FR3083642B1 - Structure d’encapsulation d’un dispositif d’alimentation - Google Patents
Structure d’encapsulation d’un dispositif d’alimentation Download PDFInfo
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- FR3083642B1 FR3083642B1 FR1900551A FR1900551A FR3083642B1 FR 3083642 B1 FR3083642 B1 FR 3083642B1 FR 1900551 A FR1900551 A FR 1900551A FR 1900551 A FR1900551 A FR 1900551A FR 3083642 B1 FR3083642 B1 FR 3083642B1
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- 239000000758 substrate Substances 0.000 abstract 4
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
Une structure d’encapsulation d’un dispositif d’alimentation comprend un substrat ayant un premier circuit, un premier dispositif d’alimentation, un second dispositif d’alimentation, un film isolant ayant un second circuit, au moins un composant électronique et un boîtier. Le premier dispositif d’alimentation, le second dispositif d’alimentation et le film isolant sont disposés sur le substrat. Le premier dispositif d’alimentation et le second dispositif d’alimentation sont directement connectés électriquement l’un à l’autre par l’intermédiaire du premier circuit du substrat. Le composant électronique est disposé sur le film isolant. Le boîtier encapsule le substrat, le premier dispositif d’alimentation, le second dispositif d’alimentation et le composant électronique.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107123198A TWI664701B (zh) | 2018-07-04 | 2018-07-04 | 功率元件封裝結構 |
TW107123198 | 2018-07-04 |
Publications (2)
Publication Number | Publication Date |
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FR3083642A1 FR3083642A1 (fr) | 2020-01-10 |
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US (1) | US10804189B2 (fr) |
DE (1) | DE102018132425B4 (fr) |
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US7687885B2 (en) | 2006-05-30 | 2010-03-30 | Renesas Technology Corp. | Semiconductor device with reduced parasitic inductance |
US8008897B2 (en) * | 2007-06-11 | 2011-08-30 | Alpha & Omega Semiconductor, Ltd | Boost converter with integrated high power discrete FET and low voltage controller |
US7825508B2 (en) | 2006-07-28 | 2010-11-02 | Alpha Omega Semiconductor, Inc. | Multi-die DC-DC buck power converter with efficient packaging |
US8456141B2 (en) * | 2007-06-11 | 2013-06-04 | Alpha & Omega Semiconductor, Inc. | Boost converter with integrated high power discrete FET and low voltage controller |
CN101859755B (zh) | 2010-05-14 | 2012-01-04 | 上海凯虹科技电子有限公司 | 一种功率mosfet封装体及其封装方法 |
JP6094044B2 (ja) * | 2011-03-23 | 2017-03-15 | 大日本印刷株式会社 | 放熱基板およびそれを用いた素子 |
EP2482312A4 (fr) | 2011-04-29 | 2012-09-26 | Huawei Tech Co Ltd | Module d'alimentation et son procédé d'encapsulation et d'intégration |
DE102013225493A1 (de) * | 2013-08-12 | 2015-02-12 | Hyundai Motor Company | Umwandlervorrichtung und -verfahren eines Elektrofahrzeugs |
JP6263014B2 (ja) * | 2013-12-12 | 2018-01-17 | 株式会社日立製作所 | 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 |
CN104716128B (zh) * | 2013-12-16 | 2019-11-22 | 台达电子企业管理(上海)有限公司 | 功率模块、电源变换器以及功率模块的制造方法 |
TWI578454B (zh) | 2014-10-31 | 2017-04-11 | 尼克森微電子股份有限公司 | 扇出晶圓級晶片封裝結構及其製造方法 |
US9666511B2 (en) * | 2015-01-15 | 2017-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolation method for a stand alone high voltage laterally-diffused metal-oxide semiconductor (LDMOS) transistor |
TWI575679B (zh) * | 2015-12-10 | 2017-03-21 | 財團法人工業技術研究院 | 功率模組及其製造方法 |
TWI588919B (zh) * | 2016-03-04 | 2017-06-21 | 尼克森微電子股份有限公司 | 半導體封裝結構及其製造方法 |
US10707143B2 (en) * | 2016-05-30 | 2020-07-07 | Industrial Technology Research Institute | Plug-in type power module and subsystem thereof |
US20190020272A1 (en) * | 2017-07-12 | 2019-01-17 | Globalfoundries Singapore Pte. Ltd. | Integrated dc-dc boost converter with gallium nitride power transistor |
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FR3083642A1 (fr) | 2020-01-10 |
US20200013705A1 (en) | 2020-01-09 |
US10804189B2 (en) | 2020-10-13 |
DE102018132425A1 (de) | 2020-01-09 |
TWI664701B (zh) | 2019-07-01 |
DE102018132425B4 (de) | 2021-12-02 |
TW202006898A (zh) | 2020-02-01 |
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