FR3066310B1 - Cellule memoire de type ram resistive - Google Patents
Cellule memoire de type ram resistive Download PDFInfo
- Publication number
- FR3066310B1 FR3066310B1 FR1754198A FR1754198A FR3066310B1 FR 3066310 B1 FR3066310 B1 FR 3066310B1 FR 1754198 A FR1754198 A FR 1754198A FR 1754198 A FR1754198 A FR 1754198A FR 3066310 B1 FR3066310 B1 FR 3066310B1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- resistive ram
- ram memory
- selection transistor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Abstract
L'invention concerne une cellule mémoire comprenant un point mémoire (20, 21) de type RAM résistive et un transistor de sélection (22, 23), dans laquelle le point mémoire est disposé sur un flanc du transistor de sélection.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1754198A FR3066310B1 (fr) | 2017-05-12 | 2017-05-12 | Cellule memoire de type ram resistive |
US15/978,003 US10482957B2 (en) | 2017-05-12 | 2018-05-11 | Resistive RAM memory cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1754198 | 2017-05-12 | ||
FR1754198A FR3066310B1 (fr) | 2017-05-12 | 2017-05-12 | Cellule memoire de type ram resistive |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3066310A1 FR3066310A1 (fr) | 2018-11-16 |
FR3066310B1 true FR3066310B1 (fr) | 2020-01-24 |
Family
ID=59649849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1754198A Active FR3066310B1 (fr) | 2017-05-12 | 2017-05-12 | Cellule memoire de type ram resistive |
Country Status (2)
Country | Link |
---|---|
US (1) | US10482957B2 (fr) |
FR (1) | FR3066310B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11663455B2 (en) * | 2020-02-12 | 2023-05-30 | Ememory Technology Inc. | Resistive random-access memory cell and associated cell array structure |
US20220199622A1 (en) * | 2020-12-18 | 2022-06-23 | Ememory Technology Inc. | Resistive memory cell and associated cell array structure |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982912A (ja) | 1995-09-13 | 1997-03-28 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US7755076B2 (en) * | 2007-04-17 | 2010-07-13 | Macronix International Co., Ltd. | 4F2 self align side wall active phase change memory |
JP2010251529A (ja) * | 2009-04-16 | 2010-11-04 | Sony Corp | 半導体記憶装置およびその製造方法 |
US8698118B2 (en) * | 2012-02-29 | 2014-04-15 | Globalfoundries Singapore Pte Ltd | Compact RRAM device and methods of making same |
FR3038132B1 (fr) | 2015-06-23 | 2017-08-11 | St Microelectronics Crolles 2 Sas | Cellule memoire resistive ayant une structure compacte |
FR3038133B1 (fr) * | 2015-06-23 | 2017-08-25 | St Microelectronics Crolles 2 Sas | Cellule memoire a changement de phase ayant une structure compacte |
-
2017
- 2017-05-12 FR FR1754198A patent/FR3066310B1/fr active Active
-
2018
- 2018-05-11 US US15/978,003 patent/US10482957B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180330780A1 (en) | 2018-11-15 |
FR3066310A1 (fr) | 2018-11-16 |
US10482957B2 (en) | 2019-11-19 |
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Effective date: 20181116 |
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