SG11201900926XA - Ring for electrode - Google Patents

Ring for electrode

Info

Publication number
SG11201900926XA
SG11201900926XA SG11201900926XA SG11201900926XA SG11201900926XA SG 11201900926X A SG11201900926X A SG 11201900926XA SG 11201900926X A SG11201900926X A SG 11201900926XA SG 11201900926X A SG11201900926X A SG 11201900926XA SG 11201900926X A SG11201900926X A SG 11201900926XA
Authority
SG
Singapore
Prior art keywords
ring
electrode
joining
silicon members
joining part
Prior art date
Application number
SG11201900926XA
Inventor
Atsushi Ikari
Satoshi Fujii
Original Assignee
Thinkon New Tech Japan Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thinkon New Tech Japan Corporation filed Critical Thinkon New Tech Japan Corporation
Publication of SG11201900926XA publication Critical patent/SG11201900926XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Motor Or Generator Current Collectors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Catalysts (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A ring for an electrode includes three or more silicon members (38) having an arc shape and a joining part joining the silicon members (38). The joining part contains boron oxide.
SG11201900926XA 2016-08-04 2017-07-28 Ring for electrode SG11201900926XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016153986A JP6146839B1 (en) 2016-08-04 2016-08-04 Ring for electrode
PCT/JP2017/027559 WO2018025780A1 (en) 2016-08-04 2017-07-28 Ring for electrode

Publications (1)

Publication Number Publication Date
SG11201900926XA true SG11201900926XA (en) 2019-02-27

Family

ID=59061204

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900926XA SG11201900926XA (en) 2016-08-04 2017-07-28 Ring for electrode

Country Status (8)

Country Link
US (1) US11380525B2 (en)
EP (1) EP3496134B1 (en)
JP (1) JP6146839B1 (en)
KR (1) KR102378968B1 (en)
CN (1) CN109564869B (en)
SG (1) SG11201900926XA (en)
TW (1) TWI743158B (en)
WO (1) WO2018025780A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6146840B1 (en) * 2016-08-04 2017-06-14 日本新工芯技株式会社 Electrode plate
CN111863578B (en) * 2019-04-28 2023-06-16 中微半导体设备(上海)股份有限公司 Plasma processing equipment
KR102549935B1 (en) * 2021-04-28 2023-06-30 주식회사 월덱스 Multi-body limited ring for plasma etching equipment

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB918143A (en) * 1960-07-18 1963-02-13 M O Valve Co Ltd Improvements in or relating to the formation of flanges on glass tubes
KR930010973B1 (en) * 1990-07-31 1993-11-18 삼성전자 주식회사 Manufacturing method of silicon-on-insulator wafer
JP3462458B2 (en) * 1995-01-13 2003-11-05 日本碍子株式会社 High pressure discharge lamp and manufacturing method thereof
JP3511233B2 (en) * 1999-09-30 2004-03-29 富士通株式会社 Silicon lens
JP2001324660A (en) * 2000-05-16 2001-11-22 Sony Corp Focus ring attaching structure for optical equipment
JP3393118B2 (en) 2000-12-21 2003-04-07 株式会社半導体先端テクノロジーズ Plasma etching apparatus and method of manufacturing semiconductor device
JP2003100713A (en) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk Cover for plasma electrode
US7083694B2 (en) 2003-04-23 2006-08-01 Integrated Materials, Inc. Adhesive of a silicon and silica composite particularly useful for joining silicon parts
US7074693B2 (en) * 2003-06-24 2006-07-11 Integrated Materials, Inc. Plasma spraying for joining silicon parts
JP4905855B2 (en) * 2007-03-29 2012-03-28 三菱マテリアル株式会社 Focus ring and shield ring for plasma etching
JP2008300425A (en) * 2007-05-29 2008-12-11 Union Material Kk Bonding method of silicon crystals, and silicon crystal product
JP5046859B2 (en) * 2007-10-30 2012-10-10 京セラ株式会社 Bonded body, adsorbing member, adsorbing apparatus and processing apparatus
JP2009290087A (en) * 2008-05-30 2009-12-10 Tokyo Electron Ltd Focus ring, and plasma processing apparatus
JP5100617B2 (en) * 2008-11-07 2012-12-19 東京エレクトロン株式会社 Ring-shaped member and manufacturing method thereof
JP2011003730A (en) * 2009-06-18 2011-01-06 Mitsubishi Materials Corp Silicon ring for plasma treatment apparatus
JP5618505B2 (en) * 2009-07-30 2014-11-05 テクノクオーツ株式会社 Recycling method of quartz glass member
JP5727798B2 (en) * 2010-07-23 2015-06-03 アルプス電気株式会社 MEMS sensor
JP5719599B2 (en) 2011-01-07 2015-05-20 東京エレクトロン株式会社 Substrate processing equipment
JP5949760B2 (en) * 2011-05-27 2016-07-13 株式会社ニコン CaF2 polycrystal, focus ring, plasma processing apparatus, and method for producing CaF2 polycrystal
JP5893516B2 (en) * 2012-06-22 2016-03-23 東京エレクトロン株式会社 Processing apparatus for processing object and mounting table for processing object
JP5978105B2 (en) * 2012-11-08 2016-08-24 株式会社東芝 Silicon carbide ceramic joined body and method for producing silicon carbide ceramic joined body
DE102013003401A1 (en) * 2013-02-28 2014-08-28 Klinger Ag Flat gasket for flange connections
JP2015065024A (en) * 2013-09-25 2015-04-09 株式会社ニコン Plasma processing apparatus, plasma processing method and ring member
JP5615454B1 (en) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 Focus ring
US20170056994A1 (en) * 2015-08-28 2017-03-02 Lam Research Corporation Liquid phase bonding of a silicon or silicon carbide component to another silicon or silicon carbide component

Also Published As

Publication number Publication date
JP2018022801A (en) 2018-02-08
TW201807751A (en) 2018-03-01
TWI743158B (en) 2021-10-21
WO2018025780A1 (en) 2018-02-08
US11380525B2 (en) 2022-07-05
CN109564869A (en) 2019-04-02
EP3496134B1 (en) 2021-05-26
EP3496134A4 (en) 2020-03-18
EP3496134A1 (en) 2019-06-12
CN109564869B (en) 2024-01-30
JP6146839B1 (en) 2017-06-14
KR20190034578A (en) 2019-04-02
US20190164728A1 (en) 2019-05-30
KR102378968B1 (en) 2022-03-24

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