FR3144397B1 - Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation - Google Patents

Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation Download PDF

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Publication number
FR3144397B1
FR3144397B1 FR2214234A FR2214234A FR3144397B1 FR 3144397 B1 FR3144397 B1 FR 3144397B1 FR 2214234 A FR2214234 A FR 2214234A FR 2214234 A FR2214234 A FR 2214234A FR 3144397 B1 FR3144397 B1 FR 3144397B1
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FR
France
Prior art keywords
deposition method
radiation detection
multilayer device
lower electrode
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2214234A
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English (en)
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FR3144397A1 (fr
Inventor
Louis Grenet
Christelle Anglade
Ferdinand Ledee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2214234A priority Critical patent/FR3144397B1/fr
Priority to PCT/EP2023/086565 priority patent/WO2024133214A1/fr
Publication of FR3144397A1 publication Critical patent/FR3144397A1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation

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  • Light Receiving Elements (AREA)

Abstract

L’invention concerne Structure photodétectrice comprenant : une structure planaire d’absorption pour convertir un rayon incident en des porteurs de charges électriques photogénérées ; une électrode inférieure pour collecter les porteurs de charges électriques photo générées ;une électrode supérieure ; ladite structure planaire d’absorption étant confinée entre l’électrode inférieure et l’électrode supérieure et comprenant : une couche d’absorption en un premier matériau composé ABX3 ; une couche d’interface en un second matériau composé AB2X5 disposée entre d’une part la couche d’absorption et d’autre part l’électrode supérieure ou l’électrode inférieure; Figure pour l’abrégé : Fig. 2a
FR2214234A 2022-12-22 2022-12-22 Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation Active FR3144397B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2214234A FR3144397B1 (fr) 2022-12-22 2022-12-22 Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation
PCT/EP2023/086565 WO2024133214A1 (fr) 2022-12-22 2023-12-19 Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2214234 2022-12-22
FR2214234A FR3144397B1 (fr) 2022-12-22 2022-12-22 Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation

Publications (2)

Publication Number Publication Date
FR3144397A1 FR3144397A1 (fr) 2024-06-28
FR3144397B1 true FR3144397B1 (fr) 2025-06-20

Family

ID=86852015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2214234A Active FR3144397B1 (fr) 2022-12-22 2022-12-22 Dispositif à multicouche pour la détection des rayonnements et procédé de dépôt par sublimation

Country Status (2)

Country Link
FR (1) FR3144397B1 (fr)
WO (1) WO2024133214A1 (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3111919B1 (fr) * 2020-06-30 2022-08-26 Commissariat Energie Atomique Procede de depot d’une couche de perovskite inorganique

Also Published As

Publication number Publication date
WO2024133214A1 (fr) 2024-06-27
FR3144397A1 (fr) 2024-06-28

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