FR3065836B1 - Zone de stockage pour un pixel d'une matrice d'image - Google Patents

Zone de stockage pour un pixel d'une matrice d'image Download PDF

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Publication number
FR3065836B1
FR3065836B1 FR1753771A FR1753771A FR3065836B1 FR 3065836 B1 FR3065836 B1 FR 3065836B1 FR 1753771 A FR1753771 A FR 1753771A FR 1753771 A FR1753771 A FR 1753771A FR 3065836 B1 FR3065836 B1 FR 3065836B1
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FR
France
Prior art keywords
charge storage
pixel
image matrix
doped
storage area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1753771A
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English (en)
Other versions
FR3065836A1 (fr
Inventor
Olivier SAXOD
Marie Guillon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1753771A priority Critical patent/FR3065836B1/fr
Priority to US15/959,763 priority patent/US10468440B2/en
Publication of FR3065836A1 publication Critical patent/FR3065836A1/fr
Application granted granted Critical
Publication of FR3065836B1 publication Critical patent/FR3065836B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

L'invention concerne un pixel d'une matrice d'image comprenant une ou plusieurs structures de stockage de charge (200), chaque structure de stockage de charge comprenant : une première tranchée de stockage de charge (202) dopée pour avoir un premier type de conductivité et ayant une première extrémité (208) agencée pour recevoir la charge accumulée par une photodiode ; une deuxième tranchée de stockage de charge (204) dopée pour avoir le premier type de conductivité ; et une première porte de transfert (212) reliant une deuxième extrémité (214) de la première tranchée de stockage de charge (202) et la deuxième tranchée de stockage de charge (202, 204) à un nœud de détection (216), les première et deuxième tranchées de stockage de charge étant reliées entre elles par un canal de liaison (206) dopé pour avoir le premier type de conductivité et bordant une portion d'un bord de la porte de transfert (212).
FR1753771A 2017-04-28 2017-04-28 Zone de stockage pour un pixel d'une matrice d'image Active FR3065836B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1753771A FR3065836B1 (fr) 2017-04-28 2017-04-28 Zone de stockage pour un pixel d'une matrice d'image
US15/959,763 US10468440B2 (en) 2017-04-28 2018-04-23 Storage zone for an image array pixel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1753771 2017-04-28
FR1753771A FR3065836B1 (fr) 2017-04-28 2017-04-28 Zone de stockage pour un pixel d'une matrice d'image

Publications (2)

Publication Number Publication Date
FR3065836A1 FR3065836A1 (fr) 2018-11-02
FR3065836B1 true FR3065836B1 (fr) 2020-02-07

Family

ID=59974502

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1753771A Active FR3065836B1 (fr) 2017-04-28 2017-04-28 Zone de stockage pour un pixel d'une matrice d'image

Country Status (2)

Country Link
US (1) US10468440B2 (fr)
FR (1) FR3065836B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10491877B1 (en) * 2017-12-21 2019-11-26 Facebook Technologies, Llc Depth camera assembly using multiplexed sensor phase measurements to determine depth using fringe interferometry
US11716548B2 (en) 2018-03-13 2023-08-01 Meta Platforms Technologies, Llc Timing of multiplexed sensor phase measurements in a depth camera assembly for depth determination using fringe interferometry
FR3085231B1 (fr) 2018-08-24 2020-09-25 St Microelectronics Crolles 2 Sas Capteur d'images a grande dynamique et faible bruit
FR3094571B1 (fr) * 2019-03-27 2022-04-29 St Microelectronics Crolles 2 Sas Dispositif électronique à photodiode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101030263B1 (ko) * 2006-11-30 2011-04-22 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 거리 측정 소자 및 고체 촬상 장치
JP5427173B2 (ja) * 2008-06-05 2014-02-26 本田技研工業株式会社 光受信機
US8293629B2 (en) 2010-04-06 2012-10-23 Omnivision Technologies, Inc. High full-well capacity pixel with graded photodetector implant
FR2963187A1 (fr) * 2010-07-21 2012-01-27 St Microelectronics Crolles 2 Dispositif d'imagerie a performances ameliorees et procede de commande.
US8804021B2 (en) 2011-11-03 2014-08-12 Omnivision Technologies, Inc. Method, apparatus and system for providing improved full well capacity in an image sensor pixel
FR3049389A1 (fr) * 2016-03-22 2017-09-29 St Microelectronics Crolles 2 Sas Mur d'isolement et son procede de fabrication

Also Published As

Publication number Publication date
US20180315784A1 (en) 2018-11-01
FR3065836A1 (fr) 2018-11-02
US10468440B2 (en) 2019-11-05

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