH435476A (de) 1967-05-15
NL143787C (nl) 1974-10-15

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