GB2458256B - Semiconductor bonding techiniques - Google Patents

Semiconductor bonding techiniques

Info

Publication number
GB2458256B
GB2458256B GB0708109A GB0708109A GB2458256B GB 2458256 B GB2458256 B GB 2458256B GB 0708109 A GB0708109 A GB 0708109A GB 0708109 A GB0708109 A GB 0708109A GB 2458256 B GB2458256 B GB 2458256B
Authority
GB
United Kingdom
Prior art keywords
techiniques
semiconductor bonding
bonding
semiconductor
bonding techiniques
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0708109A
Other versions
GB0708109D0 (en
GB2458256A (en
Inventor
Nick Braithwaite
Jafar Al-Kuzee
Paulo Lima
Jan Kowal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Open University
Original Assignee
Open University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Open University filed Critical Open University
Publication of GB0708109D0 publication Critical patent/GB0708109D0/en
Publication of GB2458256A publication Critical patent/GB2458256A/en
Application granted granted Critical
Publication of GB2458256B publication Critical patent/GB2458256B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
GB0708109A 2006-05-10 2007-04-26 Semiconductor bonding techiniques Expired - Fee Related GB2458256B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0609167.2A GB0609167D0 (en) 2006-05-10 2006-05-10 Semiconductor bonding techniques

Publications (3)

Publication Number Publication Date
GB0708109D0 GB0708109D0 (en) 2007-06-06
GB2458256A GB2458256A (en) 2009-09-16
GB2458256B true GB2458256B (en) 2011-08-03

Family

ID=36637162

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0609167.2A Ceased GB0609167D0 (en) 2006-05-10 2006-05-10 Semiconductor bonding techniques
GB0708109A Expired - Fee Related GB2458256B (en) 2006-05-10 2007-04-26 Semiconductor bonding techiniques

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0609167.2A Ceased GB0609167D0 (en) 2006-05-10 2006-05-10 Semiconductor bonding techniques

Country Status (1)

Country Link
GB (2) GB0609167D0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112053939B (en) * 2020-07-07 2023-01-17 北京华卓精科科技股份有限公司 Wafer bonding method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212129A (en) * 1982-06-03 1983-12-09 Anelva Corp Manufacture of amorphous semiconductor film
JPS641234A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Plasma device
EP1518669A2 (en) * 2003-08-29 2005-03-30 Tadatomo Suga Method for bonding substrates and method for irradiating particle beam to be utilized therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212129A (en) * 1982-06-03 1983-12-09 Anelva Corp Manufacture of amorphous semiconductor film
JPS641234A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Plasma device
EP1518669A2 (en) * 2003-08-29 2005-03-30 Tadatomo Suga Method for bonding substrates and method for irradiating particle beam to be utilized therefor

Also Published As

Publication number Publication date
GB0708109D0 (en) 2007-06-06
GB0609167D0 (en) 2006-06-21
GB2458256A (en) 2009-09-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170426