FR3111019B1 - Capteur optique intégré à photodiodes pincées - Google Patents

Capteur optique intégré à photodiodes pincées Download PDF

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Publication number
FR3111019B1
FR3111019B1 FR2005537A FR2005537A FR3111019B1 FR 3111019 B1 FR3111019 B1 FR 3111019B1 FR 2005537 A FR2005537 A FR 2005537A FR 2005537 A FR2005537 A FR 2005537A FR 3111019 B1 FR3111019 B1 FR 3111019B1
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FR
France
Prior art keywords
optical sensor
pinched
integrated optical
photodiodes
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2005537A
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English (en)
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FR3111019A1 (fr
Inventor
Didier Dutartre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2005537A priority Critical patent/FR3111019B1/fr
Priority to US17/324,619 priority patent/US11757054B2/en
Priority to CN202121129725.2U priority patent/CN218896638U/zh
Priority to CN202110570140.2A priority patent/CN113725242A/zh
Publication of FR3111019A1 publication Critical patent/FR3111019A1/fr
Application granted granted Critical
Publication of FR3111019B1 publication Critical patent/FR3111019B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1037—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIVBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)

Abstract

Capteur optique intégré, comprenant au moins un module de détection (MD) comportant une photodiode pincée (PPD) comportant au sein d’un substrat semiconducteur, une première région semiconductrice (RG1) ayant un premier type de conductivité située entre une deuxième région semiconductrice (RG2) ayant un deuxième type de conductivité opposé au premier et une troisième région semiconductrice (RG3) ayant le deuxième type de conductivité, plus épaisse, moins dopée et située plus en profondeur dans le substrat que la deuxième région (RG2), et comportant du silicium et du germanium présentant au moins un premier gradient de concentration (GR1 ; GR10). Figure pour l’abrégé : Fig 1
FR2005537A 2020-05-26 2020-05-26 Capteur optique intégré à photodiodes pincées Active FR3111019B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2005537A FR3111019B1 (fr) 2020-05-26 2020-05-26 Capteur optique intégré à photodiodes pincées
US17/324,619 US11757054B2 (en) 2020-05-26 2021-05-19 Integrated optical sensor with pinned photodiodes
CN202121129725.2U CN218896638U (zh) 2020-05-26 2021-05-25 集成光学传感器、成像系统以及电子设备
CN202110570140.2A CN113725242A (zh) 2020-05-26 2021-05-25 具有钉扎光电二极管的集成光学传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2005537 2020-05-26
FR2005537A FR3111019B1 (fr) 2020-05-26 2020-05-26 Capteur optique intégré à photodiodes pincées

Publications (2)

Publication Number Publication Date
FR3111019A1 FR3111019A1 (fr) 2021-12-03
FR3111019B1 true FR3111019B1 (fr) 2022-07-22

Family

ID=73138879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2005537A Active FR3111019B1 (fr) 2020-05-26 2020-05-26 Capteur optique intégré à photodiodes pincées

Country Status (2)

Country Link
US (1) US11757054B2 (fr)
FR (1) FR3111019B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164182B2 (en) * 2003-07-07 2007-01-16 Micron Technology, Inc. Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
US20060157806A1 (en) * 2005-01-18 2006-07-20 Omnivision Technologies, Inc. Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
US20110240121A1 (en) * 2010-04-02 2011-10-06 Iowa State University Research Foundation, Inc. Nanocrystalline Superlattice Solar Cell
WO2019089437A1 (fr) 2017-10-30 2019-05-09 W&wsens Devices Inc. Dispositifs photosensibles d'absorption à microstructure améliorée
US9153717B2 (en) * 2013-08-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated photo-sensitive device with gradated buffer layer
US9368543B2 (en) * 2014-01-15 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device
GB201421512D0 (en) * 2014-12-03 2015-01-14 Melexis Technologies Nv A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same
TWI767411B (zh) 2015-07-24 2022-06-11 光程研創股份有限公司 半導體結構
US9911770B2 (en) * 2016-05-31 2018-03-06 Omnivision Technologies, Inc. Graded-semiconductor image sensor
US11335821B2 (en) * 2020-04-30 2022-05-17 Omnivision Technologies, Inc. Low noise silicon germanium image sensor

Also Published As

Publication number Publication date
FR3111019A1 (fr) 2021-12-03
US11757054B2 (en) 2023-09-12
US20210376170A1 (en) 2021-12-02

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