FR832708A - Improvements in the fabrication of asymmetric conductivity devices - Google Patents

Improvements in the fabrication of asymmetric conductivity devices

Info

Publication number
FR832708A
FR832708A FR832708DA FR832708A FR 832708 A FR832708 A FR 832708A FR 832708D A FR832708D A FR 832708DA FR 832708 A FR832708 A FR 832708A
Authority
FR
France
Prior art keywords
fabrication
conductivity devices
asymmetric conductivity
asymmetric
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Application granted granted Critical
Publication of FR832708A publication Critical patent/FR832708A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
FR832708D 1937-02-08 1938-01-27 Improvements in the fabrication of asymmetric conductivity devices Expired FR832708A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3718/37A GB491785A (en) 1937-02-08 1937-02-08 Improvements relating to the manufacture of alternating electric current rectifiers

Publications (1)

Publication Number Publication Date
FR832708A true FR832708A (en) 1938-10-03

Family

ID=9763650

Family Applications (2)

Application Number Title Priority Date Filing Date
FR832708D Expired FR832708A (en) 1937-02-08 1938-01-27 Improvements in the fabrication of asymmetric conductivity devices
FR49946D Expired FR49946E (en) 1937-02-08 1938-11-16 Improvements in the fabrication of asymmetric conductivity devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR49946D Expired FR49946E (en) 1937-02-08 1938-11-16 Improvements in the fabrication of asymmetric conductivity devices

Country Status (5)

Country Link
US (1) US2201709A (en)
DE (2) DE857527C (en)
FR (2) FR832708A (en)
GB (1) GB491785A (en)
NL (1) NL54236C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2508161A (en) * 1945-11-13 1950-05-16 Westinghouse Electric Corp Rectifier element
US5814164A (en) * 1994-11-09 1998-09-29 American Scientific Materials Technologies L.P. Thin-walled, monolithic iron oxide structures made from steels, and methods for manufacturing such structures
US6045628A (en) * 1996-04-30 2000-04-04 American Scientific Materials Technologies, L.P. Thin-walled monolithic metal oxide structures made from metals, and methods for manufacturing such structures
US6461562B1 (en) 1999-02-17 2002-10-08 American Scientific Materials Technologies, Lp Methods of making sintered metal oxide articles

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT111459B (en) * 1925-03-28 1928-11-26 Westinghouse Brake & Signal Method of manufacturing a rectifier.
US1936792A (en) * 1929-02-06 1933-11-28 Westinghouse Electric & Mfg Co Method of making copper oxide rectifiers for high voltage application
US1820166A (en) * 1930-06-18 1931-08-25 Union Switch & Signal Co Copper oxide rectifier

Also Published As

Publication number Publication date
FR49946E (en) 1939-09-22
DE763878C (en) 1952-10-06
US2201709A (en) 1940-05-21
DE857527C (en) 1952-12-01
NL54236C (en) 1943-04-15
GB491785A (en) 1938-09-08

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