FR3091299B1 - Procédé de formation d’un film de diamant hétéroépitaxié sur un substrat en iridium monocristallin - Google Patents

Procédé de formation d’un film de diamant hétéroépitaxié sur un substrat en iridium monocristallin Download PDF

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Publication number
FR3091299B1
FR3091299B1 FR1874359A FR1874359A FR3091299B1 FR 3091299 B1 FR3091299 B1 FR 3091299B1 FR 1874359 A FR1874359 A FR 1874359A FR 1874359 A FR1874359 A FR 1874359A FR 3091299 B1 FR3091299 B1 FR 3091299B1
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France
Prior art keywords
single crystal
nanocrystals
iridium
diamond
mask
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Active
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FR1874359A
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English (en)
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FR3091299A1 (fr
Inventor
Julien Delchevalrie
Jean-Charles Arnault
Samuel Saada
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1874359A priority Critical patent/FR3091299B1/fr
Priority to JP2021537852A priority patent/JP2022515495A/ja
Priority to DE112019006540.8T priority patent/DE112019006540T5/de
Priority to PCT/FR2019/053160 priority patent/WO2020136326A1/fr
Publication of FR3091299A1 publication Critical patent/FR3091299A1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L’invention concerne un procédé de formation d’un film de diamant hétéroépitaxié sur un support en iridium monocristallin, comprenant : a) la fourniture du support, qui comprend au moins une surface en iridium monocristallin ; b) la formation de nanocristaux de diamant sur la surface en iridium monocristallin par polarisation assistée par plasma ; c) la formation du film en diamant hétéroépitaxié sur la surface en iridium monocristallin par croissance de diamant à partir des nanocristaux formés à l’étape b), la croissance du diamant étant réalisée par dépôt chimique en phase vapeur assisté par plasma dans des conditions permettant la coalescences des nanocristaux. Le procédé est caractérisé en ce que l’étape b) est une formation localisée de nanocristaux de diamant, comprenant les opérations successives suivantes : i) la formation d’un masque en iridium polycristallin sur la surface en iridium monocristallin, le masque laissant au moins une zone de la surface non recouverte ; ii) la nucléation, par polarisation assistée par plasma, de la surface équipée du masque, les nanocristaux apparaissant dans ladite au moins une zone de la surface non recouverte par le masque. Figure pour l’abrégé : aucune figure
FR1874359A 2018-12-28 2018-12-28 Procédé de formation d’un film de diamant hétéroépitaxié sur un substrat en iridium monocristallin Active FR3091299B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1874359A FR3091299B1 (fr) 2018-12-28 2018-12-28 Procédé de formation d’un film de diamant hétéroépitaxié sur un substrat en iridium monocristallin
JP2021537852A JP2022515495A (ja) 2018-12-28 2019-12-18 単結晶イリジウム基板でのヘテロエピタキシャルダイヤモンド膜の形成方法
DE112019006540.8T DE112019006540T5 (de) 2018-12-28 2019-12-18 Verfahren zum bilden eines heteroepitaktischen diamantfilms auf einem monokristallinen iridiumsubstrat
PCT/FR2019/053160 WO2020136326A1 (fr) 2018-12-28 2019-12-18 Procédé de formation d'un film de diamant hétéroepitaxié sur un substrat en iridium monocristallin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1874359A FR3091299B1 (fr) 2018-12-28 2018-12-28 Procédé de formation d’un film de diamant hétéroépitaxié sur un substrat en iridium monocristallin

Publications (2)

Publication Number Publication Date
FR3091299A1 FR3091299A1 (fr) 2020-07-03
FR3091299B1 true FR3091299B1 (fr) 2021-01-29

Family

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FR1874359A Active FR3091299B1 (fr) 2018-12-28 2018-12-28 Procédé de formation d’un film de diamant hétéroépitaxié sur un substrat en iridium monocristallin

Country Status (4)

Country Link
JP (1) JP2022515495A (fr)
DE (1) DE112019006540T5 (fr)
FR (1) FR3091299B1 (fr)
WO (1) WO2020136326A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113789575B (zh) * 2021-09-03 2022-07-08 中国科学院重庆绿色智能技术研究院 一种pvd技术生长大尺度iv-vi族化合物单晶薄膜材料的方法
CN114525582B (zh) * 2022-01-05 2023-08-04 西安电子科技大学 一种单晶金刚石及制备方法
CN116988162B (zh) * 2023-08-07 2024-05-17 化合积电(厦门)半导体科技有限公司 一种降低铱衬底异质外延单晶金刚石表面缺陷的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4769428B2 (ja) * 2004-05-25 2011-09-07 厚仁 澤邊 ダイヤモンド膜成長基板の形成方法

Also Published As

Publication number Publication date
FR3091299A1 (fr) 2020-07-03
JP2022515495A (ja) 2022-02-18
DE112019006540T5 (de) 2021-09-30
WO2020136326A1 (fr) 2020-07-02

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