FR3033076B1 - Memoire non volatile ayant un decodeur de ligne a polarite variable - Google Patents

Memoire non volatile ayant un decodeur de ligne a polarite variable

Info

Publication number
FR3033076B1
FR3033076B1 FR1551530A FR1551530A FR3033076B1 FR 3033076 B1 FR3033076 B1 FR 3033076B1 FR 1551530 A FR1551530 A FR 1551530A FR 1551530 A FR1551530 A FR 1551530A FR 3033076 B1 FR3033076 B1 FR 3033076B1
Authority
FR
France
Prior art keywords
volatile memory
line decoder
variable polarity
polarity line
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1551530A
Other languages
English (en)
Other versions
FR3033076A1 (fr
Inventor
Rosa Francesco La
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1551530A priority Critical patent/FR3033076B1/fr
Priority to US14/964,196 priority patent/US9543018B2/en
Publication of FR3033076A1 publication Critical patent/FR3033076A1/fr
Priority to US15/365,367 priority patent/US9941010B2/en
Application granted granted Critical
Publication of FR3033076B1 publication Critical patent/FR3033076B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

L'invention concerne une mémoire (M1) comprenant un plan mémoire (MA1) comprenant au moins deux rangées de cellules mémoire, un premier circuit pilote (DO) relié à une ligne de contrôle de la première rangée de cellules mémoire, et un deuxième circuit pilote (D1) relié à une ligne de contrôle de la deuxième rangée de cellules mémoire. Selon l'invention, le premier circuit pilote (DO) est réalisé dans un premier caisson (DWO), le deuxième circuit pilote est réalisé dans un deuxième caisson (DW1) isolé électriquement du premier caisson, et les deux rangées de cellules mémoire sont réalisées dans un caisson de plan mémoire (MW, PMW) isolé électriquement des premier et deuxième caissons.
FR1551530A 2015-02-23 2015-02-23 Memoire non volatile ayant un decodeur de ligne a polarite variable Expired - Fee Related FR3033076B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1551530A FR3033076B1 (fr) 2015-02-23 2015-02-23 Memoire non volatile ayant un decodeur de ligne a polarite variable
US14/964,196 US9543018B2 (en) 2015-02-23 2015-12-09 Non-volatile memory with a variable polarity line decoder
US15/365,367 US9941010B2 (en) 2015-02-23 2016-11-30 Non-volatile memory with a variable polarity line decoder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1551530A FR3033076B1 (fr) 2015-02-23 2015-02-23 Memoire non volatile ayant un decodeur de ligne a polarite variable

Publications (2)

Publication Number Publication Date
FR3033076A1 FR3033076A1 (fr) 2016-08-26
FR3033076B1 true FR3033076B1 (fr) 2017-12-22

Family

ID=54014904

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1551530A Expired - Fee Related FR3033076B1 (fr) 2015-02-23 2015-02-23 Memoire non volatile ayant un decodeur de ligne a polarite variable

Country Status (2)

Country Link
US (2) US9543018B2 (fr)
FR (1) FR3033076B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10216570B2 (en) * 2017-01-31 2019-02-26 Winbond Electronics Corporation Memory device and control method thereof
US11190810B2 (en) 2018-01-26 2021-11-30 Samsung Electronics Co., Ltd. Device and method for compressing image data using quantization parameter and entropy tables

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199882B2 (ja) * 1993-01-13 2001-08-20 株式会社東芝 不揮発性半導体記憶装置
JP4111486B2 (ja) * 2002-01-31 2008-07-02 シャープ株式会社 半導体記憶装置および電子情報機器
EP1339069B1 (fr) * 2002-02-20 2004-07-07 STMicroelectronics S.r.l. Wortleitungselektor für einen Halbleiterspeicher
FR2850201A1 (fr) * 2003-01-21 2004-07-23 St Microelectronics Sa Decodeur de ligne de mot a tension negative, ayant des elements de terminaison de faible encombrement
JP4437710B2 (ja) * 2003-10-30 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ
KR101596826B1 (ko) * 2009-10-26 2016-02-23 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 바이어스 전압 인가 방법
US8750049B2 (en) * 2010-06-02 2014-06-10 Stmicroelectronics International N.V. Word line driver for memory

Also Published As

Publication number Publication date
FR3033076A1 (fr) 2016-08-26
US20170084336A1 (en) 2017-03-23
US20160247572A1 (en) 2016-08-25
US9543018B2 (en) 2017-01-10
US9941010B2 (en) 2018-04-10

Similar Documents

Publication Publication Date Title
CL2023000294A1 (es) Expresión selectiva de un transgene de tejidos
EP3971988A3 (fr) Matrice de mémoire non volatile de terre virtuelle
WO2016161169A3 (fr) Incubateurs de culture cellulaire avec des systèmes de manipulation de cellule intégrée
EP2894676A3 (fr) Réseau de cellules solaires ayant deux types différents de cellules
FR3033076B1 (fr) Memoire non volatile ayant un decodeur de ligne a polarite variable
EP3496104A3 (fr) Bloc par des opérations de pont pour mémoire nand
WO2017203110A8 (fr) Électrode quadripolaire implantable de neurostimulation multi-sequentielle du nerf phrenique
US20150241902A1 (en) Integrated Circuit With Transistor Array And Layout Method Thereof
MY177593A (en) Signal conversion
EA202090635A1 (ru) Кролики с нокаутом гена фактора viii или фактора ix, способы их получения и их применение
RU2016101771A (ru) Мажоритарный элемент "5 и более из 9"
Wang et al. Capital cost-aware design and partial shading-aware architecture optimization of a reconfigurable photovoltaic system
EA202192492A1 (ru) Инструмент вмешательства для эксплуатации электролизера
WO2008115850A3 (fr) Génération de circuits neuronaux simulés
FR3066310B1 (fr) Cellule memoire de type ram resistive
FR3087947B1 (fr) Generateur electrochimique au lithium du type lithium-oxygene ou lithium-air comprenant un materiau d'electrode negative specifique
WO2013167564A3 (fr) Module photovoltaïque et procede de realisation d'un tel module
WO2021174232A3 (fr) Fusion et soustraction d'ensembles de contraintes
WO2019173159A8 (fr) Compositions d'ergothionéine et méthodes pour maintenir et/ou augmenter le niveau de vitamine c dans des cellules et des organismes
Bell Response to Holm‐Hadulla
CN203700942U (zh) 三角形桥墩结构
Singh Tulsi
FR3075446B1 (fr) Circuit memoire adapte a mettre en oeuvre des operations de calcul
WO2017120479A8 (fr) Thérapeutique pour maladies immuno-inflammatoires oculaires
Hwang et al. Information Behavior and Deficiency of International Student

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20160826

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20211005