GB0026736D0 - Halo structure for use in reduced feature size transistor - Google Patents
Halo structure for use in reduced feature size transistorInfo
- Publication number
- GB0026736D0 GB0026736D0 GB0026736A GB0026736A GB0026736D0 GB 0026736 D0 GB0026736 D0 GB 0026736D0 GB 0026736 A GB0026736 A GB 0026736A GB 0026736 A GB0026736 A GB 0026736A GB 0026736 D0 GB0026736 D0 GB 0026736D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- feature size
- reduced feature
- size transistor
- halo structure
- halo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 125000001475 halogen functional group Chemical group 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16517999P | 1999-11-12 | 1999-11-12 | |
US47838700A | 2000-01-06 | 2000-01-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0026736D0 true GB0026736D0 (en) | 2000-12-20 |
GB2362030A GB2362030A (en) | 2001-11-07 |
Family
ID=26861172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0026736A Withdrawn GB2362030A (en) | 1999-11-12 | 2000-10-30 | Method of fabricating a halo structure in an integrated circuit for reduced size transistors |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2001168332A (en) |
KR (1) | KR20010051564A (en) |
GB (1) | GB2362030A (en) |
TW (1) | TW478167B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114038758A (en) * | 2022-01-07 | 2022-02-11 | 广州粤芯半导体技术有限公司 | Method for forming NMOS (N-channel metal oxide semiconductor) capable of improving hot carrier injection |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227321A (en) * | 1990-07-05 | 1993-07-13 | Micron Technology, Inc. | Method for forming MOS transistors |
US5894158A (en) * | 1991-09-30 | 1999-04-13 | Stmicroelectronics, Inc. | Having halo regions integrated circuit device structure |
KR940004711Y1 (en) * | 1992-07-06 | 1994-07-20 | 조길완 | Trouser |
EP0607658A3 (en) * | 1992-11-13 | 1995-08-30 | At & T Corp | MOSFET manufacture. |
US5504023A (en) * | 1995-01-27 | 1996-04-02 | United Microelectronics Corp. | Method for fabricating semiconductor devices with localized pocket implantation |
US5595919A (en) * | 1996-02-20 | 1997-01-21 | Chartered Semiconductor Manufacturing Pte Ltd. | Method of making self-aligned halo process for reducing junction capacitance |
US5936278A (en) * | 1996-03-13 | 1999-08-10 | Texas Instruments Incorporated | Semiconductor on silicon (SOI) transistor with a halo implant |
US5736446A (en) * | 1997-05-21 | 1998-04-07 | Powerchip Semiconductor Corp. | Method of fabricating a MOS device having a gate-side air-gap structure |
-
2000
- 2000-10-30 GB GB0026736A patent/GB2362030A/en not_active Withdrawn
- 2000-11-06 TW TW89123342A patent/TW478167B/en active
- 2000-11-09 KR KR1020000066398A patent/KR20010051564A/en not_active Application Discontinuation
- 2000-11-10 JP JP2000342866A patent/JP2001168332A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114038758A (en) * | 2022-01-07 | 2022-02-11 | 广州粤芯半导体技术有限公司 | Method for forming NMOS (N-channel metal oxide semiconductor) capable of improving hot carrier injection |
CN114038758B (en) * | 2022-01-07 | 2022-04-15 | 广州粤芯半导体技术有限公司 | Method for forming NMOS (N-channel metal oxide semiconductor) capable of improving hot carrier injection |
Also Published As
Publication number | Publication date |
---|---|
GB2362030A (en) | 2001-11-07 |
TW478167B (en) | 2002-03-01 |
JP2001168332A (en) | 2001-06-22 |
KR20010051564A (en) | 2001-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |