FR3078821B1 - Procede de realisation d'une bille de brasure sur une face d'un substrat - Google Patents

Procede de realisation d'une bille de brasure sur une face d'un substrat Download PDF

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Publication number
FR3078821B1
FR3078821B1 FR1852069A FR1852069A FR3078821B1 FR 3078821 B1 FR3078821 B1 FR 3078821B1 FR 1852069 A FR1852069 A FR 1852069A FR 1852069 A FR1852069 A FR 1852069A FR 3078821 B1 FR3078821 B1 FR 3078821B1
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FR
France
Prior art keywords
film
face
producing
substrate
front face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1852069A
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English (en)
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FR3078821A1 (fr
Inventor
Arnaud Garnier
Laetitia Castagne
Anthony DE LUCA
Daniel MERMIN
Pierre Montmeat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1852069A priority Critical patent/FR3078821B1/fr
Priority to US16/977,987 priority patent/US11309269B2/en
Priority to EP19717523.5A priority patent/EP3743940A1/fr
Priority to PCT/FR2019/050468 priority patent/WO2019170987A1/fr
Publication of FR3078821A1 publication Critical patent/FR3078821A1/fr
Application granted granted Critical
Publication of FR3078821B1 publication Critical patent/FR3078821B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
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    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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    • H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • H—ELECTRICITY
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    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H01L2224/1132—Screen printing, i.e. using a stencil
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    • H01L2224/11474—Multilayer masks
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/116—Manufacturing methods by patterning a pre-deposited material
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    • H01L2224/11614—Physical or chemical etching by chemical means only
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
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    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
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    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention concerne un procédé de réalisation par sérigraphie d'une bille de brasure (50) sur une face avant d'un substrat (10), qui comprend les étapes : a) la formation d'un film (30) sur la face avant ; b) la formation d'une ouverture dans le film (30) ; c) le remplissage de l'ouverture par un matériau de brasure ; d) le retrait du film (30) ; le procédé étant caractérisé en que l'étape a) est précédée de la formation d'une couche intermédiaire (20) intercalée entre le film et la face avant, la couche intermédiaire (20) étant adaptée pour présenter une énergie d'adhésion, selon l'une et/ou l'autre des interfaces formées avec la première face avant et le film, inférieure à l'énergie d'adhésion d'une interface susceptible d'être formée entre le film et la première face avant.
FR1852069A 2018-03-09 2018-03-09 Procede de realisation d'une bille de brasure sur une face d'un substrat Active FR3078821B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1852069A FR3078821B1 (fr) 2018-03-09 2018-03-09 Procede de realisation d'une bille de brasure sur une face d'un substrat
US16/977,987 US11309269B2 (en) 2018-03-09 2019-03-01 Method for producing a solder bump on a substrate surface
EP19717523.5A EP3743940A1 (fr) 2018-03-09 2019-03-01 Procede de realisation d'une bille de brasure sur une face d'un substrat
PCT/FR2019/050468 WO2019170987A1 (fr) 2018-03-09 2019-03-01 Procede de realisation d'une bille de brasure sur une face d'un substrat

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852069 2018-03-09
FR1852069A FR3078821B1 (fr) 2018-03-09 2018-03-09 Procede de realisation d'une bille de brasure sur une face d'un substrat

Publications (2)

Publication Number Publication Date
FR3078821A1 FR3078821A1 (fr) 2019-09-13
FR3078821B1 true FR3078821B1 (fr) 2020-04-03

Family

ID=62455690

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1852069A Active FR3078821B1 (fr) 2018-03-09 2018-03-09 Procede de realisation d'une bille de brasure sur une face d'un substrat

Country Status (4)

Country Link
US (1) US11309269B2 (fr)
EP (1) EP3743940A1 (fr)
FR (1) FR3078821B1 (fr)
WO (1) WO2019170987A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586322B1 (en) * 2001-12-21 2003-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making a bump on a substrate using multiple photoresist layers
JP2004140313A (ja) * 2002-08-22 2004-05-13 Jsr Corp 二層積層膜を用いた電極パッド上へのバンプ形成方法
JP3854213B2 (ja) * 2002-09-20 2006-12-06 富士通株式会社 バンプ電極付き電子部品の製造方法
US7517788B2 (en) * 2005-12-29 2009-04-14 Intel Corporation System, apparatus, and method for advanced solder bumping
CN106068551B (zh) 2014-01-07 2019-12-17 布鲁尔科技公司 用于暂时性晶片粘结方法的环状烯烃聚合物组合物和聚硅氧烷剥离层
JP2017526177A (ja) * 2014-08-01 2017-09-07 オーソゴナル，インコーポレイテッド 素子のフォトリソグラフパターン化方法

Also Published As

Publication number Publication date
FR3078821A1 (fr) 2019-09-13
US11309269B2 (en) 2022-04-19
WO2019170987A1 (fr) 2019-09-12
US20210074659A1 (en) 2021-03-11
EP3743940A1 (fr) 2020-12-02

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