GB2458256B - Semiconductor bonding techiniques - Google Patents
Semiconductor bonding techiniquesInfo
- Publication number
- GB2458256B GB2458256B GB0708109A GB0708109A GB2458256B GB 2458256 B GB2458256 B GB 2458256B GB 0708109 A GB0708109 A GB 0708109A GB 0708109 A GB0708109 A GB 0708109A GB 2458256 B GB2458256 B GB 2458256B
- Authority
- GB
- United Kingdom
- Prior art keywords
- techiniques
- semiconductor bonding
- bonding
- semiconductor
- bonding techiniques
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0609167.2A GB0609167D0 (en) | 2006-05-10 | 2006-05-10 | Semiconductor bonding techniques |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0708109D0 GB0708109D0 (en) | 2007-06-06 |
GB2458256A GB2458256A (en) | 2009-09-16 |
GB2458256B true GB2458256B (en) | 2011-08-03 |
Family
ID=36637162
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0609167.2A Ceased GB0609167D0 (en) | 2006-05-10 | 2006-05-10 | Semiconductor bonding techniques |
GB0708109A Expired - Fee Related GB2458256B (en) | 2006-05-10 | 2007-04-26 | Semiconductor bonding techiniques |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0609167.2A Ceased GB0609167D0 (en) | 2006-05-10 | 2006-05-10 | Semiconductor bonding techniques |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB0609167D0 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112053939B (en) * | 2020-07-07 | 2023-01-17 | 北京华卓精科科技股份有限公司 | Wafer bonding method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212129A (en) * | 1982-06-03 | 1983-12-09 | Anelva Corp | Manufacture of amorphous semiconductor film |
JPS641234A (en) * | 1987-06-23 | 1989-01-05 | Mitsubishi Electric Corp | Plasma device |
EP1518669A2 (en) * | 2003-08-29 | 2005-03-30 | Tadatomo Suga | Method for bonding substrates and method for irradiating particle beam to be utilized therefor |
-
2006
- 2006-05-10 GB GBGB0609167.2A patent/GB0609167D0/en not_active Ceased
-
2007
- 2007-04-26 GB GB0708109A patent/GB2458256B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212129A (en) * | 1982-06-03 | 1983-12-09 | Anelva Corp | Manufacture of amorphous semiconductor film |
JPS641234A (en) * | 1987-06-23 | 1989-01-05 | Mitsubishi Electric Corp | Plasma device |
EP1518669A2 (en) * | 2003-08-29 | 2005-03-30 | Tadatomo Suga | Method for bonding substrates and method for irradiating particle beam to be utilized therefor |
Also Published As
Publication number | Publication date |
---|---|
GB0708109D0 (en) | 2007-06-06 |
GB0609167D0 (en) | 2006-06-21 |
GB2458256A (en) | 2009-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20170426 |