GB0013502D0 - CMOS static random access memory device - Google Patents

CMOS static random access memory device

Info

Publication number
GB0013502D0
GB0013502D0 GBGB0013502.0A GB0013502A GB0013502D0 GB 0013502 D0 GB0013502 D0 GB 0013502D0 GB 0013502 A GB0013502 A GB 0013502A GB 0013502 D0 GB0013502 D0 GB 0013502D0
Authority
GB
United Kingdom
Prior art keywords
memory device
random access
access memory
static random
cmos static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0013502.0A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19528328&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=GB0013502(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0013502D0 publication Critical patent/GB0013502D0/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
GBGB0013502.0A 1997-12-23 2000-06-02 CMOS static random access memory device Ceased GB0013502D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970072550A KR100305922B1 (en) 1997-12-23 1997-12-23 Cmos sram device

Publications (1)

Publication Number Publication Date
GB0013502D0 true GB0013502D0 (en) 2000-07-26

Family

ID=19528328

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9828575A Expired - Lifetime GB2332779B (en) 1997-12-23 1998-12-23 CMOS static random access memory device
GBGB0013502.0A Ceased GB0013502D0 (en) 1997-12-23 2000-06-02 CMOS static random access memory device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9828575A Expired - Lifetime GB2332779B (en) 1997-12-23 1998-12-23 CMOS static random access memory device

Country Status (7)

Country Link
US (1) US6147385A (en)
JP (1) JP3897916B2 (en)
KR (1) KR100305922B1 (en)
CN (1) CN1139130C (en)
DE (1) DE19832795B4 (en)
GB (2) GB2332779B (en)
TW (1) TW396619B (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3852729B2 (en) * 1998-10-27 2006-12-06 富士通株式会社 Semiconductor memory device
JP4565700B2 (en) * 1999-05-12 2010-10-20 ルネサスエレクトロニクス株式会社 Semiconductor device
JP4825999B2 (en) * 1999-05-14 2011-11-30 ソニー株式会社 Semiconductor memory device and manufacturing method thereof
JP2001007290A (en) * 1999-06-24 2001-01-12 Mitsubishi Electric Corp Semiconductor device, its manufacture, and communication method
JP3324587B2 (en) * 1999-12-20 2002-09-17 セイコーエプソン株式会社 Semiconductor storage device
JP3915861B2 (en) * 2000-01-14 2007-05-16 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof
JP3885860B2 (en) * 2000-01-14 2007-02-28 セイコーエプソン株式会社 Semiconductor memory device and manufacturing method thereof
JP3386038B2 (en) * 2000-06-22 2003-03-10 セイコーエプソン株式会社 Semiconductor storage device
JP3656592B2 (en) * 2001-03-26 2005-06-08 セイコーエプソン株式会社 Semiconductor device, memory system and electronic device
US6534805B1 (en) * 2001-04-09 2003-03-18 Cypress Semiconductor Corp. SRAM cell design
KR100456688B1 (en) * 2002-01-07 2004-11-10 삼성전자주식회사 Full CMOS SRAM cell
FR2843481B1 (en) * 2002-08-08 2005-09-16 Soisic MEMORY ON SUBSTRATE OF THE SILICON TYPE ON INSULATION
KR100583090B1 (en) * 2003-05-30 2006-05-23 주식회사 하이닉스반도체 Manufacturing method of capacitor of the ferroelectric register
US6924560B2 (en) * 2003-08-08 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Compact SRAM cell with FinFET
WO2006100641A2 (en) * 2005-03-24 2006-09-28 Koninklijke Philips Electronics N.V. Static random access memory cells with shared contacts
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
JP2007266377A (en) * 2006-03-29 2007-10-11 Fujitsu Ltd Semiconductor device
JP4653693B2 (en) * 2006-05-11 2011-03-16 パナソニック株式会社 Semiconductor memory device
CN100428476C (en) * 2006-07-10 2008-10-22 中芯国际集成电路制造(上海)有限公司 CMOS part
JP4466732B2 (en) 2007-12-11 2010-05-26 ソニー株式会社 Semiconductor memory device
JP4741027B2 (en) * 2010-05-07 2011-08-03 パナソニック株式会社 Semiconductor memory device
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
TWI698873B (en) 2017-03-28 2020-07-11 聯華電子股份有限公司 Semiconductor memory device
CN112864162B (en) * 2021-03-02 2022-07-19 长江存储科技有限责任公司 Page buffer, field effect transistor and three-dimensional memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0311734A (en) * 1989-06-09 1991-01-21 Miyazaki Oki Electric Co Ltd Semiconductor device
US5166902A (en) * 1991-03-18 1992-11-24 United Technologies Corporation SRAM memory cell
US5373170A (en) * 1993-03-15 1994-12-13 Motorola Inc. Semiconductor memory device having a compact symmetrical layout
JPH07130877A (en) * 1993-11-05 1995-05-19 Sony Corp Complete cmos type static memory cell
JPH07176633A (en) * 1993-12-20 1995-07-14 Nec Corp Cmos static memory
US5394358A (en) * 1994-03-28 1995-02-28 Vlsi Technology, Inc. SRAM memory cell with tri-level local interconnect
JPH08181225A (en) * 1994-10-28 1996-07-12 Nkk Corp Semiconductor storage device
JPH09260510A (en) * 1996-01-17 1997-10-03 Hitachi Ltd Semiconductor integrated circuit device and its manufacture

Also Published As

Publication number Publication date
KR100305922B1 (en) 2001-12-17
CN1139130C (en) 2004-02-18
GB2332779A (en) 1999-06-30
TW396619B (en) 2000-07-01
GB2332779B (en) 2000-10-25
DE19832795B4 (en) 2004-08-05
JPH11195716A (en) 1999-07-21
US6147385A (en) 2000-11-14
KR19990052990A (en) 1999-07-15
JP3897916B2 (en) 2007-03-28
DE19832795A1 (en) 1999-07-01
GB9828575D0 (en) 1999-02-17
CN1224243A (en) 1999-07-28

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)