FR3028668A1 - Procede de fabrication d'une cellule photovoltaique - Google Patents
Procede de fabrication d'une cellule photovoltaique Download PDFInfo
- Publication number
- FR3028668A1 FR3028668A1 FR1460925A FR1460925A FR3028668A1 FR 3028668 A1 FR3028668 A1 FR 3028668A1 FR 1460925 A FR1460925 A FR 1460925A FR 1460925 A FR1460925 A FR 1460925A FR 3028668 A1 FR3028668 A1 FR 3028668A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- holes
- pattern
- front face
- cigs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000002659 electrodeposit Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 4
- 238000010329 laser etching Methods 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 238000007654 immersion Methods 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 238000009713 electroplating Methods 0.000 description 7
- 238000004070 electrodeposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (11)
- REVENDICATIONS1. Procédé de fabrication d'une cellule photovoltaïque sur un substrat (1) comportant une face avant (2) et une face arrière (3), le procédé comportant les étapes suivantes : (a) réalisation de trous (4) à travers le substrat (1), chaque trou (4) présentant une extrémité avant (5) débouchant sur la face avant (2) du substrat (1) et une extrémité arrière (6) débouchant sur la face arrière (3) du substrat (1); (b) remplissage des trous (4) par un matériau conducteur électriquement ; (c) formation d'un motif métallique (7) sur la face avant (2) du substrat ; (d) connexion d'au moins une partie des extrémités arrières (6) des trous (4a) à une alimentation électrique (9) ; (e) immersion de la face avant (2) du substrat (1) dans au moins un premier bain d'électrolyse de façon à former par électrodépôt un motif en CIGS (10) sur le motif métallique (7).
- 2. Procédé selon la revendication 1, dans lequel les étapes (a) et (b) sont réalisées avant l'étape (c).
- 3. Procédé selon la revendication 1, dans lequel l'étape (c) est réalisée avant les étapes (a) et (b).
- 4. Procédé selon l'une des revendications 1 à 3, dans lequel les trous (4) sont réalisés par gravure laser.
- 5. Procédé selon l'une des revendications 1 à 3, dans lequel les trous (4) sont réalisés par gravure chimique.
- 6. Procédé selon l'une des revendications précédentes, dans lequel les trous présentent un diamètre compris entre 5 pm et 500 pm. 3028668 12
- 7. Procédé selon l'une des revendications précédentes, dans lequel la distance entre deux trous consécutifs est comprise entre 5 mm et 20 mm.
- 8. Procédé selon l'une des revendications précédentes, dans lequel l'étape de 5 formation du motif métallique (7) comporte les étapes suivantes : - dépôt d'une couche métallique sur la face avant du substrat ; - gravure de la couche métallique de façon à former le motif métallique.
- 9. Procédé selon l'une des revendications précédentes, dans lequel, lors de 10 l'étape (e), une couche est formée en immergeant la face avant (2) du substrat successivement dans : - un bain de cuivre ; - un bain d'indium ; - un bain de gallium. 15
- 10. Procédé selon la revendication précédente, dans lequel, lors de l'étape (e), la couche formée est recuite sous atmosphère soufre et/ou sous atmosphère sélénium 20
- 11. Procédé selon l'une des revendications précédentes, comportant en outre une étape de dépôt d'une couche en oxyde conducteur transparent (11) sur le motif en CIGS (10). 25
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1460925A FR3028668B1 (fr) | 2014-11-13 | 2014-11-13 | Procede de fabrication d'une cellule photovoltaique |
PCT/EP2015/076435 WO2016075236A1 (fr) | 2014-11-13 | 2015-11-12 | Procédé de fabrication d'une cellule photovoltaique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1460925A FR3028668B1 (fr) | 2014-11-13 | 2014-11-13 | Procede de fabrication d'une cellule photovoltaique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3028668A1 true FR3028668A1 (fr) | 2016-05-20 |
FR3028668B1 FR3028668B1 (fr) | 2016-12-30 |
Family
ID=52130489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1460925A Active FR3028668B1 (fr) | 2014-11-13 | 2014-11-13 | Procede de fabrication d'une cellule photovoltaique |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR3028668B1 (fr) |
WO (1) | WO2016075236A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090065060A1 (en) * | 2005-05-24 | 2009-03-12 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
EP2469580A1 (fr) * | 2010-12-27 | 2012-06-27 | Nexcis | Interface améliorée entre une couche de matériau I-III-VI2 et un substrat de molybdène |
WO2013013226A1 (fr) * | 2011-07-20 | 2013-01-24 | Nanosolar, Inc. | Structures pour toiture solaire |
US20130112564A1 (en) * | 2008-05-15 | 2013-05-09 | Solopower, Inc. | Electroplating Solutions and Methods For Deposition of Group IIIA-VIA Films |
WO2013122067A1 (fr) * | 2012-02-17 | 2013-08-22 | 富士電機株式会社 | Elément de conversion photoélectrique |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1452463A (fr) | 1965-10-29 | 1966-02-25 | Tsnii Morskogo Flota | Procédé de réalisation d'échangeurs thermiques à surface tubulaire et à ailettes |
-
2014
- 2014-11-13 FR FR1460925A patent/FR3028668B1/fr active Active
-
2015
- 2015-11-12 WO PCT/EP2015/076435 patent/WO2016075236A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090065060A1 (en) * | 2005-05-24 | 2009-03-12 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
US20130112564A1 (en) * | 2008-05-15 | 2013-05-09 | Solopower, Inc. | Electroplating Solutions and Methods For Deposition of Group IIIA-VIA Films |
EP2469580A1 (fr) * | 2010-12-27 | 2012-06-27 | Nexcis | Interface améliorée entre une couche de matériau I-III-VI2 et un substrat de molybdène |
WO2013013226A1 (fr) * | 2011-07-20 | 2013-01-24 | Nanosolar, Inc. | Structures pour toiture solaire |
WO2013122067A1 (fr) * | 2012-02-17 | 2013-08-22 | 富士電機株式会社 | Elément de conversion photoélectrique |
Also Published As
Publication number | Publication date |
---|---|
WO2016075236A1 (fr) | 2016-05-19 |
FR3028668B1 (fr) | 2016-12-30 |
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