FR3045074B1 - Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication - Google Patents

Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication Download PDF

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Publication number
FR3045074B1
FR3045074B1 FR1562311A FR1562311A FR3045074B1 FR 3045074 B1 FR3045074 B1 FR 3045074B1 FR 1562311 A FR1562311 A FR 1562311A FR 1562311 A FR1562311 A FR 1562311A FR 3045074 B1 FR3045074 B1 FR 3045074B1
Authority
FR
France
Prior art keywords
resistivity
manufacture
adjusting
semiconductor ingot
ingot during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1562311A
Other languages
English (en)
French (fr)
Other versions
FR3045074A1 (fr
Inventor
Jordi Veirman
Mickael Albaric
Sebastien Dubois
Jacky Stadler
Mathieu Tomassini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1562311A priority Critical patent/FR3045074B1/fr
Priority to TW105141142A priority patent/TWI746494B/zh
Priority to EP16819040.3A priority patent/EP3390699A1/fr
Priority to CN201680079742.5A priority patent/CN108495956B/zh
Priority to PCT/EP2016/080982 priority patent/WO2017102832A1/fr
Publication of FR3045074A1 publication Critical patent/FR3045074A1/fr
Application granted granted Critical
Publication of FR3045074B1 publication Critical patent/FR3045074B1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1562311A 2015-12-14 2015-12-14 Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication Active FR3045074B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1562311A FR3045074B1 (fr) 2015-12-14 2015-12-14 Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication
TW105141142A TWI746494B (zh) 2015-12-14 2016-12-13 調整製造中之半導體錠之電阻的方法
EP16819040.3A EP3390699A1 (fr) 2015-12-14 2016-12-14 Procédé pour ajuster la résistivité d'un lingot semi-conducteur lors de sa fabrication
CN201680079742.5A CN108495956B (zh) 2015-12-14 2016-12-14 一种用于调整半导体晶锭在其制造期间的电阻率的方法
PCT/EP2016/080982 WO2017102832A1 (fr) 2015-12-14 2016-12-14 Procédé pour ajuster la résistivité d'un lingot semi-conducteur lors de sa fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1562311A FR3045074B1 (fr) 2015-12-14 2015-12-14 Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication
FR1562311 2015-12-14

Publications (2)

Publication Number Publication Date
FR3045074A1 FR3045074A1 (fr) 2017-06-16
FR3045074B1 true FR3045074B1 (fr) 2018-01-05

Family

ID=55752413

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1562311A Active FR3045074B1 (fr) 2015-12-14 2015-12-14 Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication

Country Status (5)

Country Link
EP (1) EP3390699A1 (zh)
CN (1) CN108495956B (zh)
FR (1) FR3045074B1 (zh)
TW (1) TWI746494B (zh)
WO (1) WO2017102832A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3075379B1 (fr) * 2017-12-15 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Methode de validation de l'histoire thermique d'un lingot semi-conducteur
US11739437B2 (en) * 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
CN114637954B (zh) * 2022-03-25 2023-02-07 宁夏中欣晶圆半导体科技有限公司 晶棒碳含量轴向分布计算方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2964459B1 (fr) * 2010-09-02 2012-09-28 Commissariat Energie Atomique Procede de cartographie de la concentration en oxygene
JP5772553B2 (ja) * 2011-12-06 2015-09-02 信越半導体株式会社 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
FR2989168B1 (fr) * 2012-04-06 2014-03-28 Commissariat Energie Atomique Determination de la concentration en oxygene interstitiel dans un echantillon semi-conducteur
FR3009380B1 (fr) * 2013-08-02 2015-07-31 Commissariat Energie Atomique Procede de localisation d'une plaquette dans son lingot
FR3027676B1 (fr) * 2014-10-22 2016-12-09 Commissariat Energie Atomique Procede de caracterisation de la concentration en oxygene interstitiel dans un lingot semi-conducteur

Also Published As

Publication number Publication date
CN108495956A (zh) 2018-09-04
WO2017102832A1 (fr) 2017-06-22
CN108495956B (zh) 2021-10-22
FR3045074A1 (fr) 2017-06-16
EP3390699A1 (fr) 2018-10-24
TWI746494B (zh) 2021-11-21
TW201736648A (zh) 2017-10-16

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