FR3087290B1 - Point memoire - Google Patents

Point memoire Download PDF

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Publication number
FR3087290B1
FR3087290B1 FR1859560A FR1859560A FR3087290B1 FR 3087290 B1 FR3087290 B1 FR 3087290B1 FR 1859560 A FR1859560 A FR 1859560A FR 1859560 A FR1859560 A FR 1859560A FR 3087290 B1 FR3087290 B1 FR 3087290B1
Authority
FR
France
Prior art keywords
memory point
region
resistivity
contacts
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1859560A
Other languages
English (en)
Other versions
FR3087290A1 (fr
Inventor
Philippe Galy
Renan Lethiecq
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics France SAS
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1859560A priority Critical patent/FR3087290B1/fr
Priority to US16/594,311 priority patent/US11037938B2/en
Priority to CN201921724356.4U priority patent/CN210723027U/zh
Priority to CN201910977372.2A priority patent/CN111063686A/zh
Publication of FR3087290A1 publication Critical patent/FR3087290A1/fr
Application granted granted Critical
Publication of FR3087290B1 publication Critical patent/FR3087290B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

La présente description concerne un transistor MOS (10) dans lequel la résistivité de la région de source et/ou de drain (12) est apte à être augmentée de façon irréversible par application d'un courant électrique entre deux contacts (12C-A, 12C-B) de ladite région (12).
FR1859560A 2018-10-16 2018-10-16 Point memoire Active FR3087290B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1859560A FR3087290B1 (fr) 2018-10-16 2018-10-16 Point memoire
US16/594,311 US11037938B2 (en) 2018-10-16 2019-10-07 Memory cell
CN201921724356.4U CN210723027U (zh) 2018-10-16 2019-10-15 半导体存储器单元和存储器电路
CN201910977372.2A CN111063686A (zh) 2018-10-16 2019-10-15 存储器单元

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1859560A FR3087290B1 (fr) 2018-10-16 2018-10-16 Point memoire

Publications (2)

Publication Number Publication Date
FR3087290A1 FR3087290A1 (fr) 2020-04-17
FR3087290B1 true FR3087290B1 (fr) 2020-11-06

Family

ID=65763543

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1859560A Active FR3087290B1 (fr) 2018-10-16 2018-10-16 Point memoire

Country Status (3)

Country Link
US (1) US11037938B2 (fr)
CN (2) CN111063686A (fr)
FR (1) FR3087290B1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004515061A (ja) 2000-11-27 2004-05-20 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｍｏｓデバイスベースのセル構造を有するポリヒューズｒｏｍ、及びそれに対する読出しと書込みの方法
JP2005286263A (ja) * 2004-03-31 2005-10-13 Matsushita Electric Ind Co Ltd 半導体装置および半導体マスクレイアウト方法
CN101140301B (zh) * 2006-09-08 2010-09-29 深圳赛意法微电子有限公司 零等待电流精确过电压比较器
FR2929751A1 (fr) * 2008-04-08 2009-10-09 St Microelectronics Sa Procede de programmation d'un dispositif de memoire du type programmable une fois et circuit integre incorporant un tel dispositif de memoire
US8878156B2 (en) * 2011-11-21 2014-11-04 Avalanche Technology Inc. Memory device having stitched arrays of 4 F2 memory cells
JP5923046B2 (ja) * 2013-01-11 2016-05-24 株式会社東芝 半導体装置の製造方法
CN108140613B (zh) * 2015-12-14 2020-07-28 电路种子有限责任公司 过饱和电流场效应晶体管和跨阻抗mos装置
FR3045938B1 (fr) 2015-12-22 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre cointegrant un transistor fet et un point memoire rram
US10573375B1 (en) * 2018-08-28 2020-02-25 Intel Corporation Methods and circuitry for programming non-volatile resistive switches using varistors

Also Published As

Publication number Publication date
US11037938B2 (en) 2021-06-15
CN210723027U (zh) 2020-06-09
US20200119024A1 (en) 2020-04-16
CN111063686A (zh) 2020-04-24
FR3087290A1 (fr) 2020-04-17

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