FR3105826A1 - Capteur de basse pression avec nervures de raidissement - Google Patents
Capteur de basse pression avec nervures de raidissement Download PDFInfo
- Publication number
- FR3105826A1 FR3105826A1 FR2014192A FR2014192A FR3105826A1 FR 3105826 A1 FR3105826 A1 FR 3105826A1 FR 2014192 A FR2014192 A FR 2014192A FR 2014192 A FR2014192 A FR 2014192A FR 3105826 A1 FR3105826 A1 FR 3105826A1
- Authority
- FR
- France
- Prior art keywords
- membrane
- silicon
- layer
- etched
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 239000012528 membrane Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0047—Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Des capteurs de pression MEMS à semi-conducteur (100) peuvent produire un signal de sortie linéaire et important lorsqu'ils sont soumis à une petite pression, sans une augmentation de l'erreur d'échelle avant-arrière. Un exemple peut subir des déformations importantes sans provoquer une détérioration catastrophique de la membrane. Le capteur de pression (100) peut inclure une couche de silicium (600) ayant des surfaces opposées, un motif gravé dans l’une des surfaces de la couche de silicium (600), et une cavité gravée (720) sur la surface opposée de la couche de silicium (600) pour former une membrane (400). Le motif gravé peut inclure une série de nervures de raidissement concentriques (520, 530, 540), un bossage inversé (510), de grandes zones d'enfoncement (640) à proximité du bord de la membrane (400) et/ou du bossage (510), et des concentrateurs de contrainte piézorésistifs (650). Les nervures (520, 530, 540) et les enfoncements (610, 640) peuvent être formés sur la membrane de silicium (400) par des techniques de gravure anisotrope ou isotrope. Des dispositifs piézorésistifs (310) peuvent être diffusés dans la membrane (400), dans les régions à proximité des concentrateurs de contrainte (650) pour former un pont de Wheatstone ou une autre structure de mesure. Figure pour l’abrégé: Figure 1
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/729,442 US11473991B2 (en) | 2019-12-29 | 2019-12-29 | Low-pressure sensor with stiffening ribs |
US16/729,442 | 2019-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3105826A1 true FR3105826A1 (fr) | 2021-07-02 |
FR3105826B1 FR3105826B1 (fr) | 2023-07-21 |
Family
ID=76547333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2014192A Active FR3105826B1 (fr) | 2019-12-29 | 2020-12-28 | Capteur de basse pression avec nervures de raidissement |
Country Status (2)
Country | Link |
---|---|
US (1) | US11473991B2 (fr) |
FR (1) | FR3105826B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115265854A (zh) * | 2022-07-27 | 2022-11-01 | 南京高华科技股份有限公司 | 一种压力传感器及其制备方法 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4467656A (en) | 1983-03-07 | 1984-08-28 | Kulite Semiconductor Products, Inc. | Transducer apparatus employing convoluted semiconductor diaphragms |
US5002901A (en) | 1986-05-07 | 1991-03-26 | Kulite Semiconductor Products, Inc. | Method of making integral transducer structures employing high conductivity surface features |
US5177579A (en) | 1989-04-07 | 1993-01-05 | Ic Sensors, Inc. | Semiconductor transducer or actuator utilizing corrugated supports |
US5165289A (en) | 1990-07-10 | 1992-11-24 | Johnson Service Company | Resonant mechanical sensor |
US5891751A (en) | 1995-06-02 | 1999-04-06 | Kulite Semiconductor Products, Inc . | Hermetically sealed transducers and methods for producing the same |
US5614678A (en) | 1996-02-05 | 1997-03-25 | Kulite Semiconductor Products, Inc. | High pressure piezoresistive transducer |
JPH09329516A (ja) | 1996-06-06 | 1997-12-22 | Hitachi Ltd | 半導体圧力センサ及びこれを用いた複合伝送器 |
US6168906B1 (en) * | 1998-05-26 | 2001-01-02 | The Charles Stark Draper Laboratory, Inc. | Micromachined membrane with locally compliant and stiff regions and method of making same |
US6093579A (en) | 1998-06-01 | 2000-07-25 | Exar Corporation | Low pressure sensor with a thin boss and method of manufacture |
US6006607A (en) | 1998-08-31 | 1999-12-28 | Maxim Integrated Products, Inc. | Piezoresistive pressure sensor with sculpted diaphragm |
DE10114036A1 (de) * | 2001-03-22 | 2002-10-02 | Bosch Gmbh Robert | Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren |
US6912759B2 (en) | 2001-07-20 | 2005-07-05 | Rosemount Aerospace Inc. | Method of manufacturing a thin piezo resistive pressure sensor |
US6588281B2 (en) | 2001-10-24 | 2003-07-08 | Kulite Semiconductor Products, Inc. | Double stop structure for a pressure transducer |
US6823744B2 (en) * | 2002-01-11 | 2004-11-30 | Honda Giken Kogyo Kabushiki Kaisha | Six-axis force sensor |
JP2005024485A (ja) | 2003-07-02 | 2005-01-27 | Techno Excel Co Ltd | 圧力センサ |
US7111518B1 (en) | 2003-09-19 | 2006-09-26 | Silicon Microstructures, Inc. | Extremely low cost pressure sensor realized using deep reactive ion etching |
US7367232B2 (en) | 2004-01-24 | 2008-05-06 | Vladimir Vaganov | System and method for a three-axis MEMS accelerometer |
US6988412B1 (en) | 2004-11-30 | 2006-01-24 | Endevco Corporation | Piezoresistive strain concentrator |
JP4617943B2 (ja) * | 2005-03-18 | 2011-01-26 | 株式会社日立製作所 | 力学量測定装置 |
US7318349B2 (en) | 2005-06-04 | 2008-01-15 | Vladimir Vaganov | Three-axis integrated MEMS accelerometer |
US7615834B2 (en) | 2006-02-28 | 2009-11-10 | The Board Of Trustees Of The Leland Stanford Junior University | Capacitive micromachined ultrasonic transducer(CMUT) with varying thickness membrane |
FR2901264B1 (fr) * | 2006-05-22 | 2008-10-10 | Commissariat Energie Atomique | Microcomposant muni d'une cavite delimitee par un capot a resistance mecanique amelioree |
US7487681B1 (en) | 2006-08-06 | 2009-02-10 | Silicon Microstructures Inc. | Pressure sensor adjustment using backside mask |
US7997142B2 (en) | 2009-07-31 | 2011-08-16 | Continental Automotive Systems, Inc. | Low pressure sensor device with high accuracy and high sensitivity |
US8381596B2 (en) | 2009-12-21 | 2013-02-26 | Silicon Microstructures, Inc. | CMOS compatible pressure sensor for low pressures |
CN102742012B (zh) | 2010-01-11 | 2015-08-12 | 艾尔默斯半导体股份公司 | 半导体传感器部件 |
FR2955443B1 (fr) * | 2010-01-19 | 2012-03-23 | Univ Maine | Structure de haut-parleur electrodynamique a technologie mems |
EP2550234B1 (fr) * | 2010-03-22 | 2019-12-11 | Elmos Semiconductor Aktiengesellschaft | Procédé de fabrication d'un dispositif microélectromécanique et dispositif microélectromécanique |
WO2011117105A2 (fr) | 2010-03-26 | 2011-09-29 | Elmos Semiconductor Ag | Dispositif microélectromécanique et son utilisation |
US9409763B2 (en) * | 2012-04-04 | 2016-08-09 | Infineon Technologies Ag | MEMS device and method of making a MEMS device |
US9581511B2 (en) * | 2013-10-15 | 2017-02-28 | Meggitt (Orange County), Inc. | Microelectromechanical pressure sensors |
WO2015111581A1 (fr) | 2014-01-24 | 2015-07-30 | 国立大学法人 東京大学 | Capteur |
GB201412246D0 (en) * | 2014-05-15 | 2014-08-20 | Continental Automotive Systems | Pressure sensor device with high sensitivity and high accuracy |
US9821340B2 (en) * | 2014-07-28 | 2017-11-21 | Kolo Medical Ltd. | High displacement ultrasonic transducer |
DE102015213774A1 (de) * | 2015-07-22 | 2017-01-26 | Robert Bosch Gmbh | MEMS-Bauelement mit schalldruckempfindlichem Membranelement und piezosensitiver Signalerfassung |
US9745188B1 (en) * | 2016-02-26 | 2017-08-29 | Infineon Technologies Ag | Microelectromechanical device and method for forming a microelectromechanical device |
CN109708786A (zh) | 2018-12-07 | 2019-05-03 | 苏州长风航空电子有限公司 | 一种双重应力集中结构微压传感器芯体及制备方法 |
US11051106B2 (en) * | 2019-04-29 | 2021-06-29 | Fortemedia, Inc. | Movable embedded microstructure |
-
2019
- 2019-12-29 US US16/729,442 patent/US11473991B2/en active Active
-
2020
- 2020-12-28 FR FR2014192A patent/FR3105826B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR3105826B1 (fr) | 2023-07-21 |
US11473991B2 (en) | 2022-10-18 |
US20210199527A1 (en) | 2021-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20200024126A1 (en) | Miniaturized and ruggedized wafer level mems force sensors | |
US9764947B2 (en) | Piezoresistive pressure sensor device | |
Andreev et al. | Silicon pressure transmitters with overload protection | |
US9651441B2 (en) | Pressure sensor device with high sensitivity and high accuracy | |
Basov et al. | Investigation of high-sensitivity piezoresistive pressure sensors at ultra-low differential pressures | |
CN106644195B (zh) | 一种高温大量程硅-蓝宝石压力传感器结构 | |
CN104729784A (zh) | 一种梁槽结合台阶式岛膜微压传感器芯片及制备方法 | |
US9927455B2 (en) | MEMS chip for wind speed measurements | |
FR3105826B1 (fr) | Capteur de basse pression avec nervures de raidissement | |
CN110542498A (zh) | 一种mems应变式差分式压力传感器及制作方法 | |
US20180024021A1 (en) | Micro mechanical devices with an improved recess or cavity structure | |
CN215448264U (zh) | 一种复合膜片式的mems压力传感器 | |
US20140137653A1 (en) | Piezoresistive transducer with low thermal noise | |
CN203191141U (zh) | 用于测量气体与液体压力的硅压阻式mems压力传感器 | |
RU2469437C1 (ru) | Интегральный преобразователь давления с одним жестким центром | |
Yu et al. | A MEMS pressure sensor based on Hall effect | |
Roy et al. | A simulation based geometrical analysis of MEMS capacitive pressure sensors for high absolute pressure measurement | |
CN109238523B (zh) | 一种测量晶圆残余应力的装置及其方法 | |
Suja et al. | Design and simulation of pressure sensor for ocean depth measurements | |
RU2559300C2 (ru) | Датчик давления | |
CN208568143U (zh) | 一种基于金刚石薄膜的海水压力传感器 | |
CN208537079U (zh) | 基于金刚石薄膜的快速响应的海水压力传感器 | |
Tsai et al. | Design and characterization of temperature-robust piezoresistive micro-pressure sensor with double-wheatstone-bridge structure | |
CN112798169A (zh) | 一种具有抗高过载能力的高压传感器 | |
Angel et al. | Sensitivity enhancement by striped arrow embossed diaphragms in low pressure MEMS piezoresistive pressure sensors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
TP | Transmission of property |
Owner name: MEASUREMENT SPECIALTIES, INC., US Effective date: 20220323 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20220603 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |