FR974510A - Contact à cristal - Google Patents

Contact à cristal

Info

Publication number
FR974510A
FR974510A FR974510DA FR974510A FR 974510 A FR974510 A FR 974510A FR 974510D A FR974510D A FR 974510DA FR 974510 A FR974510 A FR 974510A
Authority
FR
France
Prior art keywords
crystal contact
crystal
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Application granted granted Critical
Publication of FR974510A publication Critical patent/FR974510A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
FR974510D 1947-11-03 1948-11-03 Contact à cristal Expired FR974510A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2930447A GB635385A (en) 1947-11-03 1947-11-03 Improvements in or relating to methods of manufacturing crystal contact devices

Publications (1)

Publication Number Publication Date
FR974510A true FR974510A (fr) 1951-02-23

Family

ID=10289418

Family Applications (1)

Application Number Title Priority Date Filing Date
FR974510D Expired FR974510A (fr) 1947-11-03 1948-11-03 Contact à cristal

Country Status (3)

Country Link
FR (1) FR974510A (fr)
GB (1) GB635385A (fr)
NL (2) NL89591C (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL164481B (nl) * 1950-10-06 Dow Chemical Co Werkwijze voor het vervaardigen van een selectief permeabel membraanelement en inrichting ten gebruike bij de vervaardiging daarvan.
GB697536A (en) * 1951-05-03 1953-09-23 Gen Electric Co Ltd Improvements in or relating to the manufacture of crystal contact devices
DE1014233B (de) * 1952-08-27 1957-08-22 Philips Nv Halbleiteranordnung mit Spitzen-elektroden und mit einem eifoermigen halbleitenden Koerper
US2864139A (en) * 1953-05-19 1958-12-16 Texas Instruments Inc Method and apparatus for producing intermediate semi-conductor product
DE1084840B (de) * 1957-01-23 1960-07-07 Intermetall Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren
DE1171991B (de) * 1962-01-10 1964-06-11 Masamichi Enomoto Verfahren zur Herstellung von Halbleiterkoerpern fuer Halbleiterbauelemente

Also Published As

Publication number Publication date
GB635385A (en) 1950-04-05
NL143116C (fr)
NL89591C (fr)

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