GB2349274B - CMOS static random access memory device - Google Patents

CMOS static random access memory device

Info

Publication number
GB2349274B
GB2349274B GB0017733A GB0017733A GB2349274B GB 2349274 B GB2349274 B GB 2349274B GB 0017733 A GB0017733 A GB 0017733A GB 0017733 A GB0017733 A GB 0017733A GB 2349274 B GB2349274 B GB 2349274B
Authority
GB
United Kingdom
Prior art keywords
memory device
random access
access memory
static random
cmos static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0017733A
Other versions
GB2349274A (en
GB0017733D0 (en
Inventor
Jong-Mil Youn
Ki-Joon Kim
Sung-Bong Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970072550A external-priority patent/KR100305922B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0017733D0 publication Critical patent/GB0017733D0/en
Publication of GB2349274A publication Critical patent/GB2349274A/en
Application granted granted Critical
Publication of GB2349274B publication Critical patent/GB2349274B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
GB0017733A 1997-12-23 1998-12-23 CMOS static random access memory device Expired - Lifetime GB2349274B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970072550A KR100305922B1 (en) 1997-12-23 1997-12-23 Cmos sram device
GB9828575A GB2332779B (en) 1997-12-23 1998-12-23 CMOS static random access memory device

Publications (3)

Publication Number Publication Date
GB0017733D0 GB0017733D0 (en) 2000-09-06
GB2349274A GB2349274A (en) 2000-10-25
GB2349274B true GB2349274B (en) 2001-04-11

Family

ID=26314915

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0017733A Expired - Lifetime GB2349274B (en) 1997-12-23 1998-12-23 CMOS static random access memory device

Country Status (1)

Country Link
GB (1) GB2349274B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929990A (en) * 1987-07-01 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US5166902A (en) * 1991-03-18 1992-11-24 United Technologies Corporation SRAM memory cell
US5250831A (en) * 1990-03-28 1993-10-05 Mitsubishi Denki Kabushiki Kaisha DRAM device having a memory cell array of a divided bit line type
US5521860A (en) * 1993-12-20 1996-05-28 Nec Corporation CMOS static memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929990A (en) * 1987-07-01 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US5250831A (en) * 1990-03-28 1993-10-05 Mitsubishi Denki Kabushiki Kaisha DRAM device having a memory cell array of a divided bit line type
US5166902A (en) * 1991-03-18 1992-11-24 United Technologies Corporation SRAM memory cell
US5521860A (en) * 1993-12-20 1996-05-28 Nec Corporation CMOS static memory

Also Published As

Publication number Publication date
GB2349274A (en) 2000-10-25
GB0017733D0 (en) 2000-09-06

Similar Documents

Publication Publication Date Title
GB2332779B (en) CMOS static random access memory device
GB2310745B (en) Dynamic random access memory
EP0706186A3 (en) Dynamic random access memory devices
GB2332539A9 (en) Accessing random access memories
GB9722149D0 (en) Semiconductior memory devices
GB2317721B (en) Memory device
IL132418A0 (en) Memory access protection
EP0917153A4 (en) Semiconductor memory device
GB2317722B (en) Memory device
GB9606928D0 (en) Memory devices
IL121044A0 (en) Dynamic memory device
GB9620370D0 (en) Memory device
DE69834011D1 (en) Static random access memory circuits
GB9613088D0 (en) Memory device
GB2307075B (en) Dynamic random access memory
GB9609833D0 (en) Memory device
GB2254487B (en) Full CMOS type static random access memories
EP0642131A3 (en) Static random access memory device having reset controller.
GB9408901D0 (en) Serial access memory device
GB9308208D0 (en) Random access memory
GB2310062B (en) Memory device
GB2349274B (en) CMOS static random access memory device
GB9500944D0 (en) Static random access memories
GB9712287D0 (en) Dynamic random access memory
TW446194U (en) Dual-port random access memory device

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20181222