FR3087290B1 - Point memoire - Google Patents
Point memoire Download PDFInfo
- Publication number
- FR3087290B1 FR3087290B1 FR1859560A FR1859560A FR3087290B1 FR 3087290 B1 FR3087290 B1 FR 3087290B1 FR 1859560 A FR1859560 A FR 1859560A FR 1859560 A FR1859560 A FR 1859560A FR 3087290 B1 FR3087290 B1 FR 3087290B1
- Authority
- FR
- France
- Prior art keywords
- memory point
- region
- resistivity
- contacts
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
La présente description concerne un transistor MOS (10) dans lequel la résistivité de la région de source et/ou de drain (12) est apte à être augmentée de façon irréversible par application d'un courant électrique entre deux contacts (12C-A, 12C-B) de ladite région (12).
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1859560A FR3087290B1 (fr) | 2018-10-16 | 2018-10-16 | Point memoire |
US16/594,311 US11037938B2 (en) | 2018-10-16 | 2019-10-07 | Memory cell |
CN201910977372.2A CN111063686A (zh) | 2018-10-16 | 2019-10-15 | 存储器单元 |
CN201921724356.4U CN210723027U (zh) | 2018-10-16 | 2019-10-15 | 半导体存储器单元和存储器电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1859560A FR3087290B1 (fr) | 2018-10-16 | 2018-10-16 | Point memoire |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3087290A1 FR3087290A1 (fr) | 2020-04-17 |
FR3087290B1 true FR3087290B1 (fr) | 2020-11-06 |
Family
ID=65763543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1859560A Active FR3087290B1 (fr) | 2018-10-16 | 2018-10-16 | Point memoire |
Country Status (3)
Country | Link |
---|---|
US (1) | US11037938B2 (fr) |
CN (2) | CN210723027U (fr) |
FR (1) | FR3087290B1 (fr) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002043152A2 (fr) | 2000-11-27 | 2002-05-30 | Koninklijke Philips Electronics N.V. | Memoire rom a fusibles multiples comprenant une structure de cellules a dispositif mos et procede de lecture et d'ecriture pour cette memoire |
JP2005286263A (ja) * | 2004-03-31 | 2005-10-13 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体マスクレイアウト方法 |
CN101140301B (zh) * | 2006-09-08 | 2010-09-29 | 深圳赛意法微电子有限公司 | 零等待电流精确过电压比较器 |
FR2929751A1 (fr) * | 2008-04-08 | 2009-10-09 | St Microelectronics Sa | Procede de programmation d'un dispositif de memoire du type programmable une fois et circuit integre incorporant un tel dispositif de memoire |
US8878156B2 (en) * | 2011-11-21 | 2014-11-04 | Avalanche Technology Inc. | Memory device having stitched arrays of 4 F2 memory cells |
JP5923046B2 (ja) * | 2013-01-11 | 2016-05-24 | 株式会社東芝 | 半導体装置の製造方法 |
WO2017105554A1 (fr) * | 2015-12-14 | 2017-06-22 | Circuit Seed, Llc | Transistor à effet de champ à courant de sursaturation et dispositif mos à transimpédance |
FR3045938B1 (fr) | 2015-12-22 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Circuit integre cointegrant un transistor fet et un point memoire rram |
US10573375B1 (en) * | 2018-08-28 | 2020-02-25 | Intel Corporation | Methods and circuitry for programming non-volatile resistive switches using varistors |
-
2018
- 2018-10-16 FR FR1859560A patent/FR3087290B1/fr active Active
-
2019
- 2019-10-07 US US16/594,311 patent/US11037938B2/en active Active
- 2019-10-15 CN CN201921724356.4U patent/CN210723027U/zh active Active
- 2019-10-15 CN CN201910977372.2A patent/CN111063686A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US11037938B2 (en) | 2021-06-15 |
CN111063686A (zh) | 2020-04-24 |
FR3087290A1 (fr) | 2020-04-17 |
US20200119024A1 (en) | 2020-04-16 |
CN210723027U (zh) | 2020-06-09 |
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Legal Events
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20200417 |
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Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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