GB0413664D0 - Distributed feedback laser - Google Patents

Distributed feedback laser

Info

Publication number
GB0413664D0
GB0413664D0 GB0413664A GB0413664A GB0413664D0 GB 0413664 D0 GB0413664 D0 GB 0413664D0 GB 0413664 A GB0413664 A GB 0413664A GB 0413664 A GB0413664 A GB 0413664A GB 0413664 D0 GB0413664 D0 GB 0413664D0
Authority
GB
United Kingdom
Prior art keywords
distributed feedback
feedback laser
laser
distributed
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0413664A
Other versions
GB2416427A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sheffield
Original Assignee
University of Sheffield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sheffield filed Critical University of Sheffield
Priority to GB0413664A priority Critical patent/GB2416427A/en
Publication of GB0413664D0 publication Critical patent/GB0413664D0/en
Priority to PCT/GB2005/002395 priority patent/WO2005124951A1/en
Publication of GB2416427A publication Critical patent/GB2416427A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H01S5/2045—Strongly index guided structures employing free standing waveguides or air gap confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB0413664A 2004-06-18 2004-06-18 DFB laser Withdrawn GB2416427A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0413664A GB2416427A (en) 2004-06-18 2004-06-18 DFB laser
PCT/GB2005/002395 WO2005124951A1 (en) 2004-06-18 2005-06-17 Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0413664A GB2416427A (en) 2004-06-18 2004-06-18 DFB laser

Publications (2)

Publication Number Publication Date
GB0413664D0 true GB0413664D0 (en) 2004-07-21
GB2416427A GB2416427A (en) 2006-01-25

Family

ID=32750162

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0413664A Withdrawn GB2416427A (en) 2004-06-18 2004-06-18 DFB laser

Country Status (2)

Country Link
GB (1) GB2416427A (en)
WO (1) WO2005124951A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243019A (en) 2006-03-10 2007-09-20 Fujitsu Ltd Optical semiconductor element
EP2064785B9 (en) * 2006-09-20 2017-11-08 The Provost, Fellows, Foundation Scholars, & the other members of Board, of the College of the Holy & Undiv. Trinity of Queen Elizabeth near Dublin Vernier tuned coupled cavity ld having a ridge with voids for longitudinal mode suppression
JP4817255B2 (en) * 2006-12-14 2011-11-16 富士通株式会社 Optical semiconductor device and manufacturing method thereof
DE102014106209B3 (en) * 2014-05-05 2015-08-27 Nanoplus Nanosystems And Technologies Gmbh Interband cascade laser and method for producing an inter-band cascade laser comprising a feedback element
JP6379696B2 (en) * 2014-06-05 2018-08-29 住友電気工業株式会社 Quantum cascade laser diode
JP6464895B2 (en) * 2015-04-03 2019-02-06 住友電気工業株式会社 Quantum cascade laser diode
JP6597037B2 (en) * 2015-08-06 2019-10-30 住友電気工業株式会社 Quantum cascade laser device
JP6485340B2 (en) * 2015-12-09 2019-03-20 住友電気工業株式会社 Method for fabricating quantum cascade laser, quantum cascade laser
CN106602404A (en) * 2016-12-30 2017-04-26 中国工程物理研究院应用电子学研究所 Semiconductor laser and manufacturing method thereof
WO2018218179A1 (en) 2017-05-26 2018-11-29 California Institute Of Technology Spectral filter having controllable spectral bandwidth and resolution
IT201700087052A1 (en) * 2017-07-28 2019-01-28 Prima Electro S P A PROCEDURE FOR MANUFACTURING A LASER SEMICONDUCTOR DIODE, AND LASER DIODE
CN108173116B (en) * 2018-02-07 2020-01-03 山东大学 Broadband tunable Moire grating laser and working method thereof
WO2020163492A1 (en) 2019-02-06 2020-08-13 California Institute Of Technology Compact hyperspectral mid-infrared spectrometer
CN111755949B (en) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 Preparation method of ridge GaAs-based laser with asymmetric injection window
WO2021092579A1 (en) 2019-11-08 2021-05-14 California Institute Of Technology Infrared spectrometer having dielectric-polymer-based spectral filter
EP3879642A1 (en) * 2020-03-13 2021-09-15 nanoplus Nanosystems and Technologies GmbH Single mode semiconductor laser with phase control
WO2022259349A1 (en) * 2021-06-08 2022-12-15 日本電信電話株式会社 Semiconductor laser
WO2022269848A1 (en) * 2021-06-24 2022-12-29 日本電信電話株式会社 Semiconductor laser
CN113866879B (en) * 2021-10-18 2024-04-30 联合微电子中心有限责任公司 Bragg grating-based reflector, manufacturing method thereof and photoelectric device
CN116387974B (en) * 2023-06-05 2023-12-29 福建慧芯激光科技有限公司 Preparation method of edge-emitting laser based on butt-joint growth process
CN118249202A (en) * 2024-03-26 2024-06-25 睿创光子(无锡)技术有限公司 Inter-band cascade laser and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362390A (en) * 1986-09-03 1988-03-18 Nec Corp Distributed feedback semiconductor laser
JPH0353575A (en) * 1989-07-21 1991-03-07 Canon Inc Wavelength stabilized semiconductor laser

Also Published As

Publication number Publication date
WO2005124951A1 (en) 2005-12-29
WO2005124951A8 (en) 2006-04-27
GB2416427A (en) 2006-01-25

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)