FR3110261B1 - METHOD AND SYSTEM FOR TESTING AN INTEGRATED CIRCUIT - Google Patents
METHOD AND SYSTEM FOR TESTING AN INTEGRATED CIRCUIT Download PDFInfo
- Publication number
- FR3110261B1 FR3110261B1 FR2004947A FR2004947A FR3110261B1 FR 3110261 B1 FR3110261 B1 FR 3110261B1 FR 2004947 A FR2004947 A FR 2004947A FR 2004947 A FR2004947 A FR 2004947A FR 3110261 B1 FR3110261 B1 FR 3110261B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- rewritable memory
- testing
- logic
- flops
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 230000006870 function Effects 0.000 abstract 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/32—Serial access; Scan testing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C29/56012—Timing aspects, clock generation, synchronisation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0403—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals during or with feedback to manufacture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C2029/1802—Address decoder
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C2029/3202—Scan chain
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5602—Interface to device under test
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5606—Error catch memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/003—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation in serial memories
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/46—Test trigger logic
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
L’invention concerne un procédé et un système de test d’un circuit intégré comportant des portes logiques, des bascules logiques et une mémoire réinscriptible, le circuit intégré comportant une horloge interne, le circuit intégré étant configurable dans un mode de fonctionnement dit mode chaîne de balayage. Selon l’invention : - on met le circuit intégré dans le mode chaîne de balayage, - on isole avec des moyens d’isolement la mémoire réinscriptible des portes logiques des bascules logiques, - on cadence (Clk) les moyens d’isolement par une horloge externe, - on varie la périodicité de l’horloge externe, - on lit (300) le contenu de la mémoire réinscriptible et on le compare à une valeur, - on détermine (300) le temps d’accès de la mémoire réinscriptible en fonction de la comparaison. Fig. 3The invention relates to a method and a system for testing an integrated circuit comprising logic gates, logic flip-flops and a rewritable memory, the integrated circuit comprising an internal clock, the integrated circuit being configurable in an operating mode called chain mode sweep. According to the invention: - the integrated circuit is placed in scan chain mode, - the rewritable memory of the logic gates of the logic flip-flops is isolated with isolation means, - the isolation means are clocked (Clk) by a external clock, - the periodicity of the external clock is varied, - the content of the rewritable memory is read (300) and it is compared with a value, - the access time of the rewritable memory is determined (300) by comparison function. Fig. 3
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2004947A FR3110261B1 (en) | 2020-05-18 | 2020-05-18 | METHOD AND SYSTEM FOR TESTING AN INTEGRATED CIRCUIT |
TW110117474A TWI797622B (en) | 2020-05-18 | 2021-05-14 | Method and system for testing an integrated circuit |
CN202110529993.1A CN113687208A (en) | 2020-05-18 | 2021-05-14 | Method and system for testing integrated circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2004947A FR3110261B1 (en) | 2020-05-18 | 2020-05-18 | METHOD AND SYSTEM FOR TESTING AN INTEGRATED CIRCUIT |
FR2004947 | 2020-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3110261A1 FR3110261A1 (en) | 2021-11-19 |
FR3110261B1 true FR3110261B1 (en) | 2022-04-29 |
Family
ID=72560696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2004947A Active FR3110261B1 (en) | 2020-05-18 | 2020-05-18 | METHOD AND SYSTEM FOR TESTING AN INTEGRATED CIRCUIT |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN113687208A (en) |
FR (1) | FR3110261B1 (en) |
TW (1) | TWI797622B (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4878209A (en) * | 1988-03-17 | 1989-10-31 | International Business Machines Corporation | Macro performance test |
JP2003100100A (en) * | 2001-07-19 | 2003-04-04 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US7103814B2 (en) * | 2002-10-25 | 2006-09-05 | International Business Machines Corporation | Testing logic and embedded memory in parallel |
DE602004007349T2 (en) * | 2004-01-15 | 2008-03-13 | Infineon Technologies Ag | Device for determining the access time and / or the minimum cycle time of a memory |
JP4707053B2 (en) * | 2005-06-06 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit device |
TWI609190B (en) * | 2016-08-05 | 2017-12-21 | 國立成功大學 | Automatic-test architecture of integrated circuit capable of storing test data in scan chains and method thereof |
-
2020
- 2020-05-18 FR FR2004947A patent/FR3110261B1/en active Active
-
2021
- 2021-05-14 TW TW110117474A patent/TWI797622B/en active
- 2021-05-14 CN CN202110529993.1A patent/CN113687208A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW202147112A (en) | 2021-12-16 |
TWI797622B (en) | 2023-04-01 |
CN113687208A (en) | 2021-11-23 |
FR3110261A1 (en) | 2021-11-19 |
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