FR3078440B1 - Jonction pn - Google Patents

Jonction pn Download PDF

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Publication number
FR3078440B1
FR3078440B1 FR1851613A FR1851613A FR3078440B1 FR 3078440 B1 FR3078440 B1 FR 3078440B1 FR 1851613 A FR1851613 A FR 1851613A FR 1851613 A FR1851613 A FR 1851613A FR 3078440 B1 FR3078440 B1 FR 3078440B1
Authority
FR
France
Prior art keywords
junction
silicon
divided
region
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1851613A
Other languages
English (en)
Other versions
FR3078440A1 (fr
Inventor
Stephane Monfray
Frederic Boeuf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1851613A priority Critical patent/FR3078440B1/fr
Priority to US16/254,753 priority patent/US10690947B2/en
Publication of FR3078440A1 publication Critical patent/FR3078440A1/fr
Application granted granted Critical
Publication of FR3078440B1 publication Critical patent/FR3078440B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne une jonction PN verticale comprenant une première région (46) divisée en une partie supérieure (47) en silicium-germanium et une partie inférieure (49) en silicium. Figure 4.
FR1851613A 2018-02-23 2018-02-23 Jonction pn Active FR3078440B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1851613A FR3078440B1 (fr) 2018-02-23 2018-02-23 Jonction pn
US16/254,753 US10690947B2 (en) 2018-02-23 2019-01-23 Photonic devices and methods of fabrication thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1851613A FR3078440B1 (fr) 2018-02-23 2018-02-23 Jonction pn
FR1851613 2018-02-23

Publications (2)

Publication Number Publication Date
FR3078440A1 FR3078440A1 (fr) 2019-08-30
FR3078440B1 true FR3078440B1 (fr) 2022-06-24

Family

ID=62222921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1851613A Active FR3078440B1 (fr) 2018-02-23 2018-02-23 Jonction pn

Country Status (2)

Country Link
US (1) US10690947B2 (fr)
FR (1) FR3078440B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11036069B2 (en) * 2019-03-18 2021-06-15 Cisco Technology, Inc. Optical modulator using monocrystalline and polycrystalline silicon

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943471B1 (en) * 2006-05-15 2011-05-17 Globalfoundries Inc. Diode with asymmetric silicon germanium anode
US7977178B2 (en) * 2009-03-02 2011-07-12 International Business Machines Corporation Asymmetric source/drain junctions for low power silicon on insulator devices
JP6622228B2 (ja) * 2015-02-06 2019-12-18 技術研究組合光電子融合基盤技術研究所 光変調器及びその製造方法
US20160313577A1 (en) * 2015-04-23 2016-10-27 Laxense Inc. Dual-junction optical modulator and the method to make the same

Also Published As

Publication number Publication date
US10690947B2 (en) 2020-06-23
FR3078440A1 (fr) 2019-08-30
US20190265518A1 (en) 2019-08-29

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