FR3066310B1 - RESISTIVE RAM MEMORY CELL - Google Patents

RESISTIVE RAM MEMORY CELL Download PDF

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Publication number
FR3066310B1
FR3066310B1 FR1754198A FR1754198A FR3066310B1 FR 3066310 B1 FR3066310 B1 FR 3066310B1 FR 1754198 A FR1754198 A FR 1754198A FR 1754198 A FR1754198 A FR 1754198A FR 3066310 B1 FR3066310 B1 FR 3066310B1
Authority
FR
France
Prior art keywords
memory cell
resistive ram
ram memory
selection transistor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1754198A
Other languages
French (fr)
Other versions
FR3066310A1 (en
Inventor
Philippe Boivin
Simon Jeannot
Olivier Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1754198A priority Critical patent/FR3066310B1/en
Priority to US15/978,003 priority patent/US10482957B2/en
Publication of FR3066310A1 publication Critical patent/FR3066310A1/en
Application granted granted Critical
Publication of FR3066310B1 publication Critical patent/FR3066310B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

L'invention concerne une cellule mémoire comprenant un point mémoire (20, 21) de type RAM résistive et un transistor de sélection (22, 23), dans laquelle le point mémoire est disposé sur un flanc du transistor de sélection.The invention relates to a memory cell comprising a memory point (20, 21) of resistive RAM type and a selection transistor (22, 23), in which the memory point is arranged on a side of the selection transistor.

FR1754198A 2017-05-12 2017-05-12 RESISTIVE RAM MEMORY CELL Active FR3066310B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1754198A FR3066310B1 (en) 2017-05-12 2017-05-12 RESISTIVE RAM MEMORY CELL
US15/978,003 US10482957B2 (en) 2017-05-12 2018-05-11 Resistive RAM memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1754198 2017-05-12
FR1754198A FR3066310B1 (en) 2017-05-12 2017-05-12 RESISTIVE RAM MEMORY CELL

Publications (2)

Publication Number Publication Date
FR3066310A1 FR3066310A1 (en) 2018-11-16
FR3066310B1 true FR3066310B1 (en) 2020-01-24

Family

ID=59649849

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1754198A Active FR3066310B1 (en) 2017-05-12 2017-05-12 RESISTIVE RAM MEMORY CELL

Country Status (2)

Country Link
US (1) US10482957B2 (en)
FR (1) FR3066310B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11663455B2 (en) * 2020-02-12 2023-05-30 Ememory Technology Inc. Resistive random-access memory cell and associated cell array structure
US20220199622A1 (en) * 2020-12-18 2022-06-23 Ememory Technology Inc. Resistive memory cell and associated cell array structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982912A (en) 1995-09-13 1997-03-28 Toshiba Corp Semiconductor storage device and its manufacture
US7755076B2 (en) * 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
JP2010251529A (en) * 2009-04-16 2010-11-04 Sony Corp Semiconductor memory device and method of manufacturing the same
US8698118B2 (en) * 2012-02-29 2014-04-15 Globalfoundries Singapore Pte Ltd Compact RRAM device and methods of making same
FR3038132B1 (en) * 2015-06-23 2017-08-11 St Microelectronics Crolles 2 Sas RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE
FR3038133B1 (en) * 2015-06-23 2017-08-25 St Microelectronics Crolles 2 Sas PHASE CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

Also Published As

Publication number Publication date
US10482957B2 (en) 2019-11-19
US20180330780A1 (en) 2018-11-15
FR3066310A1 (en) 2018-11-16

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