FR3034204A1 - - Google Patents

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Publication number
FR3034204A1
FR3034204A1 FR1552385A FR1552385A FR3034204A1 FR 3034204 A1 FR3034204 A1 FR 3034204A1 FR 1552385 A FR1552385 A FR 1552385A FR 1552385 A FR1552385 A FR 1552385A FR 3034204 A1 FR3034204 A1 FR 3034204A1
Authority
FR
France
Prior art keywords
spad
circuit
cells
network
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR1552385A
Other languages
English (en)
French (fr)
Inventor
Pascal Mellot
Stuart Mcleod
Bruce Rae
Marc Drader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Research and Development Ltd
Original Assignee
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Grenoble 2 SAS, STMicroelectronics Research and Development Ltd filed Critical STMicroelectronics Grenoble 2 SAS
Priority to FR1552385A priority Critical patent/FR3034204A1/fr
Priority to US14/926,454 priority patent/US9786701B2/en
Publication of FR3034204A1 publication Critical patent/FR3034204A1/fr
Priority to US15/709,791 priority patent/US10304877B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/497—Means for monitoring or calibrating
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
FR1552385A 2015-03-23 2015-03-23 Pending FR3034204A1 (cg-RX-API-DMAC7.html)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1552385A FR3034204A1 (cg-RX-API-DMAC7.html) 2015-03-23 2015-03-23
US14/926,454 US9786701B2 (en) 2015-03-23 2015-10-29 Circuit and method for controlling a SPAD array based on a measured count rate
US15/709,791 US10304877B2 (en) 2015-03-23 2017-09-20 Circuit and method for controlling and selectively enabling photodiode cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1552385A FR3034204A1 (cg-RX-API-DMAC7.html) 2015-03-23 2015-03-23

Publications (1)

Publication Number Publication Date
FR3034204A1 true FR3034204A1 (cg-RX-API-DMAC7.html) 2016-09-30

Family

ID=54186035

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1552385A Pending FR3034204A1 (cg-RX-API-DMAC7.html) 2015-03-23 2015-03-23

Country Status (2)

Country Link
US (2) US9786701B2 (cg-RX-API-DMAC7.html)
FR (1) FR3034204A1 (cg-RX-API-DMAC7.html)

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US10620300B2 (en) 2015-08-20 2020-04-14 Apple Inc. SPAD array with gated histogram construction
FR3043797A1 (cg-RX-API-DMAC7.html) 2015-11-16 2017-05-19 Stmicroelectronics (Grenoble 2) Sas
FR3043796A1 (cg-RX-API-DMAC7.html) 2015-11-16 2017-05-19 Stmicroelectronics (Grenoble 2) Sas
FR3056332A1 (fr) 2016-09-21 2018-03-23 Stmicroelectronics (Grenoble 2) Sas Dispositif comportant un capteur d'image 2d et un capteur de profondeur
JP6961392B2 (ja) * 2017-05-24 2021-11-05 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
US11236993B1 (en) * 2017-06-08 2022-02-01 Facebook Technologies, Llc Depth sensing using a time of flight system including a scanning beam in combination with a single photon avalanche diode array
EP3646057A1 (en) 2017-06-29 2020-05-06 Apple Inc. Time-of-flight depth mapping with parallax compensation
EP3442032B1 (en) * 2017-08-10 2020-04-01 ams AG Single photon avalanche diode and array of single photon avalanche diodes
US10955552B2 (en) 2017-09-27 2021-03-23 Apple Inc. Waveform design for a LiDAR system with closely-spaced pulses
CN110462425B (zh) * 2017-09-29 2020-12-18 索尼半导体解决方案公司 时间测量器件和时间测量单元
DE102017222972A1 (de) * 2017-12-15 2019-07-04 Ibeo Automotive Systems GmbH Empfangsanordnung zum Empfang von Lichtsignalen
DE102017222974A1 (de) * 2017-12-15 2019-06-19 Ibeo Automotive Systems GmbH Anordnung und Verfahren zur Ermittlung einer Entfernung wenigstens eines Objekts mit Lichtsignalen
WO2019125349A1 (en) 2017-12-18 2019-06-27 Montrose Laboratories Llc Time-of-flight sensing using an addressable array of emitters
JP7039310B2 (ja) * 2018-02-09 2022-03-22 キヤノン株式会社 光電変換装置及び撮像システム
US11221400B2 (en) * 2018-03-27 2022-01-11 Omnivision Technologies, Inc. Dual mode stacked photomultipliers suitable for use in long range time of flight applications
DE102018205378A1 (de) 2018-04-10 2019-10-10 Ibeo Automotive Systems GmbH Verfahren zur Ansteuerung von Sensorelementen eines LIDAR Messsystems
EP3591712A1 (en) * 2018-07-05 2020-01-08 STMicroelectronics (Research & Development) Limited Optical sensor and method of operating an optical sensor
JP2020034523A (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距システム
JP2020034521A (ja) * 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距システム
JP2020048019A (ja) 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距システム
WO2020167338A1 (en) * 2019-02-11 2020-08-20 Apple Inc. Depth sensing using a sparse array of pulsed beams
JP6949067B2 (ja) * 2019-03-05 2021-10-13 キヤノン株式会社 撮像素子及びその制御方法、撮像装置、及び、画像処理装置
US11500094B2 (en) 2019-06-10 2022-11-15 Apple Inc. Selection of pulse repetition intervals for sensing time of flight
JP7079753B2 (ja) 2019-06-11 2022-06-02 株式会社東芝 光検出装置、電子装置及び光検出方法
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US11555900B1 (en) 2019-07-17 2023-01-17 Apple Inc. LiDAR system with enhanced area coverage
WO2021038749A1 (ja) * 2019-08-28 2021-03-04 株式会社ソニー・インタラクティブエンタテインメント センサシステム、画像処理装置、画像処理方法およびプログラム
WO2021038751A1 (ja) 2019-08-28 2021-03-04 株式会社ソニー・インタラクティブエンタテインメント センサシステム、画像処理装置、画像処理方法およびプログラム
JP7133523B2 (ja) 2019-09-05 2022-09-08 株式会社東芝 光検出装置及び電子装置
US11525904B2 (en) 2019-10-23 2022-12-13 Stmicroelectronics (Research & Development) Limited Dynamic latch based SPAD front end
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KR20210087349A (ko) 2020-01-02 2021-07-12 삼성전자주식회사 라이다 장치 및 그 동작 방법
ES2849224B2 (es) * 2020-02-14 2022-01-21 Consejo Superior Investigacion Fotomultiplicador digital de combinacion or de pulsos
JP7476033B2 (ja) 2020-08-24 2024-04-30 株式会社東芝 受光装置及び電子装置
GB202013584D0 (en) 2020-08-28 2020-10-14 Ams Int Ag Dynamic range extension of spad-based devices
US12442926B2 (en) 2021-02-04 2025-10-14 Apple Inc. Time-of-flight depth sensing with improved linearity
US12196860B2 (en) 2021-03-02 2025-01-14 Apple Inc. Depth sensor calibration using internal reflections
US11681028B2 (en) 2021-07-18 2023-06-20 Apple Inc. Close-range measurement of time of flight using parallax shift
CN114285486B (zh) * 2021-11-24 2023-04-07 中国人民解放军战略支援部队信息工程大学 基于外部门控的spad阵列协同的高速接收方法
WO2023202808A1 (en) * 2022-04-22 2023-10-26 Ams-Osram Ag Method and device for controlling sensitivity of a spad macro-cell
TWI822527B (zh) * 2022-05-30 2023-11-11 神盾股份有限公司 感測像素電路、影像感測器和電子裝置
JP2023183169A (ja) * 2022-06-15 2023-12-27 ソニーセミコンダクタソリューションズ株式会社 光検出素子
CN115468664A (zh) * 2022-10-27 2022-12-13 深圳市灵明光子科技有限公司 一种调整pde的方法及相关设备
CN115828799A (zh) * 2022-11-18 2023-03-21 深圳市灵明光子科技有限公司 一种Ref SPAD矩阵的开启方法及相关设备
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US20060202129A1 (en) * 2005-02-14 2006-09-14 Cristiano Niclass Integrated circuit comprising an array of single photon avalanche diodes
US8610043B2 (en) * 2010-11-30 2013-12-17 Stmicroelectronics (Research & Development) Limited Proximity sensor having an array of single photon avalanche diodes and circuitry for switching off illumination source and associated method, computer readable medium and firmware
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Also Published As

Publication number Publication date
US20160284743A1 (en) 2016-09-29
US20180026058A1 (en) 2018-01-25
US9786701B2 (en) 2017-10-10
US10304877B2 (en) 2019-05-28

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