GB0609167D0 - Semiconductor bonding techniques - Google Patents

Semiconductor bonding techniques

Info

Publication number
GB0609167D0
GB0609167D0 GBGB0609167.2A GB0609167A GB0609167D0 GB 0609167 D0 GB0609167 D0 GB 0609167D0 GB 0609167 A GB0609167 A GB 0609167A GB 0609167 D0 GB0609167 D0 GB 0609167D0
Authority
GB
United Kingdom
Prior art keywords
bonding techniques
semiconductor bonding
semiconductor
techniques
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0609167.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Open University
Original Assignee
Open University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Open University filed Critical Open University
Priority to GBGB0609167.2A priority Critical patent/GB0609167D0/en
Publication of GB0609167D0 publication Critical patent/GB0609167D0/en
Priority to GB0708109A priority patent/GB2458256B/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
GBGB0609167.2A 2006-05-10 2006-05-10 Semiconductor bonding techniques Ceased GB0609167D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0609167.2A GB0609167D0 (en) 2006-05-10 2006-05-10 Semiconductor bonding techniques
GB0708109A GB2458256B (en) 2006-05-10 2007-04-26 Semiconductor bonding techiniques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0609167.2A GB0609167D0 (en) 2006-05-10 2006-05-10 Semiconductor bonding techniques

Publications (1)

Publication Number Publication Date
GB0609167D0 true GB0609167D0 (en) 2006-06-21

Family

ID=36637162

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0609167.2A Ceased GB0609167D0 (en) 2006-05-10 2006-05-10 Semiconductor bonding techniques
GB0708109A Expired - Fee Related GB2458256B (en) 2006-05-10 2007-04-26 Semiconductor bonding techiniques

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0708109A Expired - Fee Related GB2458256B (en) 2006-05-10 2007-04-26 Semiconductor bonding techiniques

Country Status (1)

Country Link
GB (2) GB0609167D0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112053939B (en) * 2020-07-07 2023-01-17 北京华卓精科科技股份有限公司 Wafer bonding method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212129A (en) * 1982-06-03 1983-12-09 Anelva Corp Manufacture of amorphous semiconductor film
JP3980539B2 (en) * 2003-08-29 2007-09-26 唯知 須賀 Substrate bonding method, irradiation method, and substrate bonding apparatus

Also Published As

Publication number Publication date
GB2458256B (en) 2011-08-03
GB2458256A (en) 2009-09-16
GB0708109D0 (en) 2007-06-06

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)