FR3047606B1 - Amplificateur faible bruit entierement integre. - Google Patents
Amplificateur faible bruit entierement integre. Download PDFInfo
- Publication number
- FR3047606B1 FR3047606B1 FR1650888A FR1650888A FR3047606B1 FR 3047606 B1 FR3047606 B1 FR 3047606B1 FR 1650888 A FR1650888 A FR 1650888A FR 1650888 A FR1650888 A FR 1650888A FR 3047606 B1 FR3047606 B1 FR 3047606B1
- Authority
- FR
- France
- Prior art keywords
- noise amplifier
- integrated low
- low noise
- inductive
- entirely integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001939 inductive effect Effects 0.000 abstract 5
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
- H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H04B5/26—
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/181—A coil being added in the gate circuit of a FET amplifier stage, e.g. for noise reducing purposes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/216—A coil being added in the input circuit, e.g. base, gate, of an amplifier stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/297—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising a capacitor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/301—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising a coil
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/321—Use of a microprocessor in an amplifier circuit or its control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/48—Indexing scheme relating to amplifiers the output of the amplifier being coupled out by a capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
Abstract
Il est proposé un dispositif amplificateur faible bruit intégré (2) comportant un élément inductif d'entrée (Lin), un circuit amplificateur (CA), un élément inductif de sortie (Lout) et un élément inductif de dégénérescence (Ldeg). Selon une caractéristique générale, le circuit amplificateur (CA) et lesdits éléments inductifs de sortie (Lout) et de dégénérescence (Ldeg) sont situés à l'intérieur dudit élément inductif d'entrée (Lin).
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1650888A FR3047606B1 (fr) | 2016-02-04 | 2016-02-04 | Amplificateur faible bruit entierement integre. |
US15/229,464 US20170230014A1 (en) | 2016-02-04 | 2016-08-05 | Fully integrated low-noise amplifier |
CN201610704464.XA CN107040219B (zh) | 2016-02-04 | 2016-08-22 | 完全集成低噪声放大器 |
CN201620920304.4U CN206041940U (zh) | 2016-02-04 | 2016-08-22 | 集成放大器设备以及集成电路 |
US15/833,039 US10243522B2 (en) | 2016-02-04 | 2017-12-06 | Fully integrated low-noise amplifier |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1650888 | 2016-02-04 | ||
FR1650888A FR3047606B1 (fr) | 2016-02-04 | 2016-02-04 | Amplificateur faible bruit entierement integre. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3047606A1 FR3047606A1 (fr) | 2017-08-11 |
FR3047606B1 true FR3047606B1 (fr) | 2018-03-09 |
Family
ID=56008689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1650888A Expired - Fee Related FR3047606B1 (fr) | 2016-02-04 | 2016-02-04 | Amplificateur faible bruit entierement integre. |
Country Status (3)
Country | Link |
---|---|
US (2) | US20170230014A1 (fr) |
CN (2) | CN107040219B (fr) |
FR (1) | FR3047606B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201717857D0 (en) | 2017-10-30 | 2017-12-13 | Novelda As | Amplifier |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100698617B1 (ko) * | 2005-02-15 | 2007-03-21 | 삼성전자주식회사 | 집적 인덕터를 포함한 집적회로 |
US20080185679A1 (en) * | 2006-10-19 | 2008-08-07 | United Microelectronics Corp. | Inductor layout and manufacturing method thereof |
CN201039094Y (zh) * | 2007-05-21 | 2008-03-19 | 杭州中科微电子有限公司 | 一种高增益射频低噪声放大器 |
US8633777B2 (en) * | 2009-12-01 | 2014-01-21 | Qualcomm Incorporated | Methods and apparatus for inductors with integrated passive and active elements |
US20140015614A1 (en) * | 2012-07-10 | 2014-01-16 | Infineon Technologies Ag | System and Method for a Low Noise Amplifier |
US8912845B2 (en) * | 2013-01-07 | 2014-12-16 | Analog Devices, Inc. | Multiple winding transformer coupled amplifier |
CN103973233A (zh) * | 2014-05-20 | 2014-08-06 | 上海集成电路研发中心有限公司 | 基于差分结构有源电感的低噪声放大器 |
US9853614B2 (en) * | 2014-12-04 | 2017-12-26 | Qualcomm Incorporated | Amplifier with triple-coupled inductors |
-
2016
- 2016-02-04 FR FR1650888A patent/FR3047606B1/fr not_active Expired - Fee Related
- 2016-08-05 US US15/229,464 patent/US20170230014A1/en not_active Abandoned
- 2016-08-22 CN CN201610704464.XA patent/CN107040219B/zh active Active
- 2016-08-22 CN CN201620920304.4U patent/CN206041940U/zh not_active Withdrawn - After Issue
-
2017
- 2017-12-06 US US15/833,039 patent/US10243522B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170230014A1 (en) | 2017-08-10 |
CN107040219A (zh) | 2017-08-11 |
FR3047606A1 (fr) | 2017-08-11 |
CN206041940U (zh) | 2017-03-22 |
US20180097481A1 (en) | 2018-04-05 |
CN107040219B (zh) | 2022-04-19 |
US10243522B2 (en) | 2019-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20170811 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
ST | Notification of lapse |
Effective date: 20211005 |