FR3114882B1 - Circuit de test - Google Patents

Circuit de test Download PDF

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Publication number
FR3114882B1
FR3114882B1 FR2010070A FR2010070A FR3114882B1 FR 3114882 B1 FR3114882 B1 FR 3114882B1 FR 2010070 A FR2010070 A FR 2010070A FR 2010070 A FR2010070 A FR 2010070A FR 3114882 B1 FR3114882 B1 FR 3114882B1
Authority
FR
France
Prior art keywords
circuit
test circuit
test
data signal
input data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2010070A
Other languages
English (en)
Other versions
FR3114882A1 (fr
Inventor
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR2010070A priority Critical patent/FR3114882B1/fr
Priority to US17/468,377 priority patent/US11815547B2/en
Priority to CN202111162449.4A priority patent/CN114373692A/zh
Publication of FR3114882A1 publication Critical patent/FR3114882A1/fr
Application granted granted Critical
Publication of FR3114882B1 publication Critical patent/FR3114882B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06766—Input circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Circuit de test La présente description concerne un circuit intégré (20) comprenant un circuit de test (24) comprenant : - une piste conductrice (241) s'étendant sur au moins une partie de la périphérie dudit circuit intégré (20) ; - au moins un composant (23) ; et - un circuit d'activation (243) adapté à dévier un signal de données d'entrée (DT1) dans ladite piste conductrice (241) pendant un mode de test, et à transmettre le signal de données d'entrée (DT1) audit au moins un composant (23) pendant un mode normal de fonctionnement. Figure pour l'abrégé : Fig. 2
FR2010070A 2020-10-01 2020-10-01 Circuit de test Active FR3114882B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2010070A FR3114882B1 (fr) 2020-10-01 2020-10-01 Circuit de test
US17/468,377 US11815547B2 (en) 2020-10-01 2021-09-07 Test circuit
CN202111162449.4A CN114373692A (zh) 2020-10-01 2021-09-30 测试电路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2010070A FR3114882B1 (fr) 2020-10-01 2020-10-01 Circuit de test
FR2010070 2020-10-01

Publications (2)

Publication Number Publication Date
FR3114882A1 FR3114882A1 (fr) 2022-04-08
FR3114882B1 true FR3114882B1 (fr) 2023-05-12

Family

ID=73643106

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2010070A Active FR3114882B1 (fr) 2020-10-01 2020-10-01 Circuit de test

Country Status (3)

Country Link
US (1) US11815547B2 (fr)
CN (1) CN114373692A (fr)
FR (1) FR3114882B1 (fr)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801869A (en) 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US6124143A (en) * 1998-01-26 2000-09-26 Lsi Logic Corporation Process monitor circuitry for integrated circuits
US6163867A (en) 1998-08-28 2000-12-19 Hewlett-Packard Company Input-output pad testing using bi-directional pads
US6449748B1 (en) 1999-08-09 2002-09-10 Lsi Logic Corporation Non-destructive method of detecting die crack problems
US6621280B1 (en) 2000-06-27 2003-09-16 Agere Systems Inc. Method of testing an integrated circuit
JP2006038988A (ja) 2004-07-23 2006-02-09 Seiko Epson Corp 電気光学装置、電子機器、および実装構造体
KR100750192B1 (ko) * 2006-05-04 2007-08-17 삼성전자주식회사 크랙 검사 회로를 갖는 반도체 칩 및 이를 이용한 크랙검사 방법
JP4370343B2 (ja) * 2006-07-07 2009-11-25 シャープ株式会社 不具合検出機能を備えた半導体装置
EP1892535A1 (fr) 2006-08-25 2008-02-27 Stmicroelectronics Sa Procédé de test électrique d' un circuit intégré
JP2010118408A (ja) * 2008-11-11 2010-05-27 Nec Electronics Corp 半導体装置、半導体装置の試験方法
JP2012007978A (ja) * 2010-06-24 2012-01-12 On Semiconductor Trading Ltd 半導体集積回路
ITMI20111418A1 (it) * 2011-07-28 2013-01-29 St Microelectronics Srl Architettura di testing di circuiti integrati su un wafer
CN107728042B (zh) * 2017-11-13 2023-08-22 长鑫存储技术有限公司 具有保护测试的集成电路及其测试方法

Also Published As

Publication number Publication date
FR3114882A1 (fr) 2022-04-08
CN114373692A (zh) 2022-04-19
US11815547B2 (en) 2023-11-14
US20220107356A1 (en) 2022-04-07

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